CRP 1005 Search Results

Contextual Info: ASP AUSTIN SEMICONDUCTOR, INC. DRAM AS4LC4M4 883C 4 MEG X 4 DRAM 4 MEG x 4 DRAM 3.3V, E D O P A G E M O D E AVAILABLE IN MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 • SMD Planned - 24/28-Pin FEATURES Vcc DQ1 DQ2 WE RÄ5 NC • Industry-standard x4 pinout, timing, functions and

NN5118160

Contextual Info: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS

NN518128

Abstract: nn514405 518128
Contextual Info: NN518128 seríes Fast Page Mode CMOS 128Kx8bit Dynamic RAM NPN>a DESCRIPTION The N N 518128 is a high performance C M OS Dynamic Random Access Memory organized as 131,072 words by 8 bits. The NN 518128 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in

nn514406

Contextual Info: NN514405A / NN514405Bseries EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN)a( DESCRIPTION The NN514405A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405A/B series is fabricated with advanced CMOS technology and designed with innovative design techniques

Contextual Info: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­

nn514260

Contextual Info: NN514260/ NN514260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM -y- DESCRIPTION The NN514260/A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514260/A series is fabricated with advanced CMOS technology and de­

RL10V

Contextual Info: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and

Contextual Info: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative

QML-38535

Abstract: qml38535
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 19 20 21

Contextual Info: AUSTIN SEMICONDUCTOR, INC. AS4C4256 883C 256 X 4 DRAM 256K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION SMD 5962-90617 MIL-STD-883 PIN ASSIGNMENT Top View 20-Pin LCC FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL

Contextual Info: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast Page

MT4C1024

Abstract: MT4C1024-8
Contextual Info: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32S SERIES 4 M-W ORD BY 32-BIT DYNAMIC RAM MODULE SO D IM M FAST PAGE MODE Description The MC-42S4000LAB32S series is a 4,194,304 w ords by 32 bits dynam ic RAM m odule (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /ÎPD42S17800L are assembled.

TAA 691

Contextual Info: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000A32BA, 422000A32FA 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C -4 2 2 0 0 0 A 3 2 B A , 4 2 2 0 0 0 A 3 2 F A a re 2 ,0 9 7 ,1 5 2 w o r d s b y 32 b its d y n a m ic R A M m o d u le o n w h ic h 4

Contextual Info: SIEMENS 3.3V 1M X 64-Bit EDO-DRAM Module 3.3V 1M X 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60/-70 HYM72V1005GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: SIEMENS 3.3V DRAM Modules HYM64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

scl 1444

Abstract: v 4005
Contextual Info: 3.3V DRAM Modules HYM64Vx005GC L -60 144 pin SO-DIMM EDO-DRAM Modules Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique • One bank 1M x 64, 2M x 64, 4M x 64 and 8M x 64 non-parity module organisations

qml-38535

Abstract: 54BCT245 SMD loub
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: AMD £ 1 R E V IS IO N S LTR DATE YR-MO-DA DESCRIPTION AiUml /Vrhpniir. «'*<|ua t i on tnr unbiased hake under marqin test K f ' l m a A, back end iM r q in te st step i. C orr ec te d m i l i t a r y ¡;fjr-t numbers for d evi ce types 01 ana 0 2 , Technical channes

SMJ55161-80GBM

Abstract: SMJ55161-75HKCM SQ1D 5962-94549 QML-38535 sq10 amplifier smd 5Gs 5962-9454901MXA 5962-9454903QYC SMJ55161-70HKCM
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R167-96. 96-07-01 M. A. Frye Changes in accordance with NOR 5962-R126-97. 96-11-19 M. A. Frye Add device type 03. Add vendor CAGE 01295 as source of supply for device type 03. Update boilerplate. Editorial changes throughout.

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY