CQV 89 Search Results

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

CQX 86

Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Contextual Info: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

A09t

Abstract: CQX 89
Contextual Info: DM2223/2233 Multibank Burst EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within

SP 8666 B

Contextual Info: EMI Noise Suppression • Data and Signal Line Filters • Common Mode Interface Chokes • nt magnetics nuvotem Current Compensated EMI Noise Suppression Chokes Sales & Marketing, Design and Manufacturing Facilities http://www.talema-nuvotem.com Eastern Europe &

Contextual Info: EMI Noise Suppression • Data and Signal Line Filters • nt Common Mode Interface Chokes • magnetics nuvotem Current Compensated EMI Noise Suppression Chokes Sales & Marketing, Design and Manufacturing Facilities http://www.talema-nuvotem.com Eastern Europe &

Contextual Info: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: HYM72V32636T8 32Mx64, 32Mx8 based, PC 133 DESCRIPTION The H Y M 72V 32636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CM O S Synchronous DRAM s in 400mi! 54pin TS O P-II package, one 2Kbit EEPR O M in Spin TS S O P package on a 168pin glass-epoxy printed

lm 7914

Abstract: inductor 573 08 0670
Contextual Info: nt magnetics nuvotem Inductors and Transformers For Your Power Magnetic Requirements Germany: Int.+4989-841 00-0 • Ireland: Int.+35 374 - 954 8666 • Czech Rep: Int.+420 377 - 338 351 • India: Int.+91 427 - 244 1325 http://www.talema-nuvotem.com • •

inductor 573 08 0670

Abstract: CA051
Contextual Info: nt magnetics nuvotem Inductors and Transformers For Your Power Magnetic Requirements Germany: Int.+4989-841 00-0 • Ireland: Int.+35 374 - 954 8666 • Czech Rep: Int.+420 377 - 338 351 • India: Int.+91 427 - 244 1325 http://www.talema-nuvotem.com • •

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Advance Information IDT71P72204 IDT71P72104 IDT71P72804 IDT71P72604 18Mb Pipelined QDR II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description The IDT QDRIITM Burst of two SRAMs are high-speed synchronous memories with independent, double-data-rate DDR , read and write

IDT71P72104

Abstract: IDT71P72204 IDT71P72604 IDT71P72804
Contextual Info: Advance Information IDT71P72204 IDT71P72104 IDT71P72804 IDT71P72604 18Mb Pipelined QDR II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description The IDT QDRIITM Burst of two SRAMs are high-speed synchronous memories with independent, double-data-rate DDR , read and write

P 6431

Abstract: IDT71P73104 IDT71P73204 IDT71P73604 IDT71P73804 ir tk 69 4410b 7326P
Contextual Info: Advance Information IDT71P73204 IDT71P73104 IDT71P73804 IDT71P73604 18Mb Pipelined DDR II SRAM Burst of 4 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 18Mb Density 2Mx8, 2Mx9, 1Mx18, 512Kx36 Common Read and Write Data Port Dual Echo Clock Output

X3100

Contextual Info: A p p l i c a t io n N o t e A V A I L A B L E \ 3 or 4 Cell Li-Ion BATTERY PACKS P relim in ary Inform ation XI €01 X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times

ALCATEL 2840

Abstract: WK 6052 CUJ-XXX-16B Centillium Communications TNETE100A
Contextual Info: nt magnetics nuvotem Magnetic Components for Communications and Data Line Technology Sales & Marketing, Design and Manufacturing Facilities http://www.talema-nuvotem.com Eastern Europe & Czech Republic NT MAGNETICS s.r.o. Chebská 27 322 00 Plzeñ Tel: Int. + 420 377 - 338 351

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t