COMMON COLLECTOR AMPLIFIER APPLICATIONS Search Results

MPSH24

Abstract: MMBTH24 MPSH11
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

MPSH34

Abstract: MPSH11
Contextual Info: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET

MMBTH34

Abstract: MPSH11
Contextual Info: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.

MMBTH24

Abstract: MPSH11 MPSH24 V30I
Contextual Info: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications

MPSH24

Abstract: MMBTH24 MPSH11
Contextual Info: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications

ic nn 5198 k

Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Contextual Info: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base

Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.

MPSH11

Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Contextual Info: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

15V 5A Power Supply Schematic

Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
Contextual Info: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.

Contextual Info: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

HN3C03FU

Abstract: tuner uhf Ghz hn3c03
Contextual Info: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)

TH9030

Contextual Info: TH9030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package

NEX230165

Abstract: nex2301
Contextual Info: NEX230165 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI NEX230165 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package

transistor s34

Abstract: MPSH11 MPS-H11
Contextual Info: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to

HN3C03FU

Contextual Info: TO SH IBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)

2SC3611

Contextual Info: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range

850C

Abstract: TPA02 TPA02A TO-38 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A
Contextual Info: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

CBVK741B019

Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MPS-H24

Abstract: MPSH24
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for