CTLDM30 Search Results
CTLDM30 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CTLDM303N-M832DS |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 12V 3.6A DL TLM832DS | Original | 2 | |||
CTLDM303N-M832DS BK |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET DUAL N-CHANNEL | Original | 827.88KB | |||
CTLDM303N-M832DS TR |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 3.6A TLM832DS | Original | 750.48KB | |||
CTLDM304P-M832DS |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET P-CH 12V 4.2A DL TLM832DS | Original | 2 | |||
CTLDM304P-M832DS TR |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 4.2A TLM832DS | Original | 750.52KB |
CTLDM30 Price and Stock
Central Semiconductor Corp CP373-CTLDM303N-CTMOSFET N-CH 30V 3.6A DIE |
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CP373-CTLDM303N-CT | Bulk |
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Central Semiconductor Corp CP373-CTLDM303N-WNMOSFET N-CH 30V 3.6A DIE |
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CP373-CTLDM303N-WN | Bulk |
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Central Semiconductor Corp CTLDM303N-M832DS-TRMOSFET 2N-CH 30V 3.6A TLM832DS |
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CTLDM303N-M832DS-TR | Digi-Reel | 1 |
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Central Semiconductor Corp CTLDM303N-M832DS-BKMOSFET 2N-CH 30V 3.6A TLM832DS |
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CTLDM303N-M832DS-BK | Bulk |
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Central Semiconductor Corp CTLDM304P-M832DS-TRMOSFET 2P-CH 30V 4.2A TLM832DS |
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CTLDM304P-M832DS-TR | Reel |
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CTLDM30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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c330 TRANSISTORContextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient |
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CTLDM303N-M832DS CTLDM303NM832DS TLM832DS 54mm2 28-August c330 TRANSISTOR | |
transistor c430
Abstract: P-channel power mosfet mosfet 15v 10A
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CTLDM304P-M832DS TLM832DS transistor c430 P-channel power mosfet mosfet 15v 10A | |
MOSFET 50V 100AContextual Info: RY A IN CTLDM301N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers |
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CTLDM301N CTLDM301N 100mA INCTLDM301N MOSFET 50V 100A | |
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver |
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CTLDM303N-M832DS TLM832DS 54mm2 | |
CTLDM30Contextual Info: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode |
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CTLDM303N-M832DS CTLDM304P-M832DS TLM832DS TLM832DS CTLDM303N-M832DS CTLDM304P-M832DS 21x9x9 27x9x17 CTLDM30 | |
N and P MOSFETContextual Info: RY A IN CTLDM301N IM LSURFACE E MOUNT SILICON R P w w w. c e n t r a l s e m i . c o m N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is a silicon N-channel enhancement-mode MOSFET designed for applications including high speed pulsed amplifiers |
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CTLDM301N CTLDM301N 100mA INCTLDM301N N and P MOSFET | |
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient |
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CTLDM303N-M832DS CTLDM303NM832DS TLM832DS 54mm2 | |
Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver |
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CTLDM303N-M832DS TLM832DS 54mm2 | |
TMC248-LA
Abstract: TMC248 datasheet
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TMC248 2013-MAR-26) 2012-JUN-22 2013-MAR-26 TMC249 TMC32NP-PSO] TMC34NP-PSO] TMC32NP-PSO TMC34NP-PSO TMC248-LA TMC248 datasheet | |
Contextual Info: PROCESS CP773 MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS Source Bonding Pad Area 30 x 20 MILS Top Side Metalization Al - 40,000Ã… Back Side Metalization |
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CP773 CMPDM302PH CTLDM304P-M832DS 18-October |