CMOS GATE ARRAY Search Results

sla6050

Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
Contextual Info: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The

BU16000 Series

Abstract: BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308
Contextual Info: CMOS Gate Array CMOS Gate Array High Speed CMOS Gate Array BU25000 Series The BU25000 series gate arrays have a Sea-of-Gates SOG structure fabricated with a 0.5 micro metre CMOS process. The BU25300 is the base family for 3V systems, and the BU25500 Series is the base sevies for the 5V systems.

BU16503

Abstract: BU16307 BU16515 bu16531
Contextual Info: CMOS Gate Arrays 0.6 /¿m CMOS Gate Array BU16K Family The ROHM BU16K family of CMOS gate array ICs are fabricated using ROHM’s unique 0.6 /¿m submicron process. These gate array are compatible with ROHM’s new ISM model and have reduced noise. Series line-up

F611

Abstract: L302 L611
Contextual Info: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

4009S

Abstract: LZ95300 lz93 LZ95
Contextual Info: CM O S Gate Array LZ93 Series LZ93 Series • CMOS Gate Array Description ■ The LZ93 series CMOS gate array provides 300 to 5000 gates of line up with high speed and low power consumption. It is fabricated using 1.6 ,«m CMOS silicon gate/ double metal technology.

LZ95300

Abstract: SHARP LZ93 LZ95
Contextual Info: CMOS Gate Array CMOS Gate Array Gate Array Series High Speed Low Power Supply High Speed BiCMOS LZ93 Series LZ95 Series LZ96 Series LZ97 Series ' F.O. = 3 , Al = 2mm 300 to 5000 gates, 1.7ns/gate* 300 to 10000 gates, 1.2ns/gate* 300 to 4000 gates, 9.5ns/gate*

Contextual Info: Product Brief — Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 |j.m CMOS Si-gate triple-layer metal process technology; 0.75 |^m effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary

SHARP LZ93

Abstract: 74ls series gate
Contextual Info: CM OS Gate Array LZ96 Series LZ96 Series • CMOS Gate Array ■ Description 1. CMOS process 2. Number of gates : 300, 650, 1170. 2000, and 4000 3. Internal gate delay 9.5ns/gate 1.5V operating voltage 4. Macro cell : 95cells 74LS cell : 126cells 5. I/O level : CMOS level

74 Series IC Manual

Abstract: V34B LZ95 CMOS IC MANUAL
Contextual Info: SUPPORT SYSTEM FOR GATE ARRAY/CELL-BASED IC • CELL-BASED ICs SF ASIC <CMOS 5A/G/F/A Series> Model No. CMOS 5A CMOS G CMOS F CMOS A Maximum gate count 30 000 14 000 50 000 120 000 Delay time at 5 V Internal gate 0.9 ns 0.9 ns 0.5 ns 0.4 ns Input buffer

ATT65630

Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Contextual Info: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary

pin diagrams of basic gates

Abstract: BGA and QFP Package Nand gate Crystal Oscillator 272000 astro tool HQFP-208 MCM NAND qcm 5 sim 980 CE61
Contextual Info: To Top / Lineup / Index Product Line-up FUJITSU Semicustom Products Semicustom Products Gate arrays Sea-of-Gate CMOS Macro-embedded type cell arrays CMOS Standard cell CMOS Semicustom microcontrollers QCM series* ASTRO NT Bi-CMOS SIM/PLL SERIES Bi-CMOS SAW PLL

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

74LS382

Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
Contextual Info: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a

No Turnaround RAM

Abstract: CX2001 cx2030 QYH500 CHIPX CX2000 CX2002 CX2032 CX2041 CX2081
Contextual Info: CX2000 0.6µ µ/0.5µ µ CMOS Fast-turn Gate Array Product Family Introduction CX2001, 0.6µ CMOS Gate Array Family The CX2001 is a fast-turn, 0.6µ, CMOS, triple metal gate array family. The CX2001 density ranges from 20k to 120k usable gates, plus up to

CG46533

Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

F611

Contextual Info: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low

RS flip flop IC

Abstract: transistor 6bn T flip flop IC 74LS series logic gates 3 input or gate RS flip flop cmos RS FLIP FLOP LAYOUT 1 bit full adder 1 bit full adder with carry 1-Bit full adder 7400 2-input nand gate
Contextual Info: MA Series 2.5 MICRON SILICON-GATE CMOS GATE ARRAYS ./m a t r a -HARRIS SEMICONDUCTOR JULY 1986 2.5/a/1 METAL LAYER HIGH SPEED CMOS GATE ARRAYS UP TO 25 MHz INTERNAL OPERATING FREQUENCY Features Description • HIGH SPEED CMOS : 2 NS/G ATE TYPICAL PROPAGATION DELAY.

SLA6270

Abstract: SLA6140 sla6430 Sla6000 SLA6080
Contextual Info: SbE D S-n 0 S SYSTEMS INC 7 ^ 32 ^ 0*1 00014Ô0 35b • SLA6000 CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates ■ DESCRIPTION

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

transistor Bc 540

Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
Contextual Info: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device