D 1803 TRANSISTOR Search Results

PC9203

Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Contextual Info: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439

bta 05

Abstract: BTA05
Contextual Info: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05

2sb1237

Abstract: 2sb909m 2SD1225
Contextual Info: 2SB909M/2SB1237 h -7 > V 7 , $ / I ransistors 2SB909M 2SB1237 i b : £ * 7 ' > 7 0U /U - : i- J F 2 P N P '> > ; = ! > h 7 > v ^ ^ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors • W f i^ ä lS I/D im e n s io n s U nit : mm h -7 > V 1 ) P c = 1 W t * # i'0

component data

Abstract: smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards
Contextual Info: VT-WIN PRINTED CIRCUIT BOARD INSPECTION SYSTEM Fully Automated And Integrated High-Speed, In-Line PCB Inspection and Verification System The increasing density and quality requirements of PCBs and intense manufacturing competition leave little room for error.To stay ahead of competition, maximize your resources

2SC2021

Contextual Info: h ~ 7 > y X £ /T ran sisto rs 2SC2021 2SC4038 2SC2021 /2SC4038 H K 'M W M W B / G e n e r a l Small Signal Amp. Epitaxial Planar NPN Silicon Transistors i ÿJ.Jg Tj-^ @ /D im en sio n s Unit : mm • 1) V ce (satj^O.CMV (at 10mA) £•(S .l,'0 2) C o b = 2 .0 p F t ^ 'o

D1226M

Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1
Contextual Info: h - 7 > p ' Z £ /Transistors ROHM CO 2SD1226M/2SD1859 LT» MQE D • 7 ö 2 ß ci*:J c] 0 D G S 0 3 Ö 3 H R HM 2SD1226M Xt°^df-vT;U70U-^NPN yU3>h7>y'X^ Power Amp. 2SD1359 Epitaxial Planar NPN Silicon Transistors 7 ^ 2 7 -2 .1 • $ Ä • W F i't'sÉ E i/D im e n sio n s Unit : mm

b0615

Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

16c72a

Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Contextual Info: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:

16c72a

Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Contextual Info: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:

AO4490

Abstract: TA10S
Contextual Info: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)

Contextual Info: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)

2SA1803

Abstract: 2SC4688
Contextual Info: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -

AOL1424

Contextual Info: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics

radiator

Abstract: RCA1C09
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575

AOL1424

Contextual Info: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD

Contextual Info: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD

rca1a10

Abstract: 2N3439 complementary BFT28B RCS88 2N5415
Contextual Info: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E

RCA1E02

Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Contextual Info: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«

service-mitteilungen

Abstract: elektronik DDR rema- radio sowjetische transistoren rema andante T8924 ddr veb servicemitteilungen Sonneberg GER-A
Contextual Info: SERVICE-MITTEILUNGEN V E B IN DUSTRIEVERTRIEB R U ND FU NK UND F E RN SE H EN I Ir a d i o -television AUSGABE: DEZEMBER t iW ir Noah bl« Sud« 1974- wird der neu« sowjetische yarbfernsehempfänger "Raduga 706" in den Handel kommen. Dieser Empfänger Belohnet siob duroh zahlreiohe Verbesserungen

BLX91A

Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Contextual Info: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

26-13 transistor sot-23

Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Contextual Info: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages

LT1803 dfn

Abstract: 1N4148 LT1803 LT1804 LT1805 LADJ DFN LTAFN LT1803CS5
Contextual Info: LT1803/LT1804/LT1805 Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Slew Rate: 100V/µs Gain Bandwidth Product: 85MHz Input Common Mode Range Includes Both Rails

Contextual Info: LT1803/LT1804/LT1805 Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Slew Rate: 100V/µs Gain Bandwidth Product: 85MHz Input Common Mode Range Includes Both Rails