CONTROL DRAIN MOSFET Search Results

offline linear LED driver AC

Abstract: TS19453 400Vdc to 5V DC Regulator TO-252-4L TO252-4L DC DC converter 400V lighting AC DC sop8 mosfet pwm emi ac dc led constant current driver
Contextual Info: Preliminary TS19453 AC/DC Programmable Current WLED Driver w/PWM Dimming Control SOP-8 Pin Definition: 1. Rsense 8. Drain 2. Ground 7. Drain 3. PWMD 6. Drain 4. Vdd 5. Ground TO-252-4L PPAK Pin Definition: 1. Drain 2. Vdd 3. Ground 4. Rsense 5. PWMD General Description

TS19452CS

Abstract: TS19452 "coil capacitance" mosfet triggering circuit ac dc led constant current driver
Contextual Info: TS19452 AC/DC WLED Driver with Internal MOSFET Universal Switch Mode SOP-8 Pin assignment: 1. Drain 8. Ground 2. Drain 7. Ground 3. Drain 6. Ground 4. Vdd 5. Ground General Description The TS19452 is a PWM high efficiency LED driver control IC. It allows efficient operation of LED strings from

NTE2966

Contextual Info: NTE2966 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC-DC Converter Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

NTE2954

Contextual Info: NTE2954 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC–DC Converter Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: NTE2953 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC–DC Converter Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

MG30D1ZM1

Abstract: Mosfet 30A 250V X10V
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D1ZM1 HIGH POWER S WITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Drain is Isolated from Case. . Power MOSFET and 2 Free Wheeling Diodes are Built-in to 1 Package. . Low Drain-Source ON Resistance. : RDS ON =0-125n(Max.)(Iß=30A)

PHM8001

Abstract: phm8
Contextual Info: MOSFET MODULE PHM8001 Single 800A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g

IRF8010

Abstract: IRF1010 AN1001
Contextual Info: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRFB4710

Abstract: 12v 10A dc driver motor control mosfet AN1001 IRFS4710 IRFSL4710
Contextual Info: PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFB4710

Abstract: AN1001 IRFS4710 IRFSL4710
Contextual Info: PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: CMOS IC For Switching Power Supply Control FA3629AV FA3629AV • Dimensions, mm TSSOP-16 9 16 8 1 5.2 0.2±0.05 0~8˚ • Low input voltage: 2.5V to 6.5V • 40V CDMOS Process: Built-in 0.3Ω Nch-Power MOSFET ch1, open drain • 3-channels PWM Control: 2 boost circuits(ch1, ch2), 1 inverting circuit (ch3)

FA3629AV

Abstract: TSSOP-16
Contextual Info: CMOS IC For Switching Power Supply Control FA3629AV FA3629AV • Dimensions, mm TSSOP-16 9 16 8 1 5.2 0.2±0.05 0~8˚ • Low input voltage: 2.5V to 6.5V • 40V CDMOS Process: Built-in 0.3Ω Nch-Power MOSFET ch1, open drain • 3-channels PWM Control: 2 boost circuits(ch1, ch2), 1 inverting circuit (ch3)

AN1001

Abstract: IRF1010 IRF1312 IRF1312L IRF1312S IRF530S IRL3103L marking code 3f
Contextual Info: PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD - 97540 IRF6702M2DTRPbF IRF6702M2DTR1PbF Applications l DirectFET™ Power MOSFET ‚ Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Typical values unless otherwise specified Features VDSS Replaces Two discrete high side MOSFETs Optimized for High Frequency Switching

TK39N60W

Contextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

tk8a60

Contextual Info: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16N60W MOSFETs Silicon N-Channel MOS DTMOS TK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK8Q60W MOSFETs Silicon N-Channel MOS DTMOS TK8Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

TK16A60W

Abstract: TK16
Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

IRFB61N15D

Abstract: AN1001 IRF1010
Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

AN1001

Abstract: IRF1010 IRFB42N20D
Contextual Info: PD- 94208 IRFB42N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 200V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: TK17E65W MOSFETs Silicon N-Channel MOS DTMOS TK17E65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK14E65W MOSFETs Silicon N-Channel MOS DTMOS TK14E65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK35N65W MOSFETs Silicon N-Channel MOS DTMOS TK35N65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching