CXK5825 Search Results

TSOP028-P-0000-B

Contextual Info: CXK58257ATM/AYM -70L/10L -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Block Diagram Description CXK58257ATM/AYM is a 256K-bit, 32,768-word-by8-bit, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small packages and low

Contextual Info: SONY CXK58257P/SP/M 32768-word X 8 bit High Speed CMOS Static RAM P ackage O u tlin e D e scrip tio n Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by 8 bits and operates from a single 5V supply. This

Contextual Info: 54E D SONY* • fl3023û3 GG04b?7 743 « S O N Y 7^ /6 *-«2? CXK58257AP/AM 12LB 32768-word x 8-bit High Speed CMOS Static RAM SO NY C O R P / C O M P O N E N T PROD S Description CXK58257AP/AM is a general purpose high speed CMOS static RAM organized as 32768 words by 8 bits.

CXK58258

Contextual Info: CXK58258AP/AJ SONY - 15/20/25 32,768-word X 8-bit High Speed C M O S Static RAM Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS sta tic RAM w h ich con sists o f 32,768-w ord x 8-bit. It operates a t 1 5 / 2 0 / 2 5 n s access tim e fro m 5V single pow er supply.

Contextual Info: CXK58255AP/AJ s o n y 32768-word X 8 bit High Speed CMOS Static RAM Description C XK58255A P and CXK58255AJ are 262,144 bits high speed CMO S static RAM s organized as 32, 768 words by 8bits and operate from a single 5V supply. These devices are suitable for use in high speed and

Contextual Info: SONY CXK58257ATM/AYM -12LB 32768-word x 8-bit High Speed CM OS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low

wiom DC

Abstract: 35GM wiom T3480 10 35L U1
Contextual Info: Sony. C X K 5 8 2 5 8 B P /B J /B M 32,768-word X I S ll 8-bit High Speed CMOS Static RAM * under development Description CXK58258BP 28 pin DIP Plastic The CXK58258BP/BJ/BM is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 20/25/35ns access time from 5V single

CXK58257CM

Abstract: A120 A130 CXK58257CTM SONY 28 pin SOP Plastic
Contextual Info: SONY CXK58257CTM/CYM/CM/CP -70LLX 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257CTM/CYM/CM/CP is 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. Special feature are operating on a single 5V supply, low power consumption and high speed and

CXK5825

Abstract: CXK58257 *k58257a S0P-28P-L05
Contextual Info: SONY. CXK58257AP/ASP/AM-70LLX/85LLX/1OLLX/12LLX ^lx/,olx/,2 l x 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/ASP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is

AWPn

Abstract: JG30 CXK58257B
Contextual Info: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely

CXK58257AP

Contextual Info: SONY CXK58257AP/AM ; LL 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP/AM is a 262,144 bit, high speed CMOS static RAM organized as 32,768-words-by-8-bits and operates from a single 5V supply. This device is suitable for use in high speed and low power applications in which

Contextual Info: SONY. CXK58257AP/ASP/AM -70LU85LL/1 OLL/12 L L * 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P / A S P / A M is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V

Contextual Info: CXK58257ATM/AYM -70LL/85LL/1 70L/85L/10L/1 2L L L OLL/12 SONY 32768-word X 8-bit High Speed CMOS Static RAM Description C XK 58257A TM /A Y M is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which require extremely small package

Contextual Info: SONY» CXK58257ATM/AYM -7 0 U J 8 5 L L /1 0 L L /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and battery back-up system s w h ich require extremely small package

CXK58257ATM

Abstract: CXK58257 SSTA14
Contextual Info: SONY» CXK58257ATM/A YM J o L u l ö L L / V o L L / l 2 L L Advance Information 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 3 2 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and ba tte ry back-up

CXK58257AM-70LL

Abstract: SONY 171 CXK58257AP
Contextual Info: S ony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX] 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is suitable

PIP02

Abstract: CXK58257AM CXK58257AP CXK58257ASP
Contextual Info: SONY. CXK58257AP/ASP/AM -7 0 L L /1 0 L L /1 2 L L * 32768-word x 8-bit High Speed CMOS Static RAM D escription C XK 58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V

Contextual Info: S O N Y CXK58257BTM/BM -70LLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK50257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

095 SONY

Contextual Info: CXK58258AP/AJ SONY. - 15/ 20/25 Preliminary 32,768-word x 8-bit High Speed CMOS Static RAM Description The C X K 58258A P /A J is a high speed CMOS static RAM which consists o f 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 n s access time from 5V single power supply.

Contextual Info: CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX SONY, 32768-word x 8-bit High Speed CMOS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by

CXK58257ATM

Contextual Info: CXK58257ATM/AYM -70LL/85LL/1 -70L/85U10LOLL/12LL /12L SONY 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32,768 w ords by 8 bits, CMOS static RAM.; It is suitable fo r portable and battery back-up

cxk58256pm

Abstract: CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04
Contextual Info: SONY CXK58256P/M 0 0 3 2 K-word X 8 bit High Speed CMOS Static RAM Package O utline Description The CXK58256P/M is a 262.144 bits high speed CMOS static RAM organized as 32 ,7 6 8 w ords by 8 bits and operates from a single 5V supply. The C X K 58256P /M is suitable fo r use in high

Contextual Info: SONY. CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V supply. T his device is suitable fo r use in high

Contextual Info: CXK58258P/SP -35/45/55 SONY 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 26 2,14 4 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w o rds by 8 -b it, it operates from a