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12v inverter

Abstract: 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CS101 10-Layer CHIP IPS serdes hsif
Contextual Info: 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors • Advanced lithography and etch technology to achieve 40nm gate length • Low temperature process for shallow junction • Process optimization for high carrier mobility 9Cu/1Al interconnect