CONTENT ADDRESSABLE MEMORY LOW POWER Search Results
CONTENT ADDRESSABLE MEMORY LOW POWER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
CONTENT ADDRESSABLE MEMORY LOW POWER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tms 1035
Abstract: TDD 1605 f100145 resistor Mk2 F100142 content addressable memory "content addressable memory" search compare match current voltage
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OCR Scan |
F100142 F100142 tl/f/9857-10 YB15-YB12 YB11-YB8 VB3-Y80 F10014S OB15-OB12 D3-00 F10014S tms 1035 TDD 1605 f100145 resistor Mk2 content addressable memory "content addressable memory" search compare match current voltage | |
a316j
Abstract: tms 374 a-316j ata 450 ws resistor Mk2
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OCR Scan |
F100142 F100K 24-Pin F100145s 16-bit YB15-YB12 Y83-YB0 a316j tms 374 a-316j ata 450 ws resistor Mk2 | |
mk2 resistor
Abstract: resistor Mk2 F100145 M/F100142
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OCR Scan |
F100142 F100K 24-Pin F100145 mk2 resistor resistor Mk2 M/F100142 | |
Contextual Info: Not Intended For New Designs 100142 £3 National A Ü Semiconductor 100142 4 x 4-Bit Content Addressable Memory General Description The 100142 is a 4 word by 4-bit Content Addressable Mem ory CAM . Reading is accomplished when an address se lect input (Ao, A 7 , A 2 , A 3) is LOW and the write strobe input |
OCR Scan |
100145s 16-bit YB15-YB12 YB11-YBB | |
tcam
Abstract: R8A20410BG renesas tcam tcam renesas renesas CAM R8A2041 Xelerated tcam TCAM chip Xelerated ternary content addressable memory
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20Mbit 640-bit 0410/in-house/PF/SP R10PF0001EU0100 tcam R8A20410BG renesas tcam tcam renesas renesas CAM R8A2041 Xelerated tcam TCAM chip Xelerated ternary content addressable memory | |
resistor Mk2Contextual Info: F100142 4 x 4-Bit Content Addressable Memory General Description The F100142 is a 4 w ord by 4-bit C on te n t A ddressable M em ory CAM . Reading is accom plished w hen an address select input (Ao, A 7, ^ A 3) is LOW and th e w rite strobe input (W 3) is HIGH. The corresponding stored w ord appears |
OCR Scan |
F100142 F100145s 16-bit YB15-VB12 YB11-YB* resistor Mk2 | |
netlogic CAM
Abstract: "Content Addressable Memory" Netlogic Content Addressable Memory NetLogic Microsystems Priority Encoder CAM "content addressable memory" search compare 01AEH 0127H 0927H
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NL81480A NL82480A 16-bit I/O15 44-Pin 120ns netlogic CAM "Content Addressable Memory" Netlogic Content Addressable Memory NetLogic Microsystems Priority Encoder CAM "content addressable memory" search compare 01AEH 0127H 0927H | |
content addressable memory low power
Abstract: "Content Addressable Memory"
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75K75150 AN-288 DSC-6075/00 content addressable memory low power "Content Addressable Memory" | |
MCM69C233
Abstract: MPC8260
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MCM69C233WP/D MPC8260 MCM69C233 MCM69C233 | |
ternary content addressable memory VHDL
Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
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STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge | |
SP-353
Abstract: MCM69C433 MPC8260 EMEC SP353
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MCM69C433WP/D MPC8260 MCM69C433 MCM69C433 SP-353 EMEC SP353 | |
Contextual Info: 74AHC259-Q100; 74AHCT259-Q100 8-bit addressable latch Rev. 1 — 22 July 2013 Product data sheet 1. General description The 74AHC259-Q100; 74AHCT259-Q100 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL LSTTL . It is specified in compliance with |
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74AHC259-Q100; 74AHCT259-Q100 74AHCT259-Q100 AHCT259 | |
