D 1398 TRANSISTOR Search Results

Atmel 2FB 2

Abstract: C3246 as179-92 c313 TRANSISTOR DATA c3286 74923 ic block diagram bluetooth motorola c3101 MC72000 Transistor C3246
Contextual Info: Freescale Semiconductor, Inc. Advance Information Data Sheet MC72000/D Rev. 2.6, 1/2003 MC72000 MC72000 Integrated Bluetooth Radio Freescale Semiconductor, Inc. Package Information Plastic Package Case 1398-01 MAPBGA–100 Ordering Information Contents

D 1398 Transistor

Abstract: d 1398 BLV98 32Q1 ci 1404
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.

Atmel 2FB 2

Abstract: ETC 9668 RX 7491 shift register IC MC72000 Colpitts VCO design 74101 DCS1800 PCS1900 lm 741 using schmitt trigger c313 TRANSISTOR DATA
Contextual Info: Advance Information Data Sheet MC72000/D Rev. 2.6, 1/2003 MC72000 MC72000 Integrated Bluetooth Radio Package Information Plastic Package Case 1398-01 MAPBGA–100 Ordering Information Contents 1 MC72000 Features . . . . 2 2 System Overview . . . . . . 3

777T

Contextual Info: 2SC3483 No.1398 NPN Triple Diffused Planar Type Silicon Transistor CRT For High D e f i n i t i o n SANYO D i sp la y Ho ri zo nt al Deflection Output Applications Features: • High breakdown voltage and high reliability • H i g h s w i t c h i n g speed:

2SA748

Abstract: 2SC1398
Contextual Info: Pow er T ransistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package D im ensions M edium Pow er A m p lifie r C om plem entary Pair w ith 2SC 1398 Unit : mm 10.5 ± 0 .5 • Features s 9.8max. Ol« • Large collector pow er dissipation P c rtt-H

AX3510

Contextual Info: jy\JY X A JV \ 19-1398; Rev 1; 12/98 U p stre am CATV A m p l if ie r Features The M A X 3510 is a p ro g ra m m a b le p o w e r a m p lifie r fo r use in CATV upstream a p p lica tio n s. The d e v ic e outputs up to 6 4dB m V continuous w ave thro u g h a 2:1 (voltage

Contextual Info: CSC1398; CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16,51 10.67 4,83 0,90 1.15 1.40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12,70 14.73 6.35 2.92 2.03 31.24 7 DEG 14.42

d 1398

Abstract: 1398 CSA748 CSC1398 CSC1398A
Contextual Info: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D £ F G H J K L M N MIN 14.42 9.63 3,56 MAX 16.51 10.67 4,83 0.90 1.15 1.40

CSA748

Abstract: CSC1398 CSC1398A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

CSA748

Abstract: CSC1398 CSC1398A d 1398
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR

tca150c

Abstract: 1j99 SOLITRON
Contextual Info: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications

PC9203

Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Contextual Info: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439

2SA748

Abstract: 2SC1398 BSBE
Contextual Info: Power Transistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package Dim ensions Medium Power Am plifier Com plem entary Pair with 2SC1398 la U nit : mm 1 0 .5 ± 0 .5 • Features £ ,9 .8 m a x . «■a f»» w7 • L arg e c o lle c to r p o w e r d issip a tio n P c

D 1398 Transistor

Abstract: k 1398 Transistor
Contextual Info: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION DRAWN RELEASED BYF 1885 DATE / 02 0 3/0 6

Contextual Info: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

Contextual Info: bbS3T31 QD2S 4bO S7b « A P X N AUER PHILIPS/DISCRETE BSP30 TO 33 b?E » JV SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: REVISIONS L m ulticom p DCP # REV DESCRIPTION DRAWN DATE Effective: 7 / 8 / 0 2 * DCP No: 1398 CHECKD DATE RELEASED HO 12 2 /0 2 JWM 12 2 /0 2 DJC 12 2 /0 2 UPDATED TO ROHS COMPLIANCE EO 0 2 /0 3 /0 6 HO 2 /6 /0 6 HO 2 /6 /0 6 1262 B DOC. NO. SPC— F004

EP 1408

Abstract: 2SA745 2SA755 2SA748 2SA751 2SA752 2SA754 2SC1391
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: Philips Semiconductors Product specification T renchMOS transistor Logic level FET FEATURES PHN1011 SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type