CMOS SRAM 35NS 512K X 8 DIP Search Results

Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601  Access Times 15, 17, 20, 25, 35, 45, 55ns  MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range

Contextual Info: WMS512K8-XXX White Electronic Designs 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES  Access Times 15, 17, 20, 25, 35, 45, 55ns  MIL-STD-883 Compliant Devices Available  Revolutionary, Center Power/Ground Pinout JEDEC Approved 36 lead Ceramic SOJ Package 100

smd mark 601 8 pin

Abstract: WMS512K8-XXX SRAM flatpack
Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and Military Temperature Range MIL-STD-883 Compliant Devices Available

WMS512K8-XXX

Contextual Info: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 ■ Access Times 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout

WS512K32-XXX

Contextual Info: WS512K32-XXX / EDI8C32512CA HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ 5 Volt Power Supply ■ Packaging ■ Low Power CMOS ■ Built-in Decoupling Caps and Multiple Ground Pins for Low

Contextual Info: A U ST IN S E M I C O N D U C T O R INC bOE ]> WË ^ 0 0 2 1 1 7 G O O D E T H T5¿S I^ICRON 512K MILITARY SRAM MODULE PIN ASSIGNMENT Top View 32-Pin DIP M S Q FEATURES • High speed: 35ns, 45ns and 55ns • High-density 4 Meg design • High-performance, low-power, CMOS double-metal

Contextual Info: White Electronic Designs WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns TTL Compatible Inputs and Outputs Packaging 5 Volt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP Package 400 .

Contextual Info: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  TTL Compatible Inputs and Outputs  Packaging  5 Volt Power Supply  Low Power CMOS • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  TTL Compatible Inputs and Outputs  Packaging  5 Volt Power Supply  Low Power CMOS • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: WS512K32-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: TT WS512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 PRELIMINARY* FEATURES • A cce ss Tim es of 17, 20, 25, 35, 45, 55ns C om m ercial, Industrial and M i lita r y Te m p e ra tu re Ranges ■ TTL C om p a tib le Inputs and Outputs

SRAM 6T

Abstract: MSM8128 "32K x 8" SRAM dil SRAM 35ns "32K x 8" SRAM PLCC 2035 puma 5 128k x 8 eeprom JLCC
Contextual Info: Part Numbering M S M 8512 SC X L MB - 10 1. 2. 3. 4. 1. 2. Speed 7. 6. 5. TECHNOLOGY 5. PINOUT ARRANGEMENT The memory technology is represented by a single character:- This field identifies the mechanical arrangement of the device pinout:- S D E U blank E

512KX8SRAM

Contextual Info: WMS512K8-XXX WHITE /MICROELECTRONICS 512 Kx8 MONOLITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55nS Commercial, Industrial and Military Temperature Range ■ MIL-STD-883 Compliant Devices Available, S M D # 5962-95613 pending 5 Volt Power Supply

A12U smd

Abstract: A5 .1 u SMD
Contextual Info: a WHITE /MICROELECTRONICS WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 3 2 p in , R e c ta n g u la r C e ra m ic L e a d le s s C hip C a rr ie r P a ck a g e 601 • A c c e s s T i m e s 15, 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

UT8Q512K32

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES  Access Times 20, 25, 35, 45ns  Standard Microcircuit Drawing, 5962-92078  MIL-STD-883 Compliant Devices Available  JEDEC Standard 32 pin, Hermetic Ceramic DIP Package 300  Commercial, Industrial and Military Temperature Range (-55°C to +125°C)

Contextual Info: WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES  Access Times 20, 25, 35, 45ns  Standard Microcircuit Drawing, 5962-92078  MIL-STD-883 Compliant Devices Available  JEDEC Standard 32 pin, Hermetic Ceramic DIP Package 300  Commercial, Industrial and Military Temperature Range (-55°C to +125°C)

Contextual Info: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state