CMOS 5408 Search Results

Contextual Info: MITSUBISHI LS Is M5M5408P,FP,TP,RT-55L,-70L,-10L, -55LL,-70LL,-1 OLL 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408 is 4194304-bit CMOS static RAM organized as 524288-words by 8-bit, fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

NEC 2933

Abstract: CMOS 5408 a1241 nec V830 mcu transistor 13009 V810 V30MX V830 V851 V853
Contextual Info: NEC Electronics Inc. CB-C9VX 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description NEC’s CB-C9VX CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macro functions

Contextual Info: Zero Power CMOS Hard Array Logic ZHAL 24A Series Features/ Benefits Ordering Information • Zero standby power • Low power operation PART NUMBER PACKAGE • High-speed CMOS technology OUTPUTS ARRAY INPUTS COMB REG • HC and HCT compatible ZHAL12L10A

Contextual Info: Zero Pow er CMOS Hard A rray Logic ZHAL 24A Series Features/ Benefits Ordering Information • Zero standby power PART NUMBER • Low power operation PACKAGE • High-speed CMOS technology OUTPUTS ARRAY INPUTS COMB REG • HC and HCT compatible ZHAL12L10A

HL 941

Abstract: rom 512x4 P140 P141 SDIP30 TMP47C454AN CMOS 5408
Contextual Info: TO SH IBA TMP47C454A CMOS 4-BIT MICROCONTROLLER TMP47C454AN The 47C454A is a high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with a DTMF generator and a large-capacity RAM for repertory dialing applications, and which is suitable for

K2547

Abstract: J 6920 A CS81 DS06
Contextual Info: 富士通半導体デバイス DATA SHEET DS06–20206–3 セミカスタム CMOS スタンダードセル CS81 シリーズ • 概 要 0.18 µm CMOS スタンダードセル CS81 シリーズ は , 高速 , 低消費電力 , 高集積度を実現した CMOS ASIC です。

IC Ensemble

Abstract: J 6920 A CE81 DS06 K2586
Contextual Info: 富士通半導体デバイス DATA SHEET DS06–20110–3 セミカスタム CMOS マクロ埋込み型セルアレイ CE81 シリーズ • 概 要 0.18 µm CMOS マクロ埋込み型セルアレイ CE81 シリーズ は , 高速 , 低消費電力 , 高集積度を実現した CMOS ASIC です。

m5m5408FP

Contextual Info: MITSUBISHI LS Is M5M5408FP,TP,RT-55L,-70L,-1 OL, -55LL,-70LL,-1 OLL 4184304-BtT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5 M 540 8 is 4194304-bit CMOS static RAM organized PIN CONFIGURATION (TOP VIEW) as 524288-words by 8-bit, fabricated using high-performance

Contextual Info: TO S H IB A TMP47C454A CMOS 4-BIT M ICROCONTROLLER TMP47C454AN The 47C454A is a high perform ance 4-bit single chip m icrocom puter based on the TLCS-47 CMOS series w ith a DTMF generator and a large-capacity RAM for repertory dialing applications, and w hich is suitable for

PD65881

Abstract: PD65883 240-QFP PD65882 PD65887 PD658 CMOS-N55V CMOS8 PD65884
Contextual Info: 0.5 m CMOSゲートアレイ CMOS-N5ファミリ 動作 実現 速 5V高 ウンを 圧 電 電源 コストダ な 大幅 New s t c u d o r P 特 長 CMOS-N5ファミリは，電源電圧5Vで高速動作が可能なチャネルレス･タイプのゲートアレイです。

RT12L

Abstract: 5408P
Contextual Info: MITSUBISHI LSIs M5M5408P,FP,TP,RT- 55,-70,- 85,-10,- 12, - 55L,-70L,-85L,- 10L,- 12L, - 55LL,- 70LL,- 85LL,- 10LL,- 12LL _ 4194304- BIT S24288- WORD BY 8 - BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 5 4 0 8 is 4 1 9 4 3 0 4 -bit CMOS static RAM organized

