CS 110 THYRISTOR Search Results

CS 35 go 06 thyristor

Abstract: thyristor CS 3510 CS thyristor CS 142-06
Contextual Info: A S E A BRO WN/ABB SEMICON Netzthyristoren Thyristor A Tvj =45°C tvjm A A AJS A“S go 4 go 4 io 4 io 4 io 4 400 600 800 1000 1 200 120 70/84 60 1 250 1100 7200 go go go go 8 8 8 8 400 800 1000 1 200 110 70/52 48 790 720 3200 à CS 52-06 go I C S 52-08 io

CS 110 thyristor

Abstract: CS thyristor CS 142-06 THYRISTOR cs 550 16 CS 101-40 CS thyristor cs 6 thyristor CS 3510 thyristor CS 3512 ABB ACS 800 thyristor cs 550 CS thyristor
Contextual Info: A S E A BRO WN/ABB SEMICON Netzthyristoren Thyristor A Tvj =45°C tvjm A A AJS A“S go 4 go 4 io 4 io 4 io 4 400 600 800 1000 1 200 120 70/84 60 1 250 1100 7200 & CS 48-06 go 8 400 800 1000 1 200 110 70/52 48 790 720 3200 1 1 1 1 1 1 600 8 00 bzw. resp. 1000

CS 110 thyristor

Abstract: WG30060SN
Contextual Info: WESTCODE Date : Jul-00 Data sheet Issue 2 Gate turn off Thyristor Type WG30060SN Absolute maximum ratings MAXIMUM VOLTAGE RATINGS LIMITS VDRM Repetitive peak off-state voltage, note 1 . 6000 VDSM Non-repetitive peak off-state voltage, (note 1). 6000 VRRM

thyristor BBC CS 0,6

Abstract: thyristor BBC thyristor BBC cs 16 thyristor BBC CS thyristor BBC cs 3 02 do2 thyristor BBC cs 550 bbc cs 130 thyristor brown boveri thyristors BBC CS-130-08 thyristor BBC CS 3,5
Contextual Info: BBC Technical Data Silicon-Semiconductor BTOW NB0U6BI Components Printed order nr. Thyristors D GHS 30393 E T h y ris to rs a re c o n tro lle d s e m ic o n d u c to r ce lls . T h e y a re b e in g p ro d u c e d in a fo u r layer a rra n g e m e n t w ith a lto g e th e r th re e pn ju n c tio n s Si, s 2, s3, see Fig. 1 b. In reverse

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

G3000TC600

Abstract: Gate Turn Off Thyristor GTO CS 110 thyristor GTO thyristor 300A thyristor gate control circuit G3000 G3000TC gto Gate Drive circuit THYRISTOR GTO 200A thyristor gate control circuit
Contextual Info: WESTCODE An Date:- 1 Oct, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G3000TC600 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 6000 V VDSM Non-repetitive peak off-state voltage, (note 1)

CS5 thyristor

Abstract: CS 23-16 thyristor CS 23-08 thyristor CS 23-06 thyristor CS 110 thyristor CS 23-04 thyristor CS thyristor cs 6-06 cs 16-12 cs 6-06 CS thyristor cs 6
Contextual Info: Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lf ic Itavm 85°C r Typ/type CS 0,8-02 do CS 0,8-04 do CS 0,8-06 do CS 0,8-07 do CS 0,8-08 do CS CS CS CS CS 3-02 3-04 3-06 3-07 3-08 do do do do do 2 2 2 \ bzw. 2 2 r 2 21 bzw.