Contextual Info: 74HC259-Q100; 74HCT259-Q100 8-bit addressable latch Rev. 1 — 30 July 2012 Product data sheet 1. General description The 74HC259-Q100; 74HCT259-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL LSTTL . They are specified in compliance with |
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74HC259-Q100; 74HCT259-Q100 74HCT259-Q100 HCT259 | |
Contextual Info: 74HC259-Q100; 74HCT259-Q100 8-bit addressable latch Rev. 1 — 30 July 2012 Product data sheet 1. General description The 74HC259-Q100; 74HCT259-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL LSTTL . They are specified in compliance with |
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74HC259-Q100; 74HCT259-Q100 74HCT259-Q100 HCT259 | |
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74HCT25Contextual Info: 74HC259; 74HCT259 8-bit addressable latch Rev. 5 — 7 August 2012 Product data sheet 1. General description The 74HC259; 74HCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL LSTTL . They are specified in compliance with JEDEC |
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74HC259; 74HCT259 74HCT259 HCT259 74HCT25 | |
Contextual Info: 74HC259; 74HCT259 8-bit addressable latch Rev. 5 — 7 August 2012 Product data sheet 1. General description The 74HC259; 74HCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL LSTTL . They are specified in compliance with JEDEC |
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74HC259; 74HCT259 74HCT259 HCT259 | |
PCF8544
Abstract: PCF8810 "Philips Semiconductors" "Selection" "Guide" SO8L pcf85163 graphic lcd initialisation PCF2103 PCF8591 for RTC PCF8584 LCD based on I2C
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P82B96 PCF1252-X PCF8591 100kHz DIP16, IC03a PCF8544 PCF8810 "Philips Semiconductors" "Selection" "Guide" SO8L pcf85163 graphic lcd initialisation PCF2103 PCF8591 for RTC PCF8584 LCD based on I2C | |
pci600
Abstract: PT-PCI600-10716 chipset mtbf mic connector pci600 semiconductor diode PT-PCI600 RJ45 SMT Content Addressable Memory SUPERNET AMD Supernet
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PT-PCI600 RJ-45) PCI600 PT-PCI600-10715 PT-PCI600-10716 PT-PCI600-10717 PT-PCI600-10718 PT-PCI600-10719 079A006710 PT-PCI600-10716 chipset mtbf mic connector pci600 semiconductor diode RJ45 SMT Content Addressable Memory SUPERNET AMD Supernet | |
PLM51
Abstract: F800H SAB-C502 2a8h
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SAB-C502 SAB-C502. SAB-C502-2R SAB-C502-L PLM51 F800H 2a8h | |
Contextual Info: 74HC259; 74HCT259 8-bit addressable latch Rev. 03 — 8 January 2009 Product data sheet 1. General description The 74HC259; 74HCT259 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL LSTTL . It is specified in compliance with JEDEC standard |
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74HC259; 74HCT259 74HCT259 HCT259 | |
74AHC259
Abstract: 74AHC259D 74AHC259PW 74AHCT259 74AHCT259D 74AHCT259PW
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74AHC259; 74AHCT259 74AHCT259 AHCT259 74AHC259 74AHC259D 74AHC259PW 74AHCT259D 74AHCT259PW | |
Xtensa
Abstract: IEEE 802.11n g.722.2 G.711.1 dsp echo pitch Atlanta-100 dsp based echo cancellation RMII to WLAN Gigabit Ethernet PHY fbga Tensilica
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Contextual Info: 74AHC259; 74AHCT259 8-bit addressable latch Rev. 02 — 15 May 2008 Product data sheet 1. General description The 74AHC259; 74AHCT259 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL LSTTL . It is specified in compliance with JEDEC standard |
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74AHC259; 74AHCT259 74AHCT259 AHCT259 | |
SJA1000 application note
Abstract: 80C51 SJA1000 Philips SJA1000 standalone CAN of the Philips SJA1000 standalone CAN c P8xC591
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P8xC591 P8xC591 80C51 SJA1000 8xC591 11-bit 29-bit 64-byte 13-byte SJA1000 application note Philips SJA1000 standalone CAN of the Philips SJA1000 standalone CAN c |