CQY 40 Search Results

Siebensegmentanzeige

Abstract: cqy 17 CQY91A CQY 84 common kathode 7-segment CQY 65 CQY91K siebensegment cqy91 cqy92A
Contextual Info: « H CQY 91 A • CQY 91 K CQY 92 A • CQY 92 K CQY 93 A • CQY 93 K » 'W Rot-, grün- und gelbleuchtende Sieben-Segment-Anzeigen GaAsP und GaP Red, green and yellow Light Emitting Seven Segment Displays (GaAsP and GaP) Anwendung: Allgemeine Anzeigezwecke

cqy 35 n

Abstract: CQY34 cqy34b TFK 925 TFK BPW 41 N CQY 65 cqy35 TFK 4 314 Fotodiode TFK BPW 20
Contextual Info: CQY 33 • CQY 34 • CQY 35 'W Galliumarsenid-Lumineszenzdioden GaAs Infrared Em itting Diodes Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: • Hermetisches Gehäuse Features:

CQY86

Abstract: cqy 77 CQY 65 CQY87 V178P V179P V180P 2094V
Contextual Info: A CQY 85 • CQY 86 • CQY 87 V 1 7 8 P - V 1 7 9 P - V180P « n » 'W Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke Application: General indicating purposes

cqy 17

Abstract: CQY 65 7718 cqy 89 cqy 89 a CQY75 CQY 40
Contextual Info: CQY 41 • CQY 73 • CQY 75 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: A llgem eine Anzeigezwecke Application: General indicating purposes Besondere Merkmale: • M iniatur-Kunststoffgehäuse

CQY74

Abstract: CQY40L CQY 40 CQY74L cqy 81 CQY 65 CQY 84 cqy 77 cqy40 Anzeige
Contextual Info: « "w CQY 4 0 L • CQY 72 L • CQY 74 L V 168 P • V 169 P V170P I 1 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke A p p lic a tio n : General indicating purposes

IR diodes TFK 4 245

Abstract: TFK 751 IR diodes TFK 4 940 TFK 940 IR diodes TFK 4 7313 28 pin TFK 925 TFK diodes CQY 65 TFK diodes application
Contextual Info: CQY 36 • CQY 37 Galiliumarsenid-Lumineszenzdioden Ga>4s Infrared Emitting Diodes Anw endung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere M erkm ale: Features: • Kunststoff-M iniaturgehäuse

CQY 65

Abstract: CQY 38 Scans-0010326 910nm
Contextual Info: CQY 31 • CQY 32 'W Galliumarsenid-Lummeszenzdioden GaAs Infrared Emitting Diodes Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: • Hermetisches Gehäuse Features: • Herm etically sealed case

TFK 940

Abstract: TFK BPW 75 IR diodes TFK 4 245 TFK 925 cqy 17 IR diodes TFK 4 BPW 64 TFK BPW 14 C TFK BPW 20 diode tfk
Contextual Info: CQY 3 6 /9 • CQY 37/9 Neunteilige Galliumarsenid-Lumineszenzdiodenzeilen 9 Element GaAs Infrared Emitting Diodes Arrays Anwendung: Strahlungsquelle im nahen Infrarot-Bereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers

DIN 50014

Abstract: tfk 248 CQY 248 CQY42 CQY 65
Contextual Info: . « I l » CQY 42 Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: Detektor : GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, Rückwirkungsfreier Schalter

tfk 731

Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
Contextual Info: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens

TFK BPW 75

Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Contextual Info: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:

LP 8029

Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Contextual Info: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.

LP 8029

Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Contextual Info: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.

cqy 17

Abstract: infrared diodes
Contextual Info: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1” inch matrix.

Contextual Info: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”

cqy 17

Abstract: INFRARED DIODES CQY 40 IR array
Contextual Info: These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow

cqy 17

Abstract: infrared emitters and detectors opto coupler array DATASHEET npn tr array
Contextual Info: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flatlensed or narrow angle components. All leads fit an 0.1” inch matrix.

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

pair of led and photo transistor

Abstract: INFRARED DIODES CQY EMITTER
Contextual Info: These components are RoHS compliant SSA-005E&S Miniature IR Array Pb SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is

Contextual Info: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: S tandoff C Dim. B 1.40 4.65 3.15 B.4Q •3.50 6.75 5.55 B.ao Dim. D Total A 16.15 19.15 17.90 20.90 18.25 21.25 20.30 23.30 2 -5 4 .2 0 -8 $ T E C H N IC A L C H A R A C T E R IS T IC S 1 General Characteristics Dimensions: 62.OOLx 4Q.OOW x 19.15H mm 62 COL x 40.00W x 20.90H r m

DIN 50014

Abstract: CQY80
Contextual Info: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :