CS 3820 Search Results

Contextual Info: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.

rso 4890

Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA & 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

XPS 1540

Abstract: cs 5390 63FBGA M393T5663CZ3 CS 5800 M393T5160CZA
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA & 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M393B5170EH1-CF8

Abstract: M393B2873EH1 M393B5170EH1 M393B5670EH1
Contextual Info: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M393B2K70CM0-YF8

Abstract: M393B1K70CH0 K4B2G0846C-HY M393B5273CH0 DDR3 DIMM 240 pinout K4B2G0446C M393B2K70CM0 M393B1K70CH0-YF8 K4B4G0446C-MY 5256 DRAM
Contextual Info: Rev. 1.01, Jan. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: Rev. 1.01, Jan. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

DDR3 DIMM 240 pinout

Abstract: K4B1G0846B Design Guide for DDR3-1066 M393B5170EH1-CF8 DDR3 DIMM K4B1G0846B-HC M393B5170EH1 ddr3 RDIMM pinout DDR3 RDIMM samsung m393
Contextual Info: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4T2G044QC

Abstract: K4T1G084QC M393T5160 63FBGA M393T5663CZ3
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA & 63FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: Rev. 1.1, May. 2010 M392B5773CH0 M392B5273CH0 M392B5270CH0 M392B1K70CM0 M392B1K73CM0 240pin VLP Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

K4B2G0846C-HY

Contextual Info: Rev. 1.1, May. 2010 M392B5773CH0 M392B5273CH0 M392B5270CH0 M392B1K70CM0 M392B1K73CM0 240pin VLP Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: 256Mx72 bits DDR2 SDRAM Registered DIMM HYMP125R72 L M4 Revision History No. 0.1 0.2 History Draft Date Initial Release Mar. 2004 Corrected IDD Spec. May. 2004 Corrected Pin assignment table & SPD typo(#42) July 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 256Mx72 bits DDR2 SDRAM Registered DIMM HYMP125R72 L M4 Revision History No. History Draft Date 0.1 Initial Release Mar. 2004 0.2 Corrected IDD Spec. & SPD typo (byte #22,#30) May. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

HY5PS1G421

Abstract: DDR2-400 DDR2-533 PC2-3200 PC2-4300 RA13 M4C5 M4C5 1
Contextual Info: 256Mx72 bits DDR2 SDRAM Registered DIMM HYMP125R72 L M4 Revision History No. 0.1 0.2 History Draft Date Initial Release Mar. 2004 Corrected IDD Spec. May. 2004 Corrected Pin assignment table & SPD typo(#42) July 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA 256M words x 72 bits, 2 Ranks Description Features The EBD21RD4ABNA is a 256M words × 72 bits, 2 ranks Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of DDR SDRAM sealed in TCP

DDR200

Abstract: DDR266A DDR266B EBD21RD4ABNA EBD21RD4ABNA-10 EBD21RD4ABNA-7A EBD21RD4ABNA-7B
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA 256M words x 72 bits, 2 Banks Description Features The EBD21RD4ABNA is a 256M words × 72 bits, 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of DDR SDRAM sealed in TCP package. Read and write operations are performed at

d29 transistor to-98 package

Abstract: E0237E EDD5104ABTA DDR266A DDR266B DDR333B EBD21RD4ABNA EBD21RD4ABNA-10 EBD21RD4ABNA-7A EBD21RD4ABNA-7B
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA 256M words x 72 bits, 2 Ranks Description Features The EBD21RD4ABNA is a 256M words × 72 bits, 2 ranks Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of DDR SDRAM sealed in TCP

Contextual Info: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42RE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

A1870

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM Complete monolithic resolver-to-digital converter 3125 rps maximum tracking rate 10-bit resolution ±2.5 arc minutes of accuracy 10-/12-/14-/16-bit resolution, set by user Parallel and serial 10-bit to 16-bit data ports

K4B2G0846

Abstract: K4B4G0846C DDR3 DIMM 240 pinout K4B2G04 M392B1K70CM0 K4B4G0846 K4B4G0 K4B2G0446C DDR3 DDR3L
Contextual Info: Rev. 1.0, Jan. 2010 M392B5773CH0 M392B5273CH0 M392B5270CH0 M392B1K70CM0 240pin VLP Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

EBJ42RE8BAFA

Contextual Info: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42RE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

M6264

Abstract: HM6264LM-90 hm6264lwm-70 HM6264LM HM6264L 6264lm
Contextual Info: HM 6264m ,HIV16264LR,HM 6264LK,HM 6264LM ,7 ?TW l 8K X 8 CMOS STATIC General D e scrip tio n The HM6264L is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with high performance twin tub CMOS process. Inputs

IBM11M4730C4M

Contextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13M32734BCC 32M x 72 2 Bank Registered SDRAM Module Preliminary Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance Registered Mode : DIMM CAS Latency fCK Clock Frequency

KS0105

Abstract: capacitor 1-35 L V6 KS0106 2576-5 29 pin dot matrix lcd C860 36C32 32-bit shift register 28 pin DOT MATRIX LCD
Contextual Info: KS0105 32 CH COMMON DRIVER FOR DOT MATRIX LCD _ INTRODUCTION 64 QFP KS0105 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. This device consists of timing generator circuit, 32 bit shift register and 32 bit driver.

EBE20AE4ABFA-6E-E

Abstract: DDR2-667 EBE20AE4ABFA
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20AE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory