D-636 TRANSISTOR Search Results
D-636 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
|
BLA1011-300 - 300W LDMOS Avionics Power Transistor |
|
||
| 54F151LM/B |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
|
||
| 93L422ADM/B |
|
93L422A - 256 x 4 TTL SRAM |
|
||
| 93425ADM/B |
|
93425 - 1K X 1 TTL SRAM |
|
||
| 27S185DM/B |
|
27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
|
D-636 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BC638
Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
|
Original |
BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola | |
|
Contextual Info: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. |
Original |
BC635/636 StyleTO-92 | |
ST2S05
Abstract: st2506
|
OCR Scan |
CNY36 27nim ST2S05 ST2506 ST2S05 st2506 | |
transistor C 639 W
Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
|
OCR Scan |
150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639 | |
BC640
Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
|
OCR Scan |
635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143 | |
TRANSISTOR 636
Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
|
OCR Scan |
150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639 | |
bc 640
Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
|
Original |
Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636 | |
222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
|
Original |
BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module | |
transistor Bc 540
Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
|
OCR Scan |
BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635 | |
BC639
Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
|
OCR Scan |
636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138 | |
|
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation |
OCR Scan |
2SC5011 | |
transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
|
OCR Scan |
2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P | |
bc 540
Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
|
OCR Scan |
BCW90 CB-76 bc 540 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635 | |
GE-MOV
Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
|
OCR Scan |
||
|
|
|||
B0415
Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
|
OCR Scan |
BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 | |
|
Contextual Info: y i/iy jx iy n Preset/Adjustable Output CMOS Inverting Switching Regulators G eneral Description The MAX635/MAX636/MAX637 inverting switching regu lators are designed for minimum component DC-DC conversion in the 5mW to 500mW range. Low power applications require only a diode, output filter |
OCR Scan |
AX635/636/637 MAX635/MAX636/MAX637 500mW MAX635/636/637to | |
siemens toroidal core
Abstract: T0451S100A 1mh inductor 1mh inductor design Siemens Ferrite B64290 MAX635 MAX635XCPA MAX635XCSA MAX635XEPA MAX636
|
OCR Scan |
MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF siemens toroidal core T0451S100A 1mh inductor 1mh inductor design Siemens Ferrite B64290 MAX635 MAX635XCPA MAX635XCSA MAX635XEPA MAX636 | |
57-3215
Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent
|
OCR Scan |
MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF 57-3215 MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent | |
siemens toroidal core
Abstract: b0735 b0348 IN5817 diode driver circuit for MOSFET MAX626 MAX635XCPA MAX635XCSA MAX635XEJA B0885 MAX635XMJA
|
OCR Scan |
MAX635/MAX636/MAX637 500mW MAX635/636/637 logic-level19 MS012 102mm MS012-XX siemens toroidal core b0735 b0348 IN5817 diode driver circuit for MOSFET MAX626 MAX635XCPA MAX635XCSA MAX635XEJA B0885 MAX635XMJA | |
QUALCOMM
Abstract: NOKIA ULTRA halbleiter mobile nokia D-81617
|
Original |
D-80312 D-81617 QUALCOMM NOKIA ULTRA halbleiter mobile nokia | |
vegaswing 83
Abstract: PTB-NR vegator PTB Ex-92.C.2141 E80T 83g1 e80t2 EX 571 ptb ex-89 vegaswing 82
|
Original |
D-77761 vegaswing 83 PTB-NR vegator PTB Ex-92.C.2141 E80T 83g1 e80t2 EX 571 ptb ex-89 vegaswing 82 | |
pnp DARLINGTON TRANSISTOR ARRAY
Abstract: pnp darlington array D75FY4D
|
OCR Scan |
D75FY4D pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array D75FY4D | |
mpsa13 636Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA |
OCR Scan |
bh53T31 QQ26Q13 MPSA13 MPSA14 100pA mpsa13 636 | |
TN0201LContextual Info: H IS S A TN0201L, TN0401L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BR|DSS PART NUMBER ro? c BOTTOM VIEW fD (A) TN0201L 20 1.2 0.64 TN0401L 40 1.2 0.64 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ03 u 3 ,i— 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) |
OCR Scan |
TN0201L, TN0401L O-226AA) TN0201L VNDQ03 100-C | |