COMPLEMENTARY MOSFET Search Results

logic level complementary MOSFET

Contextual Info: in te r rii Complementary Pairs 9 Power M O SFE T Products PAGE Complementary Pairs Data Sheets RF1K49092 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET. . 9-3 RF1K49224 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET™ Power MOSFET.

NTHC5513

Contextual Info: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to

Contextual Info: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to

SMD mosfet MARKING code TJ

Abstract: vishay smd diode code marking SMD mosfet MARKING code TC smd transistor marking br smd diode code sd SMD mosfet MARKING code T MOSFET marking smd mosfet pair smd transistor QG SMD BR 17
Contextual Info: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to

NTHC5513

Abstract: NTHC5513T1 NTHC5513T1G A32N
Contextual Info: NTHC5513 Power MOSFET 20 V, +3.9 A / −3.0 A, Complementary ChipFETt Features • • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to

Contextual Info: NTHC5513 Power MOSFET 20 V, +3.9 A / −3.0 A, Complementary ChipFETt Features • • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Complementary MOSFET Half Bridge

Abstract: NDS8852H
Contextual Info: N February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially

MARKING CFK

Abstract: code cfk marking code CFK Complementary MOSFETs P-Channel 1.8V MOSFET TLM832D
Contextual Info: CTLDM7181-M832D SURFACE MOUNT TLMTM N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181M832D is a Dual complementary N-Channel and PChannel Enhancement-mode MOSFET, designed for

marking code CT

Abstract: "MARKING CODE CT" SOT-963
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

MOSFET

Contextual Info: ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

AO4620

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

AO4606A

Contextual Info: AO4606A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4606A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard

AO4616

Abstract: AO4616L A2527 AO46
Contextual Info: AO4616 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4616 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

AO4620

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard

AON3601

Contextual Info: AON3601 Complementary Enhancement Mode Field Effect Transistor General Description Features The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other

Contextual Info: Issue Number | 001 June 2011 New Product Announcement DMC4040SSD Complementary Dual MOSFET reduces motor losses For use in low voltage single and three-phase brushless DC BLDC motor control applications, the DMC4040SSD complementary dual MOSFET from Diodes

AO4620

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

AOD603A

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4625

Abstract: AO4625L
Contextual Info: AO4625 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other