CP44 Search Results
CP44 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CP4/4 | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP44A | Essentra Components | CENTER PULL-TAB PLUG - 29.2 MM | Original | 4.78MB | |||
| CP4/4/BL | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP4/4/BU | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP4/4/G | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP-44H | Centronic | Silicon Planar Photodiode | Scan | 103.94KB | 2 | ||
| CP4/4/O | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP4/4/R | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP4/4/W | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB | |||
| CP4/4/Y | Altech | DIN TERM BLK, PUSH-IN, 4 CONN | Original | 1.25MB |
CP44 Price and Stock
IDEC Corporation SCP44SOLAR PANEL FOR P44 |
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SCP44 |
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SCP44 | Bulk | 1 |
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SCP44 | 1 |
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Microchip Technology Inc MCP4431T-503E/ML50k I2C quad channel Pot 7-bit volatile memory QFN |
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MCP4431T-503E/ML |
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MCP4431T-503E/ML | Tape & Reel | 13 Weeks | 3,300 |
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MCP4431T-503E/ML | Tape & Reel | 3,300 |
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MCP4431T-503E/ML | 7 Weeks | 3,300 |
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MCP4431T-503E/ML | 6 Weeks | 3,300 |
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TE Connectivity SMA-Q0102BTCP44K2MELF SMA-Q 44K2 0.1% 25PPM 0102 0.2W MOQ Reduction |
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Microchip Technology Inc MCP4461T-103E/STDigital Potentiometer - 10kOhm - 256 Position - Non-Volatile Linear - Automotive - 20-Pin TSSOP - Tape&Reel |
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MCP4461T-103E/ST |
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MCP4461T-103E/ST | Tape & Reel | 9 Weeks | 2,500 |
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MCP4461T-103E/ST | Tape & Reel | 2,500 |
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MCP4461T-103E/ST | Bulk | 52 Weeks | 2,500 |
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MCP4461T-103E/ST | 17 Weeks | 2,500 |
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MCP4461T-103E/ST | 16 Weeks | 2,500 |
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Microchip Technology Inc MCP4441-103E/MLDigital Potentiometer - 10kOhm - 128 Position - Non-Volatile Linear - Automotive - 20-Pin QFN EP - Tube |
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MCP4441-103E/ML |
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MCP4441-103E/ML | Tube | 7 Weeks | 273 |
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MCP4441-103E/ML | Bulk | 250 |
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MCP4441-103E/ML | Bulk | 19 Weeks | 273 |
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MCP4441-103E/ML | 17 Weeks | 91 |
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MCP4441-103E/ML | 16 Weeks | 91 |
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CP44 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HN27C4096CP
Abstract: HN27C4096CP-12 HN27C4096CP-15 Hitachi DSA00109
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Original |
hn27c4096cp262144-word16-bit44-pin+3 | |
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Contextual Info: HN62454BN Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-470A Z Rev. 1.0 May. 21, 1996 Description The HN62454BN is a 262144 words by 16 bits CMOS Mask Programmable ROM, featuring page access mode to get very high speed 4-word serial access. A high speed access of 85/100 ns (max) and page |
OCR Scan |
hn62454bn262144-word16-bitade-203-470a | |
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Contextual Info: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high |
OCR Scan |
hm6216255hi256-kword16-bitade-203-1037a+3 | |
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Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword X 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing |
OCR Scan |
hm621664hb65536-word16-bitade-203-349+3 | |
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Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith |
OCR Scan |
hm62w1664hhm62w1864h65536-word16/18-bit+6 | |