Contextual Info: MITSUBISHI LSls M5M5408P,FP,TP,RT-55,-70,-85,-10,-12 -55L, -70L, -85L, -10L, -12L -55LL,-70LL,-85LL,-10LL,-12LL V "• ¿o«. 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408P.FP,TP,RT are 4,194,304-bit CMOS static RAMs organized as 524,288-words by 8-bit which are fabricated using

upd5200c

Abstract: uPD5200G uPD5200 PD5200 PD5200G C10535J PC813
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD5200 デュアル SPST CMOS アナログ・スイッチ µ PD5200 は，高耐圧 CMOS プロセスによる汎用高速アナログ・スイッチで，SPST（単極単投）のスイッチが

uPD5201G

Abstract: uPD5201 upd5201c PD5201 IC-6298 5201G *d5201g PD5201G s46d PD5201C
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD5201 クワッド SPST CMOS アナログ・スイッチ µ PD5201 は，高耐圧 CMOS プロセスによる汎用高速アナログ・スイッチで，SPST（単極単投）のスイッチが

J 6920 A

Abstract: IC Ensemble CE61 CE66 DS06 k321 K136 il-z clip
Contextual Info: 富士通半導体デバイス DATA SHEET DS06–20109–3 セミカスタム CMOS マクロ埋込み型セルアレイ CE66 シリーズ • 概 要 0.35 µm CMOS マクロ埋込み型セルアレイ「CE66 シリーズ」は , 従来の「CE61 シリーズ」に対し , 高集積化 , 低消費電力化

transistor c103m

Abstract: C103M c105m W41l c105m TRANSISTOR c103m TRANSISTOR C103M equivalent 54175 4013 bt CMOS Sc 54155
Contextual Info: TGC100M MILITARY SERIES 1/im CMOS GATE ARRAYS Release 2.0, APRIL 1989 Fully Characterized for Military Applications — Product Fully Compliant with the Requirements of M IL-STD-883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance with the General Requirements of

NZ70008H

Abstract: STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398
Contextual Info: DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1: System-Level-Integration The CB-C9VX/VM family offers ultra-high performance, deep submicron cell-based ASICs for high-end applications requiring high speeds, high integration density and low power

CMOS 5408

Abstract: HC640A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC640A Advance Inform ation J SUFFIX CERAMIC CASE 732-03 Octal 3-S tate Inverting Bus Transceiver High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC CASE 738-03 The M C 54/74HC640A is identical in pinout to the LS640. The device inputs

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

1741 OPamp

Abstract: t152 act dsp1653 mip 0244 lucent 451
Contextual Info: Preliminary Data Sheet January 1998 FlashDSP 1650 Digital Signal Processor 1 Features • For 5 V operation: — 25 ns instruction cycle time 40 MIPS ■ For 3.3 V operation: — 30 ns instruction cycle time (33 MIPS) ■ Power-saving features: — Low-power 0.6 µm CMOS technology; fully

CXD2310A

Abstract: CXD2310AR HA5020 HI5710A HI5710AJCQ
Contextual Info: HI5710A, CXD2310A S E M I C O N D U C T O R 10-Bit, 20 MSPS A/D Converter January 1997 Features Description • Resolution 10-Bit ±0.5 LSB DNL The HI5710A, CXD2310A is a low power, 10-bit, CMOS analog-to-digital converter. The use of a 2-step architecture

aeg diode Si 11 K

Abstract: aeg diode Si 11 aeg Diode D6 aeg diode Si 11 n
Contextual Info: ADV MICRO P LA / P L E / A R R AY S It D E | 02S75EL. OOSTMST Û T-46-13-47 Zero Power CMOS Hard Array Logic ZHAL 24A Series Features/Benefits Ordering information • Zero standby power PART NUM BER • Low power operation PACKAGE • High-speed C M O S technology

Contextual Info: MITSUBISHI LSIs M5M5408P,FP,TP,RT- 55,- 70,- 85,- 10,- 12, - 55L, - 70L, - 85L, - 10L, - 12L, - 55LL, - 70LL, - 85LL, - 10LL, - 12LL ^ 4194304-BIT 524288-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 5 4 0 8 is 4 1 9 4 3 0 4 -b it CMOS static RAM organized

4096 RAM

Abstract: P140 P141 SDIP30 TMP47C454AN
Contextual Info: TO S H IB A TMP47C454A CMOS 4-BIT M ICRO CO N TRO LLER TM P47C454AN The 47C454A is a high perform ance 4-bit single chip m icrocom puter based on the TLCS-47 C M O S series w ith a DTMF generator and a large-capacity RA M for repertory dialing applications, and which is suitable for