CT25ASJ Search Results

Contextual Info: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 ' VCES . ' ICM. ' Drive Voltage ' Small Package . 400V . 150A V g e =4V MP-3 APPLICATION S tro b e Flasher. MAXIMUM RATINGS

STROBE FLASHER USE IGBT

Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE !i CT25ASJ-8 * % • VCES . 400V • ICM . 150A

CT25ASJ-8

Abstract: cm400uf
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 1.0 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 0.5 ± 0.2 2.3 0.8 1 2 3 wr q GATE w COLLECTOR

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

CT25ASJ-8

Abstract: 400UF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

ka7745

Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Contextual Info: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt FOfTTI D 3Î3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc =:25°C Device Electrical Characteristics VcE(SAT), (V) Max. Typ- tf(max) (|iS ) 3.0

CT25ASJ-8

Abstract: CT25ASJ
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

ka7745

Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Contextual Info: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is

CT-30sm-12

Abstract: TQ-220F
Contextual Info: • IGBT FOR STROBO FLASHER Max. ratings Type No. V •on A} Vÿfft - - “ 400 130 40 10 ±0.1 7.0 400 130 40 10 ±0.1 7.0 TQ-220F 400 130 40 10 ±0.1 7.0 TO-HOiFin-eut! 400 130 40 10 ±0.1 400 130 16 10 ±0.1 4.0 400 130 16 10 ±0.1 2.0 TO-220|F¡n-cul¡

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5