CPD71 Search Results

CMPD6001

Abstract: CPD71
Contextual Info: PROCESS CPD71 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 15,000Å Back Side Metalization

CPA4

Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Contextual Info: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5

CSI021

Abstract: cm15 jv capacitor LT 5216 153 SP-J BV EI 301 0546 fl016 052416 dm 0565 TA3M 100P6S-A
Contextual Info: <* ^>0^ Tentative Specifications REV.A ^ _ . . r . e s c r ip tio n . Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M 3 0 2 1 8 G r O lip SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

Contextual Info: Typical Electrical Characteristic Curves Page Page Characteristic Curve Index . . CP108 . . CP117 . . CP147 . .