CUS10S30 Search Results
CUS10S30 Datasheets (1)
Toshiba Semiconductor and Storage
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CUS10S30,H3F |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 1A USC | Original | 135.35KB |
CUS10S30 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components CUS10S30,H3F- Tape and Reel (Alt: CUS10S30,H3F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS10S30,H3F | Tape & Reel | 18,000 | 24 Weeks | 3,000 |
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CUS10S30,H3F | 173,739 |
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CUS10S30,H3F | Reel | 66,000 | 3,000 |
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CUS10S30,H3F | 369 | 1 |
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CUS10S30,H3F | 295 |
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CUS10S30,H3F | 4,147 |
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Toshiba America Electronic Components CUS10S30,H3F(TSCHOTTKY DIODE, 30V, 1A, SOD-323; |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS10S30,H3F(T | Cut Tape | 42,199 | 1 |
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| CUS10S30,H3F(T | Tape & Reel | 42,199 | 100 |
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| CUS10S30,H3F(T | Tape & Reel | 3,000 |
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CUS10S30,H3F(T | 1,800 | 1 |
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CUS10S30,H3F(T | 1,440 |
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CUS10S30,H3F(T | 5 |
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CUS10S30,H3F(T | Tape & Reel | 9,000 | 3,000 |
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CUS10S30,H3F(T | 24 Weeks | 6,000 |
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CUS10S30,H3F(T | 22 Weeks | 3,000 |
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Toshiba America Electronic Components CUS10S30 H3F(T)Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS10S30 H3F(T) | 1,219 |
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Toshiba America Electronic Components CUS10S30,H3F(BDiode Schottky 30V 1A 2-Pin USC (Alt: CUS10S30,H3F(B) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS10S30,H3F(B | 24 Weeks | 3,000 |
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CUS10S30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CUS10S30 | |
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Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS10S30 |