CTLDM30 Search Results

CTLDM30 Datasheets (5)

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Central Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CTLDM303N-M832DS		Central Semiconductor	FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 12V 3.6A DL TLM832DS	Original	PDF		2
CTLDM303N-M832DS BK		Central Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET DUAL N-CHANNEL	Original	PDF	827.88KB
CTLDM303N-M832DS TR		Central Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 3.6A TLM832DS	Original	PDF	750.48KB
CTLDM304P-M832DS		Central Semiconductor	FETs - Arrays, Discrete Semiconductor Products, MOSFET P-CH 12V 4.2A DL TLM832DS	Original	PDF		2
CTLDM304P-M832DS TR		Central Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 4.2A TLM832DS	Original	PDF	750.52KB

CTLDM30 Price and Stock

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Central Semiconductor Corp


Central Semiconductor Corp CTLDM304P-M832DS T - Tape and Reel (Alt: CTLDM304P-M832DS T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CTLDM304P-M832DS T	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp CTLDM304P-M832DS TR - Tape and Reel (Alt: CTLDM304P-M832DS TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CTLDM304P-M832DS TR	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp CTLDM303N-M832DS T - Tape and Reel (Alt: CTLDM303N-M832DS T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CTLDM303N-M832DS T	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp CTLDM303N-M832DS TR - Tape and Reel (Alt: CTLDM303N-M832DS TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CTLDM303N-M832DS TR	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CTLDM30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c330 TRANSISTOR Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient	Original	ctldm303n-m832ds ctldm303nm832ds tlm832ds 54mm2 +228-august c330 transistor	PDF
transistor c430 Abstract: P-channel power mosfet mosfet 15v 10A Contextual Info: CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver	Original	ctldm304p-m832ds tlm832ds transistor c430 p-channel power mosfet +1mosfet 15v 10a	PDF
MOSFET 50V 100A Contextual Info: RY A IN CTLDM301N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers	Original	ctldm301n 100ma inctldm301n mosfet 50v 100a	PDF
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver	Original	ctldm303n-m832ds tlm832ds 54mm2	PDF
CTLDM30 Contextual Info: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode	Original	ctldm303n-m832ds ctldm304p-m832ds tlm832ds 21x9x9 +227x9x17 ctldm30	PDF
N and P MOSFET Contextual Info: RY A IN CTLDM301N IM LSURFACE E MOUNT SILICON R P w w w. c e n t r a l s e m i . c o m N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is a silicon N-channel enhancement-mode MOSFET designed for applications including high speed pulsed amplifiers	Original	ctldm301n 100ma inctldm301n n and p mosfet	PDF
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient	Original	ctldm303n-m832ds ctldm303nm832ds tlm832ds 54mm2	PDF
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver	Original	ctldm303n-m832ds tlm832ds 54mm2	PDF
TMC248-LA Abstract: TMC248 datasheet Contextual Info: POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC248 DATASHEET Low-cost stepper driver for two-phase bipolar motors with low noise PWM chopper and stallGuard . External MOSFETs fit different motor sizes. With SPI, classic analog interface, protection & diagnostics.	Original	tmc248 2013-mar-26 2012-jun-22 tmc249 +4tmc32np-pso tmc34np-pso tmc248-la tmc248 datasheet	PDF
Contextual Info: PROCESS CP773 MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS Source Bonding Pad Area 30 x 20 MILS Top Side Metalization Al - 40,000Å Back Side Metalization	Original	cp773 cmpdm302ph ctldm304p-m832ds 18-october	PDF