CT RATIO TEST Search Results

208H

Contextual Info: 1. M echanical D im ensions: 0.51 Max — c 0.245 Max — 3. E lectrical Specifications:@ 25°C Isolation Voltage: 1500Vac Jf Turns Ratio: Pins 1 - 2 - 3 : ( 1 6 - 1 5 - 1 4 )= 1 CT:2CT I'S ii 0.030 — I 0.016 E 0.350 _ Turns Ratio: Pins ( 6 - 7 - 8 ) : ( 1 1 - 1 0 - 9 ) = 1 CT:2CT

T-972

Abstract: MAXIM 5.1 circuit diagram schematics MAX253 MAX253 TRANSFORMER Maxim MAX253 T972
Contextual Info: Pulse Transformer Designed for use with Maxim MAX253 +5V to Isolated +5V Application Turns Ratio + 5 % 1 CT : 1.3 CT (Pins 5-1:6-2) Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 100mV, @ 100.0 KHz 1.0 Leakage Inductance

XF0013W15A

Abstract: XF001 208H
Contextual Info: 1. M echanical D im ensions: 3. E lectrical Specifications:@ 25°C A •0.68 Max~ |— 1~ Turns Ratio: Pins 1 —2—3 :(12-11 - 1 0)=1 CT: 1CT±2% 0 .1 0 0 ñ ñ ñ ñ ñ ñ . Turns Ratio: Pins (4-5-6):(9-8-7)= 1 CT:2CT±2% XFMRS o X F 00 1 3W 15 A YYWW

T-942

Abstract: MAXIM T942 5.1 circuit diagram schematics circuit diagram transformer electric MAX253 T-972
Contextual Info: Pulse Transformer Designed for use with Maxim MAX253 +5V to Isolated +5V Application Turns Ratio + 5 % 1 CT : 1.3 CT (Pins 5-1:6-2) Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 100mV, @ 100.0 KHz 1.0 Max. mH Leakage Inductance

T-939G

Abstract: MAXIM 6 pin pulse transformer MAX253
Contextual Info: Turns Ratio + 5 % Pulse Transformer 1 CT : 1.3 CT (Pins 1-3:4-6) Units Designed for use with Maxim MAX253 mH Only recommended for applications where FS is High or Open Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 50mV, @ 100.0 KHz

01b SMD

Abstract: 208H 1p5 smd
Contextual Info: 1. Dim ensions: 3. E le c tric a l S p e c ific a tio n s :@ 2 5 <>C A Max — - Isolation Voltage: C 0 .2 4 5 Max - — 0.51 1500 Vrms Turns Ratio: 1 6 - 1 5 - 1 4 :(1 - 2 - 3 ) = 1CT:1 CT ±3% i H 0 .0 3 0 0.016 Turns Ratio: <6— 7 — S):(1 1 - 1 0 -9 > = 1 CT:1.36CT ±3%

50MHZ

Contextual Info: S c h e m a t ic : E le c t r ic a l Isolation Voltage: S p e c if ic a t io n s : 1500Vac J1.J2 to (P1.P3) Isolation Voltage: 1500Vac (J3.J6) to (P4.P6) Turns Ratio: (PB-P5-F4):{J6-J3)=1,41 CT:1 CT±3% Turns Ratio: (P3-P2-P1):(J2-J1)=1CT:1CT±3% OCL: J3 -J6 : 350uH Min @100KHz 1D0mV SmADC

Contextual Info: SMN Vishay Foil Resistors High Precision Surface Mount 4 Resistor Network Dual-In-Line Package with TCR Tracking ≤ 0.5 ppm/°C, Tolerance Match of 0.01 % and Ratio Stability of 0.005 % FEATURES INTRODUCTION PR O DU CT Any value and any ratio available within resistance range

Contextual Info: SMN Vishay Foil Resistors High Precision Surface Mount 4 Resistor Network Dual-In-Line Package with TCR Tracking ≤ 0.5 ppm/°C, Tolerance Match of 0.01 % and Ratio Stability of 0.005 % FEATURES INTRODUCTION PR O DU CT Any value and any ratio available within resistance range

LT 2807

Abstract: XF001
Contextual Info: 1. Mechanical Dimensions: 1.115 Max 3. E lectrica l S p ecifica tio n s: 25°C Isolation: 1500 Vrms PRI to SEC TX Turns Ratio: 2:1 <PRI:SEC) RCV Turns Ratio: 2:1 CT (PRI:SEC) PRI OCL: 1,20mH Min @100KHz 50mV Cw/w: 30pF Maximum @100KHz 50mV (PRl/SEC) in

NTE618

Contextual Info: NTE618 Varactor Silicon Tuning Diode for AM Radio Description; The NTE618 is a silicon varactor diode designed for electronic tuning of AM receivers and high capacitance, high tuning ratio applications. Features: D High Capacitance Ratio: CR = 15 Min D Guaranteed Diode Capacitance: Ct = 440pF (Min), 560pF (Max) @ VR = 1V, f = 1MHz

0013B24

Abstract: 208H
Contextual Info: 1. D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i e a t i o n s :@ 2 5 ° C Isolation Voltage: A - — 0.51 Max —- 1500 VAC Turns Ratio: 1 - 2 - 3 : ( l 6 -1 5 - 1 4) = 1CT:2.4CT ±3% 4 9 2 a LD o IN X a Turns Ratio: ( 6 - 7 - 8 ) : ( l 1 - 1 0 - 9 ) = 1 CT:1 CT ±3%

