CORNING INTENSITY MODULATOR Search Results

Contextual Info: NIR-LN 7/06/07 11:39 Page 1 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Package footprint Features dimensions in mm us About 1010011001 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Photline is a young European company who designs and produces integration

MXPE-LN

Abstract: U25-A 85-U25A NIR-MX-LN-10 98-U25A Lithium Niobate Polarization Controller . LIDAR modulators lidar intensity modulator QPSK-LN-40
Contextual Info: NIR-LN 7/06/07 11:39 Page 1 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Package footprint Features dimensions in mm us About 1010011001 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Photline is a young European company who designs and produces integration

corning modulator

Abstract: Lasertron Corning Lasertron electroabsorption modulator corning OC-192 gpo electro-absorption modulator QLM915 SMF28 Corning CCH-CP12-59-P03RJ
Contextual Info: QLM915 10Gb/s Electro-Absorption Modulated Laser EML Corning Lasertron • Electro-Absorption Modulator integrated with CW Laser µm wavelength • 1.5µ • 10Gb/s operation • Wavelength selectable to ITU Grid (C+L band) • Low modulation voltage • Temperature stabilized

MZ 1530

Abstract: MZ-150 analog intensity modulator, LiNbO3 JDS uniphase intensity modulator Mach-Zehnder modulator microwave analog modulator mach zehnder FY-150-009 sma fy connector MZ15 dual electrode mach-zehnder
Contextual Info: Product Bulletin APE Microwave Analog Intensity Modulators 1320 nm and 1550 nm The low loss, high stability and flat response of JDS Uniphase microwave modulators make them the preferred device for this demanding market. JDS Uniphase analog intensity modulators cover

AVANEX MODULATOR 40

Abstract: AVANEX MODULATOR AVANEX MODULATOR SD 40 corning intensity modulator
Contextual Info: PowerBit SD-40 40 Gb/s Intensity Modulator FEATURES • Titanium-Indiffused Waveguides • X-Cut, Single Drive • C- and L-Band Operation Single P/N • Extended Bandwidth for FEC This leading edge 40 Gb/s intensity modulator is a key building block for next

AVANEX MODULATOR

Abstract: AVANEX MODULATOR 40
Contextual Info: PowerBit F-10 10 - 12.5 Gb/s Intensity Modulator with Low Drive Voltage FEATURES • Very Low Drive Voltage • Standard “F”-type Footprint for 4” MSA Avanex intensity modulators are based on the Mach-Zehnder Interferometer architecture. They are manufactured using the highly reliable Titanium indiffusion

Fujikura SM 15 PUV/UV250

Contextual Info: PowerLog AM-20; AM-40 20/40 GHz Intensity Modulators for Analog Applications FEATURES • Titanium In-Diffused Waveguides • X-cut LiNbO3 • Low Drive Voltage Compatible with Commercially Available Drivers • Low Optical Insertion Loss • 1300 nm Wavelength Range on

OC196

Abstract: AVANEX MODULATOR 40 AVANEX MODULATOR avanex electro optic modulator Transponders avanex dispersion SM15P tunable lasers intensity modulator
Contextual Info: PowerBit XS10-0, XS1700, XS2000 10 - 12.5 Gb/s Intensity Modulator Family for 3” MSA Transponders FEATURES • Ultra Small Form Factor for 3” MSA Transponders • Reliable X-Cut LiNbO3 with Titanium Indiffused Waveguides • C- and L-Band Operation single

AVANEX MODULATOR WITH attenuator

Abstract: AVANEX MODULATOR AVANEX MODULATOR 40 SM15P Mach-Zehnder Interferometer l-band 6 bit attenuator avanex avanex pm Mach-Zehnder modulator avanex 40
Contextual Info: PowerBit F10-A, F1700-A, F2000-A 10 - 12.5 Gb/s Intensity Modulators with Attenuator FEATURES • Integrated Voltage Controlled Variable Attenuator • More than 15 dB Attenuation Range • Constant Extinction Ratio over Full Attenuation Range • C and L-Band Operation single

85-U25A

Abstract: U25-A RF connector U25A 800nm
Contextual Info: NIR-MX800-LN-05-PD-P-P INTENSITY MODULATOR SPECIFICATIONS ELECTRICAL NIR-MX800-LN-05 electro-optic bandwidth S21 @-3 dB NIR-MX800-LN-05 Vp RF electrodes @ 50kHz NIR-MX800-LN-05 electrical return loss S11 0-10 GHz

