D 10 N DIODE Search Results

Contextual Info: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE

Contextual Info: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE

36-PIN

Abstract: AES17 TAS5086 TAS5152 TAS5152DKD TAS5152DKDG4 TAS5508 TAS5518
Contextual Info: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE

SUB70N04-10

Abstract: p70n
Contextual Info: SUP/SUB70N04-10 S ilic o n ix N-Channel 40-V D-S , 175 °C MOSFET Product Summary r DS(on) ( ^ ) I d (A) 0.010 @ Vos = 10 V 70 0.014 @ VGS = 4.5 V 58 V(BR)DSS 40 d D T0-220AB Q o TO-263 < 1 DRA IN connected to TAB G D S Top View O S G D S SUB70N04-10 Top View

a2057

Abstract: TO220 RthJA 70783 SUB70N04-10 SUP70N04-10
Contextual Info: SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 70 0.014 @ VGS = 4.5 V 58 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N04-10 Top View N-Channel MOSFET

Contextual Info: Chip diodes, medium barrier C haracteristics at 25° C N /A Test C onditions TYPE EH 306 EH 316 EH 317 EH 318 EH 320 CONFIGU. C C C C C Frequency Range 10 10 10 10 10 GHz 1 -4 4 -8 6 - 12 8 -1 5 12-18 SSB N oise Figure J unction C apacitance NFssb <D dB 5.5

Si4820DY

Contextual Info: Si4820DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

AHV8501

Abstract: V-9001 V8401 V9301 V-8401 AHV-9801 AHV8401 AHV8402 AHV8403 AHV8503
Contextual Info: DE,|D55fl3SM DODOOT? D | 0 2 5 8354 A D V A N C E D S E M I C O N D U C T O R 92 D 00097 D 0 1 -/? HF Hyperabrupt Timing Varactors Features: • Medium to HF operation • Ultra high Q • 10:1 tuning ratio from 2 to 10 volts • Linear frequency performance versus voltage

ADC10061

Abstract: ADC10061CIWM ADC10062 ADC10062CIWM ADC10064 ADC1061
Contextual Info: ADC10061/ADC10062/ADC10064 10-Bit 600 ns A/D Converter with Input Multiplexer and Sample/Hold General Description Features Using an innovative, patented multistep* conversion tech- n n n n n nique, the 10-bit ADC10061, ADC10062, and ADC10064 CMOS analog-to-digital converters offer sub-microsecond

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

ld 7522 ps

Abstract: LD 7522
Contextual Info: CMOS 10-Bit, Buffered Multiplying D/A Converter ANALOG DEVICES AD7522 AD7522 F U N C T IO N A L BLO C K DIA G RA M FEATURES 10-Bit Resolution 8-, 9- & 10-Bit Linearity Microprocessor Compatible Double Buffered Inputs Serial or Parallel Loading D T L /T T L /C M O S Direct Interface

D7002

Abstract: D7002c uPD7002 NEC D7002 PD7002 pd7002c BUA 7002 146C 7002C 8085 interrupt
Contextual Info: 3 ì 2 61 NEC < < > - D e s c rip tio n /¿PD7002 10-Bit A/D Converter & Pin C o n fig u ra tio n The ¿/PD7002 is a high perform ance, low power, 10-bit CMOS a na lo g-to -d igita l converter Using the integrating technique the 7002 offers the designer full m icro p ro c­

70878

Contextual Info: _ SÌ4882DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY r D S o n { & ) Id (A) 0.0105 @ V G S = 10 V ±11 0.0205 @ VGS = 4.5 V ±8 V d s (V) 30 D D P I D D oo

Si9420DY

Contextual Info: Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

k300k1

Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Contextual Info: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm

si4870

Contextual Info: _ SÌ4870DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY r D S o n { & ) Id (A) 0.006 @ V G S = 10 V ±16 0.009 @ VGS = 4.5 V ±13 V d s (V) < > < * 30 D D O o

Contextual Info: S/as/h=*P- AUT' Schottky Barrier Diode O UTLINE D IM E N S IO N S DF30PC3M Unit • mm Package I STO-220 10 9 ±&9- n^M ißT? CM 30V 30A •S M D • f f i V F= 0.4V •n w x m m m a • D C tti^ O R ffl • D C / D C □ yj {—$ > W • Ä w B lä s 1)

Contextual Info: CMOS A N A LO G D E V IC E S 220 MHz Pseudo-Color Graphics Triple 10-Bit Video RAM-DAC ADV7151 FEATURES 220 MHz, 10-Bit 30-Bit Gamma Corrected Pseudo Color (Indexed-Color) Triple 10-Bit "Gamma Correcting" D/A Converters Triple 256 x 10 (256 x 30) Color Palette RAM

Contextual Info: ° ecemH be; 1 R e v is e d A p ril 199 9 S E M IC O N D U C T O R TM FSTU6800 10-Bit Bus Switch with Pre-Charged Outputs and Undershoot Protection General Description is o p e n a n d th e B -p o rt is p re c h a rg e d to B ia s V th ro u g h an e q u iv a le n t 10-k£2 re s is to r.

Contextual Info: Tem ic SÌ4936DY S e m i c o n d u c t o r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 30 rDS(on) (Q) I d (A) 0.037 @ VGS = 10 V ±5.8 0.055 @ VGS = 4.5 V ±4.7 u D, SO-8 IÎ 3l O u D 2 Ö2 D! >| N -C h a n n el M O S F E T G2 c ji N -C h a n n el M O S F E T

Contextual Info: ▼ SÌ4820DY VISHAY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCTSUM M ARV V D* V 30 R d s «m ) IQ) I d (A) 0.0135 @ VGS^ 10 V ±1 0 0.020 @ VGS = 4.5 V ±8 D D D D in i SO-8 *Jt N-Channei MOSFET rn s 2 5 C U N L E S S O T H E R W IS E N O T E D }

Contextual Info: MP87095 CMOS 750 KSPS, Very Low Power, 10-Bit Analog-to-Digital Converter FEATURES BENEFITS • 10 - B i t Resol ut i o n • R e d u c e d Ex t e r na l Parts, No S a m p l e / H o l d N e e de d • S a m p l i n g Rat e s from <1 k H z to 750 K S P S •

Si4410DY

Abstract: Si4410DY-REVA Si4410DY-REVA-E3 Si4410DY-T1-A-E3 Si4410DY-T1-REVA
Contextual Info: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA

df20lc30

Contextual Info: □ - □ 3 . m n?â Surface Mount Super Fast Recovery Diode Twin Diode O UTLINE D IM E N S IO N S DF20LC30 U nit • mm Package I STO-220 10 9 ±0-9 M 300V 2 0 A >SMD m s 'i'x > trr3 0 n s >SRSÜ >DC/DC > 7 5 ^ * -f-J b (2)@ <D >^BsOAw0 ,^ K H s . FA