CONTROLLED AVALANCHE SCHOTTKY Search Results

1N5822

Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

DIODE 1N5822

Abstract: marking RAV SOD84A 1N5821 diode schottky 1N5822 n5822 1N58 1N5820 1N5822 diode Philips 370
Contextual Info: Philips Semiconductors M bfc.5 3 ^ 3 1 □ □ E b c1 3 L4 • APX Controlled avalanche Schottky barrier d iod es 1N5820ID/21ID/22ID n D E S C R IP T IO N Schottky barrier d io d es in herm etically se a led S O D 8 4 A Implosion D iode ID envelope, intended for use in low output

BYS 045

Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Contextual Info: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max

BYY 56

Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Contextual Info: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C

Contextual Info: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max

RG4 DIODE

Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Contextual Info: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

IRF6691

Abstract: IRF6691TR1
Contextual Info: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

Contextual Info: PD - 95867B IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

IRF6691

Abstract: IRF6691TR1
Contextual Info: PD - 95867 IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

Contextual Info: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

IRF6691TR1

Abstract: IRF6691
Contextual Info: PD - 95867A IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

Contextual Info: PD - 95867C IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

Contextual Info: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf

STPS5L40

Abstract: STPS5L40RL
Contextual Info: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

STPS5L60

Abstract: STPS5L60RL
Contextual Info: STPS5L60 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 60 V Tj (max) 150°C VF (max) 0.53 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

IRF6794MTRPBF

Abstract: IRF6794M
Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

1N5821

Abstract: 1N5820 1N5822
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP

irf6798MTR1PBF

Abstract: IRF6798MPbF IRF6798MTRPbF
Contextual Info: PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V

IRF6894

Abstract: IRF6894MTR1PBF
Contextual Info: PD - 97633 IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)

Contextual Info: PD - 97770 IRF6892STRPbF IRF6892STR1PbF DirectFET plus MOSFET with Schottky Diode ‚ l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching 

60mH inductor

Abstract: IRF6795MTR1PBF IRF6795MTRPBF
Contextual Info: PD - 97321 IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V

60mH inductor

Abstract: IRF6795MTR1PBF IRF6795MTRPBF
Contextual Info: PD - 97321B IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V