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    CUS10S30 Search Results

    CUS10S30 Datasheets (1)

    Toshiba Semiconductor and Storage
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CUS10S30,H3F
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 1A USC Original PDF 135.35KB
    SF Impression Pixel

    CUS10S30 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components CUS10S30-H3F

    DIODE SCHOTTKY 30V 1A USC
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    DigiKey () CUS10S30-H3F Tape & Reel 97,275 3,000
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    CUS10S30-H3F Digi-Reel 97,275 1
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    CUS10S30-H3F Cut Tape 97,275 1
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    Toshiba America Electronic Components CUS10S30,H3F

    - Tape and Reel (Alt: CUS10S30,H3F)
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    Avnet Americas CUS10S30,H3F Tape & Reel 24 Weeks 3,000
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    Mouser Electronics () CUS10S30,H3F 46,654
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    CUS10S30,H3F 259
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    TTI CUS10S30,H3F Reel 75,000 3,000
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    Bristol Electronics CUS10S30,H3F 369 1
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    Quest Components CUS10S30,H3F 295
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    Chip 1 Exchange CUS10S30,H3F 4,147
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    Toshiba America Electronic Components CUS10S30,H3F(T

    Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R
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    Verical () CUS10S30,H3F(T 96,000 24,000
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    CUS10S30,H3F(T 1,020 53
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    Arrow Electronics () CUS10S30,H3F(T 96,000 21 Weeks 24,000
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    CUS10S30,H3F(T Cut Strips 1,020 53
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    Newark () CUS10S30,H3F(T Cut Tape 26,575 1
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    CUS10S30,H3F(T Tape & Reel 26,575 100
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    CUS10S30,H3F(T Tape & Reel 3,000
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    TME CUS10S30,H3F(T 5
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    Avnet Asia CUS10S30,H3F(T 24 Weeks 6,000
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    EBV Elektronik CUS10S30,H3F(T 22 Weeks 3,000
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    Toshiba America Electronic Components CUS10S30,H3F(B

    Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R
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    Verical CUS10S30,H3F(B 73 73
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    Avnet Asia CUS10S30,H3F(B 24 Weeks 3,000
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    Toshiba America Electronic Components CUS10S30 H3F(T)

    Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R
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    Bristol Electronics CUS10S30 H3F(T) 1,219
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    CUS10S30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original
    CUS10S30 PDF

    Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original
    CUS10S30 PDF