D001T Search Results

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

E2023

Abstract: E2025 E-2012 E2023 epoxy E-2011
Contextual Info: ro u t m m SUBMINIATURE/LIGHT DUTY/PANEL MOUNTABLE DISTINCTIVE FEATURES 3 amp rating for A C makes E Series devices suited to light duty applications. The high torque bushing prevents the bushing from rotating or separating from the metal frame during installation.

Contextual Info: f e j Preliminary bq2007 BENCHMARQ Fast Charge 1C Features >• F ast charging and conditioning of NiCd and NiMH batteries - Charges multi-cell battery packs - Discharge-before-charge on demand - Pulse trickle charge conditioning - Battery undervoltage and

Contextual Info: Data Sheet November 1993 là AT&T Microelectronics FE050H, FE100H, FE150H Power Modules: dc-dc Converters; 48 Vdc Input, 24 Vdc Output, 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 0.5 in.

atmel at89c52 architecture

Abstract: AT89C52 INSTRUCTION SET AT89C51 PLCC 44 pin atmel 89c52 ir circuit at89c52 atmel at89c52 atmel 89c52 port pin atmel 89c52 instruction set at89c52 full instruction set programming 89C52
Contextual Info: AT89C52 Features • • • • • • • • • • Compatible with MCS-51 Products 8 Kbytes of In-System Reprogrammable Flash Memory Endurance: 1,000 Write/Erase Cycles Fully Static Operation: 0 Hz to 24 MHz Three-Level Program Memory Lock 256 x 8-Bit Internal RAM

l24c

Abstract: XL24C04-3 24C04-3
Contextual Info: ROHM CORP/ EXEL MELECS i f d bbE D • 702^014 OOGlLOa bTl MICROELECTRONICS XL24C04-3 E x tx lb n c e in & Preliminary 4,096-Bit Serial Electrically Erasable PROM 3 to 5 Volt Operation F EA TU R ES ■ ■ PIN C O N F IG U R A TIO N S Low P o w er C M O S