CQX 13 Search Results
CQX 13 Datasheets Context Search
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CQX 13
Abstract: CQX26 CQX27 FMQ2 JV13 CQX25
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Contextual Info: Datasheet NVISION Compact CQX 3G/HD/SD Router with Clean and Quiet Switching Audio/video routing innovations that simplify your workflows. The NVISION Compact CQX is a 16x8 router which offers clean and quiet outputs for performing seamless video and audio transitions. The CQX |
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CP1602-CQX GVB-1-0239A-EN-DS | |
CQX35
Abstract: CQX37 CQX37A 77206 CQX36 Scans-0010326 CQX 35 Anzeige V135PL
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CQX19
Abstract: 7910E
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CQX19 D-74025 7910E | |
LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
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smd transistor nm
Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
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Telefunken diode color code
Abstract: TDSG5160 telefunken led display
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TDSG5160 TLHR5401AS12. Telefunken diode color code TDSG5160 telefunken led display | |
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Contextual Info: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes |
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DM2200EDRAM 256-byte | |
CQ 945
Abstract: CQ12B CQ22B CD50A HP4192A ISO-14001 TS-16949 2x70mH
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ISO-9001 TS-16949 ISO-14001 J-STD-020C 42Vac 50/60Hz) 80Vdc IEC68-1 CQ 945 CQ12B CQ22B CD50A HP4192A 2x70mH | |
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Contextual Info: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes |
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DM2200 256-byte | |
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Contextual Info: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM ^ p M T R O N Preliminary Datasheet Features I On-Chip Cache Hit/Miss Comparator I Transparent DRAM Refresh During Cache Reads I Hidden DRAM Precharge During Cache Reads I Refresh Counter with Dedicated Path to DRAM Array |
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DM2200EDRAM 15nsec 35nsec 2200J | |
RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
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Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. |
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CQX48 CQX48 BPW78 BPW78 D-74025 16-Nov-99 | |
CQX 88Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. |
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CQX48 CQX48 BPW78 BPW78 D-74025 20-May-99 CQX 88 | |
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Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. |
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CQX48 CQX48 BPW78 BPW78 08-Apr-05 | |
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Contextual Info: SONY CXK58257ATM/AYM -12LB 32768-word x 8-bit High Speed CM OS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low |
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CXK58257ATM/AYM -12LB 32768-word K58257ATM CXK58257AYM CXK58257ATM: CXK58257AYM: 240ns 120ns | |
motorola surface mount marking code data book
Abstract: motorola surface mount marking code MSB710 MSB710-QT1 MSB710-RT1 SMD310 motorola marking code 021
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MSB710 MSB710-QT1 MSB710-RT1* MSB710-QT1/D* motorola surface mount marking code data book motorola surface mount marking code MSB710-QT1 MSB710-RT1 SMD310 motorola marking code 021 | |
DM2202Contextual Info: Enhanced 10ns EDRAMProductAddendum Memory Systems Inc. preliminary Features • SRAM Cache Memory for 10ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 25ns Access to Any New Page ■ Write Posting Register for 10ns Random Writes and Burst Writes |
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100MHz DM2202 | |
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Contextual Info: Temic U2791B TELEFUNKEN Semiconductors 100-MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from |
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U2791B 100-MHz U2791B SSO-20 D-74025 | |
AD620
Abstract: U2794B ad620 filter st 9919 9842
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U2794B U2794B D-74025 AD620 ad620 filter st 9919 9842 | |
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Contextual Info: D S1020 PRELIMINARY DS1020 DALLAS Program m able 8-B it Silicon Delay Line SEMICONDUCTOR PIN ASSIGNMENT FEATURES • All-silicon time delay ,M[ 1 • Models with 0.25 ns, 0.5 ns, 1 ns, and 2 ns steps • Programmable using 3-wire serial port or 8-bit parallel |
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S1020 DS1020 16-pin DS1020 | |
write-verify
Abstract: DM2200J
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256-byte DM2200J write-verify | |
pin diagram of IC 9976
Abstract: ad620 filter AD620 U2791B U2791B-FS ST 9841
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U2791B U2791B D-74025 pin diagram of IC 9976 ad620 filter AD620 U2791B-FS ST 9841 | |
pin diagram of IC 9976
Abstract: AD620 U2791B U2791B-FS ST 9841
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U2791B U2791B D-74025 pin diagram of IC 9976 AD620 U2791B-FS ST 9841 | |