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Catalog Datasheet	Type	Document Tags	PDF
12v inverter Abstract: 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CS101 10-Layer CHIP IPS serdes hsif Contextual Info: 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors • Advanced lithography and etch technology to achieve 40nm gate length • Low temperature process for shallow junction • Process optimization for high carrier mobility 9Cu/1Al interconnect	Original	CS101 10-layer CS101HU WFS-FS-20164-9/2004 12v inverter 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CHIP IPS serdes hsif	PDF

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12v inverter

Abstract: 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CS101 10-Layer CHIP IPS serdes hsif
Contextual Info: 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors • Advanced lithography and etch technology to achieve 40nm gate length • Low temperature process for shallow junction • Process optimization for high carrier mobility 9Cu/1Al interconnect

Original

CS101 10-layer CS101HU WFS-FS-20164-9/2004 12v inverter 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CHIP IPS serdes hsif

PDF