CMOS SRAM Search Results

sram

Abstract: sram datasheet FT6116 cmos sram S-RAM sram 2k x 8
Contextual Info: FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 FT6116 2K X 8 CMOS SRAM FT6116 120 FT6116 150 FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 120 2 FT6116 150(2) FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

KM62256CLP-7

Contextual Info: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family

Contextual Info: ^EDI EDI8F1664C 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module

edi8m1664

Contextual Info: ^EDI EDI8F1664C 64Kx16 SRAM Module ELECTRONIC DESIGNS. INC 64Kx16 Static RAM CMOS, Module IFeatures The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

Contextual Info: ^EDI EDI8F1664C ELECTRONIC DESIGNS IN C Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static 64Kx16 bit CMOS Static Random Access Memory Module

KM68V4000AL-L

Abstract: KM68U4000A lm68
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family

Contextual Info: ^EDI EDI8F1664C ÉLECTRONS DESIGNS INC. Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. 64Kx16 bit CMOS Static Random Access Memory Module

7470 TTL

Abstract: IC 7470 EDI8F1664C70PSC
Contextual Info: ^EDI EDI8F1664C-PSC 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC 64Kx16 Static RAM CMOS, Module IFeatures The EDI8F1664C-PSC is a high speed 64Kx16 CMOS 64Kx16 bit CMOS Static Static RAM Module consisting of four 4 32Kx8 CMOS Random Access Memory Module Static RAMs.

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

Contextual Info: V62C3162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162096L is a Low Power CMOS Static

A2ND

Abstract: KM68U512ALE-L KM68V512A
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process

Contextual Info: ^EDI EDI8F1664C 64Kx16 SRAM Module EIECTRO N C 0CSK5N& N C . 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module

V62C3162048L

Contextual Info: V62C3162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162048L is a Low Power CMOS Static

Contextual Info: V62C1162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162096L is a Low Power CMOS Static

D015

Abstract: 32Kx16bit
Contextual Info: ^E D I EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static 64Kx16 bit CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static Random Access Memory Module

V62C3161024L

Contextual Info: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static

TBA 120T

Abstract: V62C1162048L TBA 120M
Contextual Info: V62C1162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162048L is a Low Power CMOS Static

Contextual Info: V62C2162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162096L is a Low Power CMOS Static