THYRISTOR cs 550 16

Abstract: thyristor cs 550 CS 110 thyristor CS 250-12 thyristor CS thyristor cs 6 thyristor cs 52 CS thyristor cs 5-10
Contextual Info: A S E A BROWN/ABB SENICON D^ A3 OOMflBOñ □□□□173 Netzthyristoren Thyristor Jf Vdrm Vrrm •trm s V A kAVi^C •tavm Tc = 85°C A/°C A Itsm ft Ovjm 10 ms) 8,3 ms 10 ms Tv j=45°C tvjm A2S A!s A A 3300 54500 45000 V A 350/70 275 CS 295-08 to 4 CS 295-12 to 4

ACS 085

Abstract: thyristor cs 550 THYRISTOR cs 550 16 CS 250-12 thyristor CS 250-14 CS thyristor cs 411-23 abb acs 550 CS thyristor cs 6 CS 250-12
Contextual Info: A S E A B R O U N / ABB SEMICON A3 D O M flB O a D .□ □ □ □ 1 7 3 3 J " ' T - 2.5 - 0 Phase control thyristors Netzthyristoren Thyristor Vdrm Vrrm Itrms V A * TvD/tvue rAvi/Tc Itavm To = 85°C ATC A 8,3 ms 10 ms TVJ=45°C tvjm A A2s A2s 400 CS 226-04 go 1

Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

MOS Controlled Thyristor

Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
Contextual Info: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC

SCR 2146

Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Contextual Info: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30

ABB thyristor 5

Abstract: GTO ABB GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 6000 3000 24 1.70 0.60 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

GTO Snubber Capacitor

Abstract: 30J60
Contextual Info: Key Parameters VDRM = 6000 ITGQM = 3000 ITSM = 24 VT0 = 1.70 rT = 0.60 VDClink = 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 April 98 Features The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter non-shorted anode GTO

IGCT thyristor ABB

Abstract: IGCT
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.80 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT

Abstract: IGCT thyristor ABB igct abb IGCT thyristor current max gct thyristor HFBR-2528
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

igct abb

Abstract: IGCT thyristor ABB C340A 5SHX 14
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.80 4.7 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 Doc. No. 5SYA 1224-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

19-12ho1

Contextual Info: CS 19 Phase Control Thyristors VRSM VDSM VRRM VDRM Type V V 800 1200 800 1200 VRRM = 800-1200 V IT RMS = 29 A IT(AV)M = 19 A TO-220 AB Type A TO 220 C TO 263 C A G A (TAB) G CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S TO-263 AA C G Test Conditions IT(RMS)

Contextual Info: CS 19 Advanced Technical Information Phase Control Thyristors VRSM VDSM VRRM VDRM Type V V 800 1200 800 1200 VRRM = 800-1200 V IT RMS = 29 A IT(AV)M = 19 A TO-220 AB Type A TO 220 C TO 263 C A G A (TAB) G CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S

IXYS SCR Gate Drive

Contextual Info: CS 19 VRRM = 800-1200 V IT RMS = 29 A IT(AV)M = 19 A Phase Control Thyristors VRSM VDSM VRRM VDRM V V 800 1200 800 1200 Type TO-220 AB Type A TO 220 C TO 263 C A G A (TAB) G CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S TO-263 AA C G Symbol Conditions

cs 23-12

Abstract: scr 2308 CS 8-12 10MSA
Contextual Info: , Thyristors SCRs SCR = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all other semiconductor components, they feature the highest current capacity per chip area, espe­ cially at high voltage. They are mainly

CS 8-12

Abstract: CS45-08iol CS630 CS2014 CS30-16 CS30-16iol CS45-16 300-12io3 CS1250 cs 35-12
Contextual Info: , Thyristors SCRs Phase Control Thyristors SC R = S ilicon C o ntrolled R ectifier Thyristors are very rugged devices. Compared to all other sem iconductor components, the y feature the highest current capacity per chip area, especially at high voltage. They are mainly used as

T 4512 H diode

Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Contextual Info: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re

rsm ah 16

Contextual Info: □IXYS Advanced Data CS 19 Phase Control Thyristors vRRM =800-1200 v IT RMS = 29 A I = 19 A V RSM V RRM V DSM V DRM V 800 1200 Type Type V TO 220 TO 263 800 1200 CS 19-08ho1 CS 19-12ho1 CS 19-08ho1S CS 19-12ho1S T0-220 AB A (TA B ) TO-263 AA Symbol Test Conditions