CMOS GATE ARRAYS Search Results

sla6050

Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
Contextual Info: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The

BU16000 Series

Abstract: BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308
Contextual Info: CMOS Gate Array CMOS Gate Array High Speed CMOS Gate Array BU25000 Series The BU25000 series gate arrays have a Sea-of-Gates SOG structure fabricated with a 0.5 micro metre CMOS process. The BU25300 is the base family for 3V systems, and the BU25500 Series is the base sevies for the 5V systems.

BU16503

Abstract: BU16307 BU16515 bu16531
Contextual Info: CMOS Gate Arrays 0.6 /¿m CMOS Gate Array BU16K Family The ROHM BU16K family of CMOS gate array ICs are fabricated using ROHM’s unique 0.6 /¿m submicron process. These gate array are compatible with ROHM’s new ISM model and have reduced noise. Series line-up

F611

Abstract: L302 L611
Contextual Info: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

Contextual Info: Product Brief — Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 |j.m CMOS Si-gate triple-layer metal process technology; 0.75 |^m effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary

ATT65630

Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Contextual Info: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary

pin diagrams of basic gates

Abstract: BGA and QFP Package Nand gate Crystal Oscillator 272000 astro tool HQFP-208 MCM NAND qcm 5 sim 980 CE61
Contextual Info: To Top / Lineup / Index Product Line-up FUJITSU Semicustom Products Semicustom Products Gate arrays Sea-of-Gate CMOS Macro-embedded type cell arrays CMOS Standard cell CMOS Semicustom microcontrollers QCM series* ASTRO NT Bi-CMOS SIM/PLL SERIES Bi-CMOS SAW PLL

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

sla7800

Abstract: TTL 7490 7905 TL 7490 SLA7000 F44-6 SLA7160 SLA7220 SLA7340 SLA7490
Contextual Info: S L A 7 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY •DESCRIPTION The SLA7000 Series consists of a group of 6 CMOS gate arrays with gate counts from 1,632 to 16,250 gates. The series is fabricated utilizing our 1.5 micron high speed CMOS silicon gate technology to achieve

CG46533

Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

F611

Contextual Info: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

transistor Bc 540

Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
Contextual Info: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device

CG46533

Abstract: . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50
Contextual Info: FUJITSU Novem ber 1995 Edition 1.5 DATA SHEET '• CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array

430413

Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
Contextual Info: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and

Contextual Info: NEC NEC Electronics Inc. CMOS-8LH 3.3-V olt, 0.5-M icron CMOS G ate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high perform ance, sub-m icron gate arrays, targeted for

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

Contextual Info: PF108-51 S L A 5 0 0 0 s e r ie s CMOS GATE ARRAY # 3 Micron Dual Layer Metal # 5 Sizes #Fast Design Cycle • DESCRIPTION The SLA5000 series consists of a group of five CMOS gate arrays with gate counts from 413 to 3,082 gates. The series is fabricated utilizing our 3 micron high speed CMOS silicon gate technology to achieve propa­

CG46713

Abstract: CG46194 CG46533 CG46134 CG46104
Contextual Info: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications