D-636 TRANSISTOR Search Results

BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

Contextual Info: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

ST2S05

Abstract: st2506
Contextual Info: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 *J L l O r D | \ 0 b| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS*. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00

transistor C 639 W

Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Contextual Info: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A

BC640

Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
Contextual Info: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.

TRANSISTOR 636

Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
Contextual Info: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation

bc 640

Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
Contextual Info: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365

222259116641

Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4

transistor Bc 540

Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

BC639

Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
Contextual Info: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

bc 540

Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
Contextual Info: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500

GE-MOV

Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
Contextual Info: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

Contextual Info: y i/iy jx iy n Preset/Adjustable Output CMOS Inverting Switching Regulators G eneral Description The MAX635/MAX636/MAX637 inverting switching regu­ lators are designed for minimum component DC-DC conversion in the 5mW to 500mW range. Low power applications require only a diode, output filter

siemens toroidal core

Abstract: T0451S100A 1mh inductor 1mh inductor design Siemens Ferrite B64290 MAX635 MAX635XCPA MAX635XCSA MAX635XEPA MAX636
Contextual Info: w iy jx iy i/i 19-0918; Rev 0; 5/91 P reset/A djustable O utput CMOS In vertin g S w itching R egulators General Description Features ♦ Preset -5V, -12V, -15V Output Voltages The MAX635/MAX636/MAX637 inverting switching regu­ lators are designed for minimum component DC-DC

57-3215

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent
Contextual Info: 19-0918; Rev 0; 5/91 y i/ iy jx iy i/ i P reset/A djustable O utput CMOS in vertin g S w itch ing R egulators _ F e a tu re s ♦ Preset -5V, -12V, -15V Output Voltages Low power applications require only a diode, output filter capacitor, and a low-cost inductor. An additional

siemens toroidal core

Abstract: b0735 b0348 IN5817 diode driver circuit for MOSFET MAX626 MAX635XCPA MAX635XCSA MAX635XEJA B0885 MAX635XMJA
Contextual Info: 19-0918; Rev 0; 5/91 y i/ iy jx iy i/ i P reset/A djustable O utput CMOS in vertin g S w itch ing R egulators _ F e a tu re s ♦ Preset -5V, -12V, -15V Output Voltages Low power applications require only a diode, output filter capacitor, and a low-cost inductor. An additional

QUALCOMM

Abstract: NOKIA ULTRA halbleiter mobile nokia D-81617
Contextual Info: Halbleiter HL Für die Fachpresse München, 5. November 1997 Mit MultiMediaCard zum neuen Standard für wechselbare Halbleiter-Speicherkarten Unterstützung durch Ericsson, Nokia, Motorola, Qualcomm und Siemens PN Siemens Halbleiter und SanDisk gaben heute die gemeinsame Vermarktung der MultiMediaCard

vegaswing 83

Abstract: PTB-NR vegator PTB Ex-92.C.2141 E80T 83g1 e80t2 EX 571 ptb ex-89 vegaswing 82
Contextual Info: Füllstand- und Druckmeßtechnik Betriebsanleitung VEGASWING 81 … 83 und Auswertgeräte Inhaltsverzeichnis Inhaltsverzeichnis Sicherheitshinweise . 2 1 Produktbeschreibung 1.1 Funktion und Aufbau . 3

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp darlington array D75FY4D
Contextual Info: D75FY4D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -4 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

TN0201L

Contextual Info: H IS S A TN0201L, TN0401L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BR|DSS PART NUMBER ro? c BOTTOM VIEW fD (A) TN0201L 20 1.2 0.64 TN0401L 40 1.2 0.64 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ03 u 3 ,i— 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)