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VP 1176 Abstract: HMF-06100-200 HMF06100-200 Contextual Info: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	d011a71 f-06140 hmf-06140-200 hmf06100-200 +2vp 1176 hmf-06100-200	PDF

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VP 1176

Abstract: HMF-06100-200 HMF06100-200
Contextual Info: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

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d011a71 f-06140 hmf-06140-200 hmf06100-200 +2

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