CODE TRANSISTOR YA Search Results

BF747

Abstract: MBB400 DB64 transistor HJ 388
Contextual Info: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

spd14n05

Contextual Info: SIEMENS SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> ROS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Q P-T0252

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

Contextual Info: NPN Silicon RF Transistor BF 772 • For low noise, high gain am plifiers up to 2GHz • For linear b roadb and am plifiers • For m o dulato rs and am plifiers in VC R-tuners Type Marking Ordering code for versions on 8 mm-tape Package BF 772 RA Q62702-F1192

Contextual Info: 47E D ÔE35bOS QG2175S 7 «IS IE G SIEMENS SIEMENS AKTIENGESELLSCHAF 7 ^ j 9 - / 3 BUZ 230 SIPMOS Power MOS Transistor Vos la ^D S on = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancement mode • Package: T O -204A A (T O -3 )1) Type Ordering code

Contextual Info: SIEMENS BUZ 312 SIPMOS Power Transistor o • N channel • Enhancement mode V5I05'S6 1 • Avalanche-rated 3 Pin 1 Pin 2 Type Vbs b BUZ 312 1000 V 6 A Pin 3 D G S flbS on Package Ordering Code 1.5 £2 T O -2 18 A A C67078-S3129-A2 Maximum Ratings Parameter

TRANSISTOR CW 7808

Abstract: cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B
Contextual Info: Application Note BLF0810-180; Linear LDMOS amplifier for multi carrier applications in the 869-894 MHz frequency band By Yong Yang, Igor Blednov and Barney Arntz gain and good gain flatness and phase linearity over the band of interest. The device is available

1kl38

Abstract: GD52 diode 8631 G37 IC MCP6031COMP AN1297 ORCAD PSPICE BOOK GD16 MCP6031 transistor k 316M
Contextual Info: AN1297 Microchip’s Op Amp SPICE Macro Models Author: Yang Zhen Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The SPICE macro models for Microchip’s operational amplifiers (op amps) aid in the design and analysis of

PE2512

Abstract: Russian Transistor rl2512xk-07xxxxl PR1206 pt1206xrx07xxxxl YAGEO PF2512 function of ic 7490
Contextual Info: www.yageo.com Low-Ohmic Chip Resistors Low-Ohmic Chip Resistors INTRODUCTION Yageo’s low-ohmic chip resistor ranges are the ideal replacement for traditional wirewound and leaded products in modern power control circuits. Based on the company’s thick film

TRANSISTOR 187

Abstract: ya24 39016/9 187 transistor NFC45255
Contextual Info: Series T Ultraminiature «TO 5 transistor size» non latching relays 28 V / 1 A APPLICATION SPECIFICATIONS NF-C 45255 YA 24 MIL-R-39016/9 -/15 -/20 ESCC 3601-002 CECC 1601-015 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght

Practical statistical simulation for efficient circuit design

Abstract: kopin
Contextual Info: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,

Contextual Info: www.yageo.com Current Sensing Chip Resistors About Yageo Founded in 1977, the Yageo Corporation has become a world-class provider of passive component services with capabilities on a global scale, including production and sales facilities in Asia, Europe and the Americas.

mosfet 4634

Abstract: cloak rfid MCRF355 200B MCRF360 RG41 13.56 MHz RFID tag operation 4892 mosfet
Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags

OMRON CPM1A-30CDR manual

Abstract: MAD11 omron omron CPM1-CIF01 rs 232 manual CPM1-CIF01 CPM1-CIF11 CPM1A-MAD01 CPM1A-30CDR-A CPM1A-40CDR-A OMRON CPM1A-30CDR CPM1A-MAD01 manual
Contextual Info: Contents System Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CPM1A LineĆup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CPM1A System Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LT 2107

Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags

PT958-8C

Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-958-093 PT958-8C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

power supply aps 231

Abstract: 125 kHz RFID parallel antenna center cloak rfid MCRF355 MCRF360 200B DK-2750 RG41 4892 mosfet 4634 regulator
Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

"Photo Interrupter" dual transistor

Abstract: DPT-552-092
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-552-092 PT5529B/L1/H3 ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

PT908-7B

Abstract: PHOTO TRANSISTOR 940nm
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-090-107 PT908-7B ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

J3005

Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Contextual Info: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages

PHOTO TRANSISTOR 940nm

Abstract: PT908-7C PT908-7C/F392
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-092-081 PT908-7C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

CF-121

Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
Contextual Info: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;