CQ 148 Search Results

82C9001A

Abstract: 82C9001
Contextual Info: •■ • • a • • •• •••« •• U M M .fv — > Pinouts Pinouts 15 u>2u r>N Q J ^ Uco><l_4gqr-.jjvou- ;^.cnfvl ^ ,c>t^ volor).roQ U J j r t o s H « y> £<->feS C y >*>•>*>>*'>*><-><->u U UZ y 8 UUy y Ur-no^-r<-.<n~o<J£2j i ? y X a. X 8 CQ X CQ CQ 03 CO CO CQ CQ CQ 03 05 CQ CQ O > « CD CQ Ci ö CQ CLa. D. Q. Cl. Cl a. a, a. 33 QQ > >

CQX 86

Abstract: SD-50 diode CQX10 V146P SD-50 Diode application CQX11 CQX12 V147P V148P
Contextual Info: CQX10 • CQ X11 • CQ X12 V 146 P • V 147 P • V 148 P Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Leuchtskalen, allgem eine Anzeigezwecke Application: Scales and general indicating purposes

CQS24050-28

Contextual Info: Ordering information DC-DC Converters Power Module type CQS CQ 1 S 2 48 3 018 4 R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT CQS24033-40 132.0 3.3V 40A CQS24050-28 140.0 5V 28A CQS24120-12 144.0 12V 12A -50 -O 5 6 1Series name 2Single output 3Input voltage 24:DC18 - 36V

cqs24150-8

Abstract: CQS48120 CQS48120-14 06RC
Contextual Info: Ordering information DC-DC Converters Power Module type CQS CQ 1 S 2 48 3 018 4 R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT CQS24033-40 132.0 3.3V 40A CQS24050-28 140.0 5V 28A CQS24120-12 144.0 12V 12A -50 -O 5 6 1Series name 2Single output 3Input voltage 24:DC18 - 36V

Contextual Info: Q a v a n tek GPD-1001/1061 Thin-Film Cascadable Amplifier Module 5 to 1000 MHz TYPICAL PERFORMANCE OVER TEMPERATURE flO "O 00 13 ^ •o @ +15 VDC unless otherwise noted Noise Figure Gain ' _•*" Power Output E ' 2 c * 6 £" c3>58 s h È !, — CQ |«

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER FEATURES UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE CQ •o TAPE AND REEL PACKAGING OPTION AVAILABLE

NE67483

Abstract: 1595S
Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm

2N1482

Abstract: 2N1479 GG1C
Contextual Info: i ~ 3 3 -Q 5 - cq Power Transistors 2N1479, 2N1480, 2N1481, 2N1482 HARRI S S E M I C O N D S E C T O R File Number 27E D • 43D2271 135 G G 1 C1772 T ■ HAS Silicon N-P-N Power Transistors G e n e ra l-P u rp o s e T yp e s fo r M e d iu m -P o w e r A p p lic a tio n s

TYN 208 equivalent

Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Contextual Info: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

N20E

Abstract: hvr-ix N20J P19C MA689 N19E 1S2277 507C MA643 MA690
Contextual Info: 751 7S1 751 19B 19B 503D 486D 486D 486D 486D 486D 486D S io o t Ó ì o 486D S S i% £ S 486D co CO CO O* OS 649 485E 22 1485E 507C ¡504F 507C 140F 140F 140 F 140F 3^ ìf Sr f p s PÜ <c <c «c G as o s a i s •W o P g U .U .U . H£B£BE G w w £ft hiU w

MD12N1

Abstract: N20J 1S2277 507C MA643 MA690 MA691 MD-8H10 md 2102
Contextual Info: 751 7S1 751 19B 19B 503D 486D 486D 486D 486D 486D 486D S io o t Ó ì o 486D S S i% £ S 486D co CO CO O* OS 649 485E 22 1485E 507C ¡504F 507C 140F 140F 140 F 140F 3^ ìf Sr f p s PÜ <c <c «c G as o s a i s •W o P g U .U .U . H£B£BE G w w £ft hiU w

hyperlynx

Abstract: AN4065 AN4065 001-15486 Rev. B Design Guide IN3663 AN4246
Contextual Info: QDR -II, QDR-II+, DDR-II, and DDR-II+ Design Guide AN4065 Author: Vipul Badoni Associated Project: No Associated Application Notes: None Introduction Cypress Quad Data Rate QDR-IIQDR-II+, DDR-II, and DDR-II+ SRAMs address the high-bandwidth requirements

IU22

Abstract: CQ13 AN2424 MPC750 MPC7410 MPC7450
Contextual Info: Freescale Semiconductor, Inc. AN2424/D Rev. 0, 12/2002 Freescale Semiconductor, Inc. MPC7410 and MPC7450: Comparison and Compatibility Raiyan T. Zaman CPD Applications The primary objective of this application note is to describe the differences in functional

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

HFA1105

Abstract: HFA1106 HFA1106IB HFA1106IP HFA11XXEVAL 1106 op amp
Contextual Info: HFA1106 Semiconductor September 1998 315MHz, Low Power, Video Operational Amplifier with Compensation Pin ^ .G ° Features Description • Com pensation Pin for Bandwidth Limiting The HFA1106 is a high speed, low power current feedback operational amplifier built with Harris’ proprietary com ple­

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

Contextual Info: INDEX OF DEARBORN TYPE CAPACITORS DEARBORN INDEX OF DEARBORN TYPE CAPACITORS D e arb orn Type D ie le c tric T e m p e ra tu re Cap R a n g e V o lta g e R a n g e R ang e HF W VDC Page WRAP-AND-FILL METALIZED FILM CAPACITORS 50 600 16 2000 10000 21 1 0.0

Contextual Info: Preliminary GS8672D19/37BE-400/375/333/300 72Mb SigmaQuadTM-II+ 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.5 V I/O Burst of 4 ECCRAMTM Features Clocking and Addressing Schemes • 2.0 Clock Latency • On-Chip ECC with virtually zero SER

Contextual Info: Preliminary GS8672D19/37BE-400/375/333/300 72Mb SigmaQuadTM-II+ 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.5 V I/O Burst of 4 ECCRAMTM Features Clocking and Addressing Schemes • 2.0 Clock Latency • On-Chip ECC with virtually zero SER

Contextual Info: GS8672Q19/37BE-450/400/375/333/300 72Mb SigmaQuadTM-II+ 165-Bump BGA Commercial Temp Industrial Temp 450 MHz–300 MHz 1.8 V VDD 1.5 V I/O Burst of 2 ECCRAMTM Features Clocking and Addressing Schemes • 2.0 Clock Latency • On-Chip ECC with virtually zero SER

Contextual Info: Preliminary GS8672Q19/37BE-400/375/333/300 72Mb SigmaQuadTM-II+ 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.5 V I/O Burst of 2 ECCRAMTM Features Clocking and Addressing Schemes • 2.0 Clock Latency • On-Chip ECC with virtually zero SER

AN1021

Contextual Info: Preliminary GS8672D19/37BE-400/375/333/300 72Mb SigmaQuadTM-II+ 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.5 V I/O Burst of 4 ECCRAMTM Features Clocking and Addressing Schemes • 2.0 Clock Latency • On-Chip ECC with virtually zero SER