CSD58887Q3 Search Results
CSD58887Q3 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| CSD58887Q3 |
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CSD58887 - 25V N-Channel NexFET Power MOSFET 8-SON -55 to 150 | Original | 814.17KB | 11 |
CSD58887Q3 Price and Stock
Texas Instruments CSD58887Q3Power Field-Effect Transistor, 21A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CSD58887Q3 | 6,230 |
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CSD58887Q3 Datasheets Context Search
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Contextual Info: CSD58887Q3 www.ti.com SLPS408 – JANUARY 2013 N-Channel NexFET Power MOSFETs Check for Samples: CSD58887Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V Ultra Low Qg and Qgd |
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CSD58887Q3 SLPS408 | |
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Contextual Info: CSD58887Q3 www.ti.com SLPS408 – JANUARY 2013 N-Channel NexFET Power MOSFETs Check for Samples: CSD58887Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V Ultra Low Qg and Qgd |
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CSD58887Q3 SLPS408 | |
M0161Contextual Info: CSD58887Q3 www.ti.com SLPS408 – JANUARY 2013 N-Channel NexFET Power MOSFETs Check for Samples: CSD58887Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V Ultra Low Qg and Qgd |
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CSD58887Q3 SLPS408 CSD58887Q3 13-inch M0161 |