D-35 408 Search Results

PL686-35

Contextual Info: Preliminary PL686-35 Low Phase Noise, LVPECL XO (for 120M Hz to 170M Hz 3 r d Overtone Crystals) •    DESCRIPTION 0.952mm 6 5 7 XIN Q 4 XOUT The PL686-35 is a non-multiplier XO IC specifically designed for 3 rd overtone crystals from 120MHz to

1117 transistor 0340 180

Abstract: M13Q floorplan io uart vhdl MSM13Q
Contextual Info: MSM13/14Q 35µm DS 9…9/14Backup Page -1 Friday, November 21, 1997 11.17 a DATA SHEET O K I A S I C P R O D U C T S MSM13Q0000/14Q0000 0.35 µm Sea of Gates Arrays November 1997 MSM13/14Q 35µm DS 9…9/14Backup Page 0 Friday, November 21, 1997 11.17 a MSM13/14Q 35µm DS 9…9/14Backup Page 1 Friday, November 21, 1997 11.17 a

Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max

Contextual Info: DG9461 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 40 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max

Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier DSS 16 iFAV V RRM = 16 A = 35 - 45 V mm TO-220 AC TO-263 SMD S-Type V RSM V V 35 45 Symbol Test Conditions Maximum Ratings (per diode) rms Tc = 130°C; rectangular, d = 0.5 UsM tp = 10 ms Eas Ias = 1 5 A ; L = 1 8 0 h H ; T vj = 25°C ; non repetitive

Contextual Info: TN0205A/AD New Product Vishay Siliconix N-Channel 20-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 FEATURES D D D D Low On-Resistance: 2.0 Ω Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation

Contextual Info: M O SEL V IT E L IC V53C8258H HIGH PERFORMANCE 2 5 6 K X 8 E D 0 PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRREMMBBM 35 40 45 50 Max. RAS Access Time, îr a c 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Page M ode Cycle Time, (tPC)

bsh1

Contextual Info: F E D C B A 5 : 1 A D D 0,8 12,6 +- 0,33 0,43 C D B 8 +- 0,02 0,23 n4 JACKSCREW LANYARD ROTATES FREELY 16,4 +- 0,1 C C M3 4-40 UNC NOTE 9 10 8` 6, 35 No. of pos. WIRE ROPE n1,0 B 2x TERMINAL RING R n 5 2, 2 3, A -0,76 B -0,25 C D -0,3 +0,12 -0,10 6,12 9

160-002-80

Contextual Info: F E D C B A 5 : 1 A D D 0,9 12,6 +- 0,33 0,43 C D B 8,26 +- 0,22 0,03 n4 JACKSCREW LANYARD ROTATES FREELY 16,4 +- 0,1 C C M3 4-40 UNC SEE NOTE 9 10 8 ` 6, 35 No. of pos. n 3, 2 WIRE ROPE n1,0 B 2x TERMINAL RING n A -0,76 B +0,25 C D -0,3 +0,12 -0,10 6,12

Contextual Info: HITACHI/ LOGIC/ARRAYS/flEN TE D Ë | 44E L,S03 0010t,35 S | “ 92D HD74HC4543 10632 D TSH7 1BCD-to-Seven Segment L a tc h /D e c o d e r/D riv e r This circuit contains a 4 -b it latch, BCD-to-7 segment decoder, PIN ARRANGEMENT and 7 o u tput drivers. Data on the input pins flo w through to

Contextual Info: E G & G/HEIMANN OPTOELE b5E D T003320 0000033 bM5 HEIMANN TPS 408 Thermopile Sensors Thermoelement Sensoren 0,3 unit Einheit mm2 condition Bedingung - typ. 100 V/W typ. 100 uV/VHZ 6.14 pm 1 Hz, 100 °C 25 °C, pk pk typ. 35 kQ 25 °C W/VHZ type Sensitive Flache

Contextual Info: MO SEL V I T E L I C V53C808L H IG H P ER FO R M A NC E 3.3 VOLT 1M x 8 ED O PA G E M O D E CM OS DYNAM IC R A M HIGH PERFORMANCE PR ELIM INA R Y 35 40 45 50 Max. RAS Access Time, tp^c 35 ns 40 ns 45 ns 50 ns Max. Colum n Address Access Time, (tQ ^ ) 18 ns

Contextual Info: B C E LE R STE K CMM2311 A d v a n ce d Product Information M ay 1998 1 of 2 800 to 2700 MHz 3.0V Wideband Driver Features □ +15.5 dBm Output Power @ 3.0V □ 800 - 2700 MHz Operation □ 35 dB Gain Control Range □ Variable Current: 5-75 mA, Typical