5Ct 14

Abstract: 208H
Contextual Info: 1. Dimensions: 3. E lectrical A 0.51 Isolation Voltage: Max — I o q C 0 .2 4 5 Max — Specification s: 25°C 1500 V rm s Turns Ratio: (1 6 - 1 5 - 1 4 :(1 - 2 - 3 ) = 1.1 5CT:1 CT ±3% o Jf IT 5 U L J T 0 .0 3 0 — I I— 0.01 6 o d Turns Ratio: ( 6 — 7 — S):(1 1 — 10 — 9) = 1.1 5CT:1 CT ± 3 %

XF0013BN15

Abstract: 0013bn15
Contextual Info: 3. E l e c t r i c a l S p e c ific a tio n s:@ 2 5 C 1. M e c h a n ic a l D im e n s i o n s : Max —- Isolation Voltage: 1500Vac, 60 Seconds • ‘t o c Max c 0.245 -—0.51 Turns Ratio: Pins 1 6 - 1 5 - 1 4 :(1 - 2 - 3 )= 1 CT:1 CT±2% o y $ j Turns Ratio: Pins (6 —7 —8 ):(1 1- 1 0 - 9 )= 1CT:2CT±2%

Contextual Info: 3. Electrical Specifications: @25°C 1. Mechanical Dimensions: 0.730 ISOLATION: 1500 Vrms Prf -to Sec Max TURNS RATIO: P R l/S E C 1 CT:1 CT ± 2 % 0CL: 3 5 0 uH MIN @100KHz 100mV 8mADC o Rise Time: 1,75ns Max. 0 .0 4 5 0 .0 2 5 •±=, - it 0 .0 0 4 E

2805

Abstract: 3B46 XF001
Contextual Info: 1. Dim ensions: 3. E l e c tr ic a l ISOLATION VOLTAGE: c 0.220 Max -—0.50 Max — * J H- Tu RATIO: 1 6 - 1 5 - 1 4 :( 1 - 2 ) : ( 3 - 4 ) = 1 C T :1 :1 ± 5 % IDOo TURNS RATIO: (1 1 - 1 0 - 9 ) : ( 5 - 6 ) : ( 7 - 8 ) = 1 CT: 1:1 %p5% rq o 'd o

coy80

Abstract: EL 4N25 120 4N25 4N26 4N27 4N28 4N35 4N36 4N37 4N38
Contextual Info: ISOCOM COMPONENTS Photo Transistor Photo Transistor - Safety Approvals, VDE 0884, BSI, SETI and UL *Note 1 Part Number Features 4N25 Current Transfer Ratio Min % CT R Test Conditions Isolation Test Voltage KV Co n tinu o u s Forward Current Max (m A) B V ceo

CNYI7F-3

Abstract: m0c811 SFH601-5 CNX82A SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600-4 SFH601-2
Contextual Info: ISOCOM COMPONENTS Photo Transistor - Safety Approvals, VDE 0884, BSI, SETI and UL continued ‘ Note 1 Part Number Features Current Transfer Ratio Min (% ) SFH600-0 4 0 -8 0 SFH600-1 6 3 -1 2 5 CT R Test Conditions Con tinu ou s Forward Current M ax (mA)

smd t5c

Abstract: XF35066NC
Contextual Info: D im e n s io n s : 3. Electrical Specifications:@ 25°C A - — 0.51 Max —Isolation Voltage: q s o 1 d^. U u Turns Ratio: 1 - 2 - 3 : ( 1 6 - 1 5 -1 4 )= 1 C T :1 CT±3% 1 u. <6—7 —8 } : ( 1 1 —10—9)=1C T:1 CT±3% 0 .0 3 0 OCL: Pins 0.01 6 C w /w :

cdi schematics

Abstract: cdi schematic XF0013B4
Contextual Info: 3. E l e c t r i c a l 1. D im e n s i o n s : A Max —- Isolation Voltage: '=Jo a d c 0.2 4 5 Max - — 0.51 $ U 1500 VAC Turns Ratio: 1 6 - 1 5 - 1 4 :(1 —2 —3) = 1CT:1.15CT ±3% Turns Ratio: ( 6 - 7 - 8 > : ( l 1 - 1 0 - 9 ) = 1 CT:2CT ±3% j J§

Contextual Info: L IT E - O N E L E CT RO NICS, INC. Property of Lite-on Only FEATURES * * Current transfer ratio CTR : MIN. 40% at IF = 5mA, VCE = 5V * High isolation voltage between input and output ( Viso = 5,000Vrms ) * High collector-emitter voltage (VCEO : 300V)

Contextual Info: 1. M echanical D im ensions: 3. E lectrical S p ecification s: 25°C Isolation: 1500Vrms XFMRS , TURNS RATIO: Pins 1 -2 -3 :1 6 -1 5 -1 4 = 1 C T :1 C T ± 2 % WWW TURNS RATIO: Pins (6 -7 -8 :1 1 - 1 0 - 9 ) = 1 CT:1.414CT±2% XF20065A u u u u u u u PRI OCL: 200±20%uH @10KHz 0.1V

JDP2S04E

Contextual Info: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ.

Contextual Info: CA co CD c A djacent C apacitance Case C apacitance Diagonal ca p a cita n ce Junction C apacitan ce CT c x/ c Y Total C apacitance f Test Frequency fco Cutoff Frequency F, Tuning Ratio Frequency Input f„ Intermediate Frequency Fo O utput Frequency Fo p e r