CQ 545 Search Results

Contextual Info: ' Ili A « Il » r .18 « - - vi - - •- rxt |N *•»' 6 | ; i. .1 •. 1 •. . • « 1 5 6 [3.96] ITY P I .0 4 5 SO. [4.6] • *+ [1.14] .CQ [2.0] 1 r .45 [>1.4] PIN- ♦ I — .48 [12.2] REF. . 0 7 5 / . 0 7 0 01 A. (!.03/1.78 I Î . 13 [3 . 3] -0 c / / d

Contextual Info: Systems in Silicon Contact Information: Wind River Systems, Inc. Corporate Headquarters, 510-748-4100 or 800-545-WIND 1010 Atlantic Avenue Alameda, California 94501 FAX: 510 749-2010 E-mail: inquiries@wrs.com URL: www.wrs.com AMD Embedded Processor Division, FusionE86 Support

04nS

Abstract: cq 545 72MBIT
Contextual Info: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an

Contextual Info: 72Mbit DDR ESRAM 2Mx36 Preliminary Datasheet Features • • • • • • • • • • • Description 72Mbit Density 300 MHz Clock Rate, 600Mbps Data Rate Low Latency Cached DRAM Architecture Pin Selectable Read/Write Latency Burst Length of Eight

cq 545

Contextual Info: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an

HM66AQB18204

Abstract: HM66AQB36104 HM66AQB36104BP-30 HM66AQB36104BP-33 HM66AQB36104BP-40 HM66AQB9404 of 8404
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

MT57W2MH8B

Abstract: MT57W512H36B MT57W1MH18B
Contextual Info: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B Features • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

BW35

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J Features • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365

micron sram

Abstract: G38-87 MT54W1MH18J MT54W2MH8J MT54W512H36J
Contextual Info: 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 18Mb QDR II SRAM 4-WORD BURST MT54W2MH8J MT54W1MH18J MT54W512H36J Features • DLL circuitry for accurate output data placement • Separate independent read and write data ports with concurrent transactions

HM66AEB18202

Abstract: HM66AEB36102 HM66AEB36102BP-30 HM66AEB36102BP-33 HM66AEB36102BP-40 HM66AEB36102BP-50 HM66AEB36102BP-60 HM66AEB9402
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HM66AEB18202

Abstract: HM66AEB36102 HM66AEB36102BP-30 HM66AEB36102BP-33 HM66AEB36102BP-40 HM66AEB36102BP-50 HM66AEB9402
Contextual Info: HM66AEB36102/HM66AEB18202 HM66AEB9402 36-Mbit DDR II SRAM 2-word Burst REJ03C0046-0001Z Previous ADE-203-1365 (Z Rev. 0.0) Preliminary Rev.0.01 Apr.28.2004 Description The HM66AEB36102 is a 1,048,576-word by 36-bit, the HM66AEB18202 is a 2,097,152-word by 18-bit,

renesas catalogue

Contextual Info: HM66AEB36105/HM66AEB18205 HM66AEB9405 36-Mbit DDR II SRAM Separate I/O 2-word Burst REJ03C0047-0100 Rev.1.00 Sep.06.2006 Description The HM66AEB36105 is a 1,048,576-word by 36-bit, the HM66AEB18205 is a 2,097,152-word by 18-bit, and the HM66AEB9405 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated with advanced

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365

Contextual Info: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B Features • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, DDRIIb2 SRAM 36Mb DDRII CIO SRAM 2-WORD BURST MT57W4MH8B MT57W4MH9B MT57W2MH18B MT57W1MH36B Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA

Contextual Info: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C Features • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

micron sram

Abstract: G38-87 MT57W1MH18C MT57W2MH8C MT57W512H36C
Contextual Info: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C Features • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, DDR SIO SRAM 36Mb DDR SIO SRAM 2-WORD BURST MT57W4MH8C MT57W4MH9C MT57W2MH18C MT57W1MH36C Features • • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J Features Figure 1: 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with

IR diode D4-D4

Abstract: HM66AEB18205 HM66AEB36105 HM66AEB36105BP-30 HM66AEB36105BP-33 HM66AEB36105BP-40 HM66AEB36105BP-50 HM66AEB9405
Contextual Info: HM66AEB36105/HM66AEB18205 HM66AEB9405 36-Mbit DDR II SRAM Separate I/O 2-word Burst REJ03C0047-0001Z Previous ADE-203-1366 (Z Rev. 0.0) Preliminary Rev.0.01 Apr.28.2004 Description The HM66AEB36105 is a 1,048,576-word by 36-bit, the HM66AEB18205 is a 2,097,152-word by 18-bit,

renesas catalogue

Contextual Info: HM66AEB36102/HM66AEB18202 HM66AEB9402 36-Mbit DDR II SRAM 2-word Burst REJ03C0046-0100 Rev.1.00 Aug.28.2006 Description The HM66AEB36102 is a 1,048,576-word by 36-bit, the HM66AEB18202 is a 2,097,152-word by 18-bit, and the HM66AEB9402 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated with advanced

NOTES

Abstract: HM66AQB18204 HM66AQB36104 HM66AQB36104BP-30 HM66AQB36104BP-33 HM66AQB36104BP-40 HM66AQB36104BP-50 HM66AQB9404
Contextual Info: HM66AQB36104/HM66AQB18204 HM66AQB9404 TM 36-Mbit QDR II SRAM 4-word Burst REJ03C0048-0003Z Previous ADE-203-1331B (Z Rev. 0.2) Preliminary Rev.0.03 Mar.31.2004 Description The HM66AQB36104 is a 1,048,576-word by 36-bit, the HM66AQB18204 is a 2,097,152-word by 18-bit,

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365