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Catalog Datasheet	Type	Document Tags	PDF
cmlt3820g Abstract: CMPT3820 CXT3820 TRANSISTOR 536 Contextual Info: PROCESS CP382X Small Signal Transistor NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization	Original	cp382x cmlt3820g cmpt3820 cxt3820 +1transistor 536	PDF

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cmlt3820g

Abstract: CMPT3820 CXT3820 TRANSISTOR 536
Contextual Info: PROCESS CP382X Small Signal Transistor NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

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cp382x cmlt3820g cmpt3820 cxt3820 +1

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