CR11206T0100J Search Results
CR11206T0100J Price and Stock
Kyocera AVX Components CR11206T0100JTRHIGH POWER RF RESISTIVE - Custom Tape W/Leader (Alt: CR11206T0100JTR) | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CR11206T0100JTR | Tape w/Leader | 20 Weeks | 1,000 | 
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Buy Now | |||||
 
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CR11206T0100JTR | 449 | 
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Buy Now | |||||||
Kyocera AVX Components CR11206T0100JBKHIGH POWER RF RESISTIVE - Trays (Alt: CR11206T0100JBK) | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CR11206T0100JBK | Tray | 20 Weeks | 50 | 
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Buy Now | |||||
 
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CR11206T0100JBK | 1 | 
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CR11206T0100J Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 
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PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 | |
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 Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard 10 Ω - 200 Ω available Top View Resistive Area A Overcoat • Resistive Tolerance: ±2%, ±5% standard • Operating Temp Range: -55 to +150˚C  | 
 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J 1000-hr. Mil-PRF-55342. | |
CR12525T0100J
Abstract: CR11005T0100J CR11206T0100J CR13737T0100J CR12010T0100J 
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 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J CR13737T0100J | |
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 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's  | 
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PTFC260202FC PTFC260202FC 10-watt H-37248-4 | |
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 Contextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C  | 
 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J | |
CR13737T0100J
Abstract: CR11206T0100J CR11005T0100J 
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 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J CR13737T0100J | |
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 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's  | 
 Original  | 
PTFC260202FC PTFC260202FC 10-watt H-37248-4 | |
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 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's  | 
 Original  | 
PTFC260202FC PTFC260202FC 10-watt H-37248-4 | |
| 
 Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 10 to 200 Ω available. Top View Resistive Area A Overcoat • Resistive Tolerance: ±5% Standard 2% Available .  | 
 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J 120er 1000-hr. | |
CR11206T0100JContextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C  | 
 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J | |
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 Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's  | 
 Original  | 
PTFC210202FC PTFC210202FC 10-watt | |
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 Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's  | 
 Original  | 
PTFC210202FC PTFC210202FC 10-watt | |
CR11005T0100JContextual Info: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C  | 
 Original  | 
MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J |