CR11206T0100J Search Results

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard 10 Ω - 200 Ω available Top View Resistive Area A Overcoat • Resistive Tolerance: ±2%, ±5% standard • Operating Temp Range: -55 to +150˚C

CR12525T0100J

Abstract: CR11005T0100J CR11206T0100J CR13737T0100J CR12010T0100J
Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's

Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C

CR13737T0100J

Abstract: CR11206T0100J CR11005T0100J
Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's

Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 10 to 200 Ω available. Top View Resistive Area A Overcoat • Resistive Tolerance: ±5% Standard 2% Available .

CR11206T0100J

Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

CR11005T0100J

Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C