Fujikura panda fiber

Abstract: corning phase modulator
Contextual Info: PowerLog AM-1 PowerLog AM-1 Dual Output Analog Modulator Features: • Ti-Diffused Waveguides • 1550 nm Window • Traveling Wave Electrode Design • Separate Bias Electrode • Dual Output Port, 180° Phase Difference • Enables Low CSO on Both Outputs

corning phase modulator

Abstract: avanex avanex phase SM15P AVANEX MODULATOR Avanex Corporation dual electrode mach-zehnder corning modulator D2802 corning intensity modulator
Contextual Info: PowerLog AM-1 Dual Output Analog Modulator FEATURES • Ti-Diffused Waveguides • 1550 nm Window The Avanex analog modulator is based on a Mach-Zehnder waveguide interferometer and is manufactured using the Titanium indiffusion in x-cut, y-propagating Lithium

Contextual Info: MX-LN series 1550 nm band Intensity Modulators Delivering Modulation Solutions Modulator The MX-LN series are lithium niobate LiNb03 intensity modulators designed for optical communications at data rates up to 44 Gb/s. The X-cut design of this Mach-Zehnder modulators confer them an

NIR-MPX-800-LN-10

Abstract: corning phase modulator RF50 port data NIR-MPX800
Contextual Info: NIR-MPX800 series 800 nm region Phase Modulators Modulator The NIR-MPX800 series are modulators especially designed to operate in the 800 nm wavelength region. They are available with various modulation bandwidth, from low frequency to 10 GHz and above. Features

10020417

Abstract: JDS Uniphase modulator 10020416 JDS uniphase intensity modulator 800S11 100204 corning modulator 1002041 linbo3 modulator 10gb
Contextual Info: Product Bulletin 10 Gb/sec “Bias Ready” Intensity Modulator The 10 Gb/s “Bias Ready” Intensity Modulator is designed for TDM and WDM 10 Gb/s transmission. It features excellent stability in a biased circuit and operates within the 1530 to 1565 nm range.

corning phase modulator

Abstract: Lithium Niobate Polarization Controller optical external modulator Advanced Custom Sensors corning intensity modulator
Contextual Info: 10 Gb/s Phase Modulator OC-192 F E AT U R E S • 1550nm wavelength band (1300nm version available) • Traveling wave electrode design • Low insertion loss • Low residual intensity modulation A P P L I C AT I O N S • • • • • • Polarization scrambler and controller

JDSU Phase modulator

Abstract: JDSU modulator CATV MODULATOR JDS uniphase intensity modulator PHASE-MODULATOR PM JDS Uniphase phase modulator c band modulator JDSU amplitude modulator corning modulator Fujikura SM.15-P-8/125-UV/UV-400
Contextual Info: COMMUNICATIONS COMPONENTS CATV Band Dual Output Modulator Key Features • Flat frequency response • Two optical output ports • Integrated phase modulator • High optical damage threshold Applications • High performance 1550 nm CATV band transmitters

PHASE-MODULATOR PM

Abstract: JDSU Phase modulator JDSU Phase modulator 10023874 Fujikura SM.15-P-8/125-UV/UV-400 JDS Uniphase phase modulator JDSU Modulator JDS uniphase intensity modulator UV diode 250 nm corning modulator PM-150-080
Contextual Info: COMMUNICATIONS COMPONENTS APE Phase Modulators Key Features • 500 MHz and 10 GHz bandwidth options • High optical power operation • Low optical loss • Single-polarization operation • Minimal back reflections Applications • Optical chirping • Coherent communication links

CATV MODULATOR

Abstract: JDS Uniphase phase modulator JDS uniphase intensity modulator JDS Uniphase modulator c band modulator corning phase modulator CA-150-010-1-3-C1 jds modulator 100 corning modulator
Contextual Info: Product Bulletin APE CATV Band Modulator The JDS Uniphase CATV band modulator is widely accepted for use in externally modulated 1550 nm transmitters. Two optical outputs offer flat frequency response and excellent CSO composite second order distortion performance. Rated for

JDSU Phase modulator 10023874

Abstract: JDS Uniphase 10024520
Contextual Info: COMMUNICATIONS COMPONENTS APE Phase Modulators Key Features • 500 MHz and 10 GHz bandwidth options • High optical power operation • Low optical loss • Single-polarization operation • Minimal back reflections Applications • Optical chirping • Coherent communication links

NX8501

Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Contextual Info: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation

oc-192 modulator

Abstract: amplitude modulation applications oc 192 modulator mpi Lithium Niobate Polarization Controller corning phase modulator Mach-Zehnder modulator Fujikura fiber circuit electronic rs232 mpi corning intensity modulator
Contextual Info: MICRO PHOTONIX INTEGRATION OC-192 Modulator T E C H N I C A L S P E C I F I C A T I O N S Applications: • SONET/SDH • DWDM/WDM • Metro Features: • Ti in-diffusion technology • Low drive voltage is compatible with commercially available drivers • Low insertion loss

laser chirp parameter

Abstract: cyoptics CYOPTICS laser LIM400 AC Photonics, modulator JESD625-A laser transmitter 10ghz GR-468-CORE DFB laser drivers GPPO
Contextual Info: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee

nec MONITOR 28 PIN CONNECTOR

Abstract: NX8501 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid