CONDI Search Results

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

TLP55

Contextual Info: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

F585

Contextual Info: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V

Contextual Info: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —

74AC series

Abstract: POM-n
Contextual Info: 9 P R E C A U T IO N S IN D E S IG N IN G C IR C U IT S 9-1 Input Processing 1 Processing of unused gates. Inputs of CMOS IC have such a high im pedance th at the logic level becom es undefined under open conditions. If the input is a t an interm ediate level, the P -channel and N -channel transistors both turn

ieee754

Abstract: TRW LSI Products IEEE-754 ABMT C3202
Contextual Info: Floating-Point Arithmetic T iT w V Fixed-point digital signal processor design requires careful attention to dynam ic range, limit cycles, and overflow conditions. Block floating-point is often used to extend the dynam ic range, but it carries with it significant bookkeeping overhead.

Contextual Info: 4. Solder-mounting Flat Package ICs 1. Soldering conditions a. Soldering iron Solder a t lead tem p eratu re of 2 6 0 t for no m ore than 10 seconds or a t 350°C fo r no m ore th a n 3 seconds. b. Infrared reflow 1 W e recom m end heating m ethods in far-interm ediate infrared shown a t the top and bottom of

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

Contextual Info: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A

5252 F ic

Contextual Info: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

polyester TRW capacitor

Contextual Info: TR Ì TDC4169 Precision +10.000 Volt Voltage Reference The TDC4169 is a voltage reference offering exceptional accuracy and stab ility over a w ide range of tem perature and power supply conditions. The TDC4169 produces a reference voltage of +10.000 Volts generated from a power

CIRCUITS-13

Contextual Info: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.

Contextual Info: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —

Contextual Info: Advance Product Information November 26, 2002 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28

OC74

Contextual Info: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm

Contextual Info: Advance Product Information July 16, 2003 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28 S21 dB

TGA4508-EPU

Contextual Info: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20

Contextual Info: Advance Product Information September 24, 2003 12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 40 mA • Point to Point Radio • Military Ku-Band

Contextual Info: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ

Contextual Info: TLP700H Photocouplers GaAℓAs Infrared LED & Photo IC TLP700H 1. Applications • Transistor Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP700H is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode

Contextual Info: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems

Contextual Info: Product Data Sheet 32 dBm Ku-Band Amplifier TGA2503-SM Key Features • • • • • • • Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA