COMMON BASE AMPLIFIER CIRCUIT Search Results

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

ic nn 5198 k

Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Contextual Info: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base

MRF1375

Contextual Info: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz

MRF10500

Abstract: motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC
Contextual Info: MOTOROLA Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.

MRF1004MA

Abstract: TACAN TACAN 41 J295
Contextual Info: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MPSH11

Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Contextual Info: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

MRF1035MA

Abstract: MRF1035MB
Contextual Info: MOTOROLA Order this document by MRF1035MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1035MA MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MOTOROLA 381 equivalent

Abstract: transistor j222
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc

Contextual Info: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

MRF898

Abstract: epsilam 10 common base amplifier circuit designing 333a0
Contextual Info: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of

motorola 352 transistor

Abstract: motorola rf Power Transistor Motorola Microwave Transistor motorola 226 376C MRF10070 MRF10350 MRF10500 MOTOROLA POWER TRANSISTOR 14 transistor PD j6
Contextual Info: MOTOROLA Order this document by MRF10070/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10070 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

Contextual Info: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of

motorola 803 transistor

Abstract: transistor 164 motorola motorola 1550 22565 MOTOROLA MRA1600-2 MRA1600
Contextual Info: MOTOROLA Order this document by MRA1600/D SEMICONDUCTOR TECHNICAL DATA MRA1600-2 Designed primarily for large–signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers • Specified 28 Volt, 1640 MHz Characteristics:

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:

motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Contextual Info: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb53T31 □01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.

MRF1150MA

Abstract: mrf1150 mrf1150m
Contextual Info: Order this document by MRF1150MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1150MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

Contextual Info: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

marking a00b

Abstract: MRF1150MA MRF1150MB mrf1150m
Contextual Info: MOTOROLA Order this document by MRF1150MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1150MA MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

TRANSISTOR motorola 838

Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

Contextual Info: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.