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Contextual Info: HN62442B Series 2M 128K x 16-bit Mask ROM • DESCRIPTION The Hitachi HN62442B is a 2-Megabit CMOS Mask Programmable Read Only Memory organized as 131,072 x 16-bit. The low power consumption of this device makes it Ideal for battery powered, portable systems. In addition, the high density and |
OCR Scan |
hn62442b16-bit40-pin44-lead+2 | |
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Contextual Info: HM621664HBI Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-786 A Z Rev. 1.0 May. 19,1997 Description The HM621664HBI is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (20 ns) with employing 0.8 |im CMOS process and high speed circuit designing |
OCR Scan |
hm621664hbi65536-word16-bitade-203-786+3 | |
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Contextual Info: HN62454B Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-471A Z Rev. 1.0 May. 10, 1996 Description The HN62454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 85/100 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits. |
OCR Scan |
hn62454b262144-word16-bitade-203-471a+5 | |
hitachi plcc mask romContextual Info: HN62454BN Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-470A Z Rev. 1.1 Jun. 21,1996 Description The HN62454BN is a 262144 words by 16 bits CMOS Mask Programmable ROM, featuring page access mode to get very high speed 4-word serial access. A high speed access of 85/100 ns (max) and page access of |
OCR Scan |
hn62454bn262144-word16-bitade-203-470a+2 | |
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Contextual Info: HM621664H/HM621864H Series 65536-word x 16/18-bit High Speed CMOS Static RAM HITACHI Description The HM621664H/HM621864H is an asynchronous high speed static RAM organized as 64-kword x 16/18bit. It realize high speed access time 20/25 ns with employing 0.8 |im CMOS process and high speed circuit |
OCR Scan |
hm621664h/hm621864h65536-word16/18-bit64-kword+3 | |
CCITT recommendation G.721
Abstract: g.721
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OCR Scan |
1803--------------------ahd8180364-kbits/s16-bit+2 | |
HM6216255HI
Abstract: HM6216255HJPI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Hitachi DSA0044
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hm6216255hi256-kword16-bitade-203-1037a+9 | |
HM62W16255HI
Abstract: HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044
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hm62w16255hi256-kword16-bitade-203-1038a+8 | |
HM62W16255H
Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA0044
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hm62w16255h256-kword16-bitade-203-751d+11 | |
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HM621864HB
Abstract: HM621864HBJP-15 HM621864HBJP-20 HM621864HBLJP-15 HM621864HBLJP-20 Hitachi DSA0044
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hm621864hb64-kword18-bitade-203-739a+7 | |
AC500 plc
Abstract: plc projects real time application projects 1SBN260221R1001 AC500 USB to RS232 creation 1SBS260284R1001 plc cable rs232 1SBN260216R1001 CP400 1sbn
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cp400l0201f-69685d-69006+9 | |
32K10K-400
Abstract: CP1005 12ah4 CFD06 IOG20 32k10k400 IOG11 12ah3 12AH-4 32K10K
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330uf32k10k-400cp100512ah4+7 | |
71-P2970-002A
Abstract: CH7107A toshiba dvd hdd schematic diagram hdd schematic c71d 28K1 CM85611 intel g31 msi ca151 lcd C116
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l295p/l297p71-p2970-002ach7107atoshiba dvd hdd schematic diagram+7 | |
1010B
Abstract: colorimeter CP-1010B CP-22C CP-44H CP-55 CENTRONIC INC
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OCR Scan |
g00023fecp-55cp-1010bcp-22c+7 | |
KTH-2071
Abstract: NBS Design
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rg-17488a/ucp-447ktj-103+7 | |
lasl type c-9y19503Contextual Info: REVISIONS GSD ER KH 36944 04/29/96 o ho I 4^ I KAM6584 NOTES: 1. FOR USE WITH LASL TYPE C 9Y19503 CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-441. 3. FOR CRIMPING USE DIE KTH-2001. 4. INTERFACE PER MIL-STD-348, FIG. 314-1. 5. MATERIALS: INSULATOR: REXOUTE, L-P -5 1 6 |
OCR Scan |
kam65849y19503cp-441kth-2001+6 | |
HX8340B
Abstract: HX8340-B mx 362-0
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hx8340-b176rgb224october225october+2 | |
IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
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ic51-128transistor fpq 630pc-68ttp-48df+6 | |
HM6216255CTTI12Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed |
Original |
hm6216255hci256-kword16-bitade-203-1305a+4 | |