CVE7900 Search Results

Contextual Info: CVE7900-48 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.4.0p C1/C2 Min. Capacitance Ratio6 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.4.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleChip Mounting StyleS

Contextual Info: CVE7900-42 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio6 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleChip Mounting StyleS

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: High Q GaAs Abrupt Tuning Diode Chips Features • ■ ■ ■ High Q - 4 ,000 to 15,000 W ide Tuning Capacitance Variation: 4/1 and 6/1 Typical Low Leakage - Nitride-Oxide Passivated X through Ka-Band Types ■ ■ C V E 7800 25 Volt Series C V E 7900 (45 Volt Series)

Gunn Diode

Abstract: CVE7800-18
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R MflE D • 05ASM43 00 01 30 7 4flT ■ ALP High Q GaAs Abrupt Tuning Diode Chips Features ■ ■ ■ ■ High Q - 4,000 to 15,000 Wide Tuning Capacitance Variation: 4/1 and 6/1 Typical Low Leakage - Nitride-Oxide Passivated

Contextual Info: 0585443 03 ALPHA DE | 0 5 6 5 4 4 3 IND/ SEMICONDUCTOR 0 0 0 Q 4 C B 03E 00498 D T “ 01 ~ H J~~ High-“Q ” GaAs Tuning Diode Chips Features • High “Q ” — 4,000 to 15,000 • Wide Tuning Capacitance Variation :4/1 and 6/1 Typical • Low Leakage — Nitride-Oxide Passivated