CY7C168A Search Results

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

4kx4 ram

Abstract: CY7C168A 7C168A 7C168A-45
Contextual Info: CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

CY7C128A SRAM

Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A

7C168A

Abstract: CY7C168A CY7C169A 7C169
Contextual Info: CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

7C168A

Abstract: CY7C168A CY7C168A-20VC
Contextual Info: 69A CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

7C168A-20

Contextual Info: CY7C168A 4 K x 4 RAM 4 K × 4 RAM Features Functional Description • Automatic power-down when deselected ■ Complementary metal oxide semiconductor CMOS for optimum speed/power ■ High speed ❐ tAA = 20 ns The CY7C168A is a high-performance CMOS static RAM

Contextual Info: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­

CY7C168A-45DMB

Abstract: 7C168A CY7C168A CY7C169A
Contextual Info: 1CY 7C16 9A CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A ’= C Y P R ESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and CY7C169A are high­

Contextual Info: ìf CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected CY7C168A T he CY7C168A and CY7C169A are highperform ance CM O S static RA M s orga­ nized as 4096 by 4 bits. Easy m em ory ex­ pansion isprovidedby an active LO W chip

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A ’= CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and CY7C169A are highperformance CMOS static RAMs orga­

4SCE

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected 7C168A CMOS for optimum speed/power High speed — ìaa = 15 ns — »ACE = 10 ns (7CI69A) Low active power — 385 mW Low standby power (7C168) — 83 mW TTL-compatible inputs and outputs

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A 4K x 4 RAM Features D The CY7C168A and CY7C169A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C168A has an automatic powerĆdown

CY7C

Abstract: LED1014 168A4
Contextual Info: CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • A utom atic power-down when deselected 7C168A • CMOS fo r optim um speed/power • High speed — tAA = 1 5 n s — tACE = 10 ns (7C169A) • Low active power — 385 mW The CY7C168A and CY7C169A are high-performance CMOS

Contextual Info: CY7C168A CY7C169A f^ Y P D T T C C 4K x 4 R/W RAM SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • Capable o f w ithstanding greater than 2001V electrostatic discharge is w ritten into the m em ory location speci­ fied on the address pins (Ao through A n ).

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • CMOS for optimum speed/power • High speed — t « = IS ns • Low active power — 385 mW • Low standby power (7C168) - 8 3 mW — tACE = 10 ns (7CI69A)

CY7C

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features A u to m atic pow er-dow n w hen dese­ lected 7C168A C M O S fo r o p tim u m speed/pow er H igh speed — 15 n s t*A — 10 n s U c e (7C169A) low active pow er — 385 m W Low stan d b y pow er (7C168)

CY7C128A 16k sram

Abstract: CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report June, 1994, QTP# 91423/93201 Version 1.1 16K Chop Redesign MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A 4K x 4 Static RAM

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C