2n5277

Abstract: TN5277
Contextual Info: TELEDYNE COMPONENTS HûE D • âT17bü5 QGQb54û 7 ■ - T -'35-S>5' 2N5277 2N5278 TN5277 TN5278 HIGH VOLTAGE N CHANNEL JFET GEOMETRY 1143 T O -39 Package • High BVDGO 300V - Selections to 400V. • High Transconductance - to ómmho

TRANSPONDER AUTOMOTIVES

Abstract: pc star ups SERVICE MANUAL capacitive sensing PIC16f877
Contextual Info: PIC16C745/765 8-Bit CMOS Microcontrollers with USB Devices included in this data sheet: • PIC16C765 28-Pin DIP, SOIC Microcontroller Core Features: • High-performance RISC CPU • Only 35 single word instructions Memory Program x14 Data x8 Pins A/D Resolution

Weller Electronics

Abstract: 14-0CT-02
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. “ f “ ALL RIGHT5 RESERVED. D .35 JL B S - 1601112-< TERMINALS TO UNWIND FROM REELS AS SHDVNt BARB OFFSET & STEPPEB SURFACE FACING CORE BARB OFFSET

16c745

Abstract: 24cxx usb programmer PIC16F877 and Parallel port interfacing circuit PIC16F877 APPLICATIONS PID CONTROL DC MOTOR 16c765 BA5 marking Transponder ID 48 24cxx programmer circuit and software Aps 92 intel embedded microcontroller handbook
Contextual Info: PIC16C745/765 8-Bit CMOS Microcontrollers with USB Devices included in this data sheet: • PIC16C765 28-Pin DIP, SOIC Microcontroller Core Features: • High-performance RISC CPU • Only 35 single word instructions Memory Program x14 Data x8 Pins A/D Resolution

pic16c73b-04/sp

Abstract: PIC16C74 Free Projects i2c SSOP 56 socket 24cxx eeprom programmer circuits 24cxx programmer circuit and software EPSON CA-301 20.000M-C intel embedded microcontroller handbook panasonic ceramic resonator PIC16CXX DS33023
Contextual Info: PIC16C63A/65B/73B/74B 8-Bit CMOS Microcontrollers with A/D Converter • PIC16C63A • PIC16C73B • PIC16C65B • PIC16C74B PIC16CXX Microcontroller Core Features: • High performance RISC CPU • Only 35 single word instructions to learn • All single cycle instructions except for program

PALC18U8Q

Abstract: CAN I REPLACE PAL 007 E WITH PAL 007 B PALC18U8Q25 PALC18U8 PAL 007 diagrams
Contextual Info: ADV MICRO P L A / P L E / ARRAYS 13E D | 055752k 0020005.7 | PALC18U8Q-25 PALC18U8Q-35 CMOS Universal Programmable Array Logic U.S. Patents 4124899 and 4717912 a "ö > 00 DISTINCTIVE CHARACTERISTICS CMOS technology provides quarter power only 55 mA while matching bipolar speeds

SY 3803 12A

Abstract: dw02a
Contextual Info: i t IDT H IG H - S P E E D C T A T ir ^ d a u ^ L * P O R T S T A T IC R A M Featu res: * True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access - * industrial: 35ns max. Commercial: 15/2Q/25/35/55ns (max.)

Contextual Info: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 3 2Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

CMM1335

Abstract: CMM1335-AK-00S0 CMM1335-AK-00ST CMM1335-AK-00T0 CMM1335-AK-00TT DCS-1800 IS-136
Contextual Info: « i » m ir CMM1335 A d v an c e d P ro d u c t In fo rm a tio n Decem ber 1 997 1 of 2 1.85 to 1.91 GHz 5.8V, 32 dBm, PCS/PCN, Power Amplifier Features □ 35% Linear Power Added Efficiency □ 32 dBm O utput Power (IS-136 TDMA) □ 32 dB Gain □ Low Cost, SO-8 Surface M ount Package

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation

Contextual Info: FAST CMOS 8-BIT IDENTITY COMPARATOR IDT54/74FCT521/A/B/C D E S C R IP TIO N : FE A T U R E S : - IDT54/74FCT521 equivalent to FAST speed “ IDT54/74FCT521A 35% faster than FAST - IDT54/74FCT521B 50% faster than FAST “ IDT54/74FCT521C 60% faster than FAST