CTS52 Search Results

Contextual Info: CTS520 ショットキバリアダイオード シリコンエピタキシャル形 CTS520 1. 用途 • 高速スイッチング用 2. 特長 1 逆電流が小さい : IR(2) = 5 µA (最大) (2) 小型チップスケールパッケージ : 高さ = 0.40 mm (最大)

Contextual Info: CTS521 Schottky Barrier Diode Silicon Epitaxial CTS521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.5 V (max) (2) Thin and compact package : Thickness = 0.40 mm (max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: CTS520 Schottky Barrier Diode Silicon Epitaxial CTS520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small chip scale package: Thickness = 0.40 mm (max) 3. Packaging and Internal Circuit 1: Cathode 2: Anode

Contextual Info: CTS521 ショットキバリアダイオード シリコンエピタキシャル形 CTS521 1. 用途 • 高速スイッチング用 2. 特長 1 順電圧が小さい。 : VF(3) = 0.5 V (最大) (2) 低背小型パッケージ。 : 厚さ = 0.40 mm (最大)

Contextual Info: CTS521 Schottky Barrier Diode Silicon Epitaxial CTS521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.5 V (max) (2) Thin and compact package : Thickness = 0.40 mm (max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: CTS520 Schottky Barrier Diode Silicon Epitaxial CTS520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small chip scale package: Thickness = 0.40 mm (max) 3. Packaging and Internal Circuit 1: Cathode 2: Anode

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

CTS522

Abstract: ASTM-B124 CTS52
Contextual Info: REV. C T S5 2 2 -I This print and asso ciate d docum ents and the contained inform ation a re the confidential property of ELECTRONIC CABLE SPEC IALIST S. Disclosure of, a n d / o r reproduction of, all or part thereof or m anufacture of any part from inform ation contained on this print not specifically per­

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

Contextual Info: Shielded Inductors - Axial ctparts.com CTS5 Series From 1 µH to 100 µH Not shown at actual size. Ver. 8.3 SPECIFICATIONS Please specify tolerance code when ordering. CTS5-1R0_ J = ±5%, K = ±10% Part Number Inductance µH L Test Freq. (MHz) Q Factor Min.

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A

RTS522

Contextual Info: 50 Ohm Coaxial Cable P/N 532101 Conductor Shield 1 Dielectric Outer Jacket Shield 2 Marker Tape CONSTRUCTION DETAILS PHYSICAL CHARACTERISTICS Conductor: 22 AWG stranded silver-plated copper Dielectric: High temperature fluoropolymer Shield 1: Aluminum tape

Contextual Info: 50 Ohm Coaxial Cable P/N 432101 Conductor Shield 1 Dielectric Outer Jacket Shield 2 Marker Tape CONSTRUCTION DETAILS PHYSICAL CHARACTERISTICS Conductor: 20 AWG stranded silver-plated copper Dielectric: High temperature fluoropolymer Shield 1: Aluminum tape