CMOS 4000 SPECIFICATIONS Search Results

PE4245

Abstract: PE4245-EK
Contextual Info: Product Specification PE4245 SPDT UltraCMOS RF Switch DC - 4000 MHz Product Description The PE4245 RF Switch is designed to cover a broad range of applications from near DC to 4000 MHz. This switch integrates on-board CMOS control logic with a low voltage CMOS

PE4245

Abstract: PE4245-EK PE4245G-06DFN
Contextual Info: Product Specification PE4245 SPDT UltraCMOS RF Switch DC - 4000 MHz Product Description The PE4245 RF Switch is designed to cover a broad range of applications from near DC to 4000 MHz. This switch integrates on-board CMOS control logic with a low voltage CMOS

KM41C4000/L

Abstract: KM41C4000
Contextual Info: SAMSUNG ELECTRONICS INC M 2E D 7^4142 QQ1D1S7 b ISM6K CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tflC K M 41C 4000/L- 8 80ns 20ns 150ns K M 41C 4000/L-10 100ns 25ns

4000 SERIES CMOS

Abstract: P1144
Contextual Info: LOW-POWER CMOS CLOCK OSCILLATORS P 1100-SC SERIES 4000 Series CMOS Output. Suitable for High Voltage and Low Current Applications. Hermetically Sealed in Metal Package. STANDARD SPECIFICATIONS: DIMENSIONS P1100-SC #7 p (^ # 1 .500' (12.70) _.600"_ (15.24)

Contextual Info: Product Specification PE4237 SPDT UltraCMOS RF Switch DC - 4000 MHz Product Description The PE4237 RF Switch is designed to cover a broad range of applications from near DC to 4000 MHz. This reflective switch integrates on-board CMOS control logic driven by a single-pin,

PE4237G

Abstract: PE4237 PE4237-EK PE4237G-06DFN
Contextual Info: Product Specification PE4237 SPDT UltraCMOS RF Switch DC - 4000 MHz Product Description The PE4237 RF Switch is designed to cover a broad range of applications from near DC to 4000 MHz. This reflective switch integrates on-board CMOS control logic driven by a single-pin,

44C4000

Abstract: KM44C4000
Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: MP7684A CMOS 8-Bit High Speed Analog-to-Digital Converter M Micro Power Systems FEATURES • Low Power CMOS 300 mW • Sampling Rates from 0.001 to 20 MHz (MSPS) • ESD Protection: 4000 Volts Minimum • 1/4 LSB DNL from 0.001 to 10 MHz • Latch-Up Free

Contextual Info: MP7684A CMOS 8-Bit High Speed Analog-to-Digital Converter • Low Power CMOS 300 mW • ESD Protection: 4000 Volts Minimum • Latch-Up Free FEATURES • • • • • • • Sampling Rates from 0.001 to 20 MHz (MSPS) 1/4 LSB DNL from 0.001 to 10 MHz

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • 7 ^ b m 4 2 DOlblSl flôfi KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its

Contextual Info: MP7684A CMOS 8-Bit High Speed Analog-to-Digital Converter FEATURES • Low Power CMOS 300 mW • Sampling Rates from 0.001 to 20 MHz (MSPS) • ESD Protection: 4000 Volts Minimum • 1/4 LSB DNL from 0.001 to 10 MHz • Latch-Up Free • 1/2 LSB DNL to 14 MHz

Contextual Info: MP7684A CMOS 8-Bit High Speed Analog-to-Digital Converter M Micro Power Systems FEATURES • • • • • • • • • Low Power CMOS 300 mW • ESD Protection: 4000 Volts Minimum • Latch-Up Free Sampling Rates from 0.001 to 20 MHz (MSPS) 1/4 LSB DNL from 0.001 to 10 MHz

Contextual Info: MICRO POWER SYSTEMS INC LIE D • bGT74M4 0G04b32 b47 ■ MPS MP7686 m CMOS 6-Bit High Speed Analog-to-Digital Converter Micro Power Systems • ESD Protection: 4000 Volts Minimum • Latch-Up Free • CDIP, PDIP & SOIC Packages Available FEATURES • •

Contextual Info: MICRO POW ER S Y S T E M S INC blE D • bO'mMM G D D H b l P AST * M P S -T-si-iGHzra MP7684A CMOS 8-Bit High Speed Analog-to-Digital Converter M Micro Power Systems • Low Power CMOS 300 mW FEATURES • ESD Protection: 4000 Volts Minimum • Sampling Rates from 0.001 to 20 MHz (MSPS)

72678

Abstract: TN0200K-T1-E3 TN0200K TN0200K-T1 TN0200KT 40243
Contextual Info: TN0200K Vishay Siliconix New Product N-Channel 20-V D-S MOSFETs FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.73 0.5 @ VGS = 2.5 V 0.65 APPLICATIONS D D D D D Direct Logic-Level Interface: TTL/CMOS

isfh6720

Contextual Info: SFH6720T, SFH6721T Vishay Semiconductors High Speed Optocoupler, Dual, 5 MBd, in SOIC-8 Package FEATURES 8 VCC 1 A 2 7 VO • Data rate 5 temperature C 3 6 NC • Buffer 5 GND • Isolation test voltage, 4000 VRMS 4 MBits/s 2.5 MBit/s over • TTL, LSTTL and CMOS compatible

SFH6721T

Abstract: SFH6732 SFH6720T SFH6731
Contextual Info: SFH6720T, SFH6721T Vishay Semiconductors High Speed Optocoupler, Dual, 5 MBd, in SOIC-8 Package FEATURES 8 VCC 1 A 2 7 VO • Data rate 5 temperature C 3 6 NC • Buffer 5 GND • Isolation test voltage, 4000 VRMS 4 MBits/s 2.5 MBit/s over • TTL, LSTTL and CMOS compatible

TN0200K-T1-E3

Abstract: TN0200K
Contextual Info: New Product TN0200K Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 20 • TrenchFET Power MOSFET • ESD Protected: 4000 V RoHS COMPLIANT APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS

Contextual Info: SFH6720T, SFH6721T Vishay Semiconductors High Speed Optocoupler, Dual, 5 MBd, in SOIC-8 Package FEATURES 8 VCC 1 A 2 7 VO • Data rate 5 temperature C 3 6 NC • Buffer 5 GND • Isolation test voltage, 4000 VRMS 4 MBits/s 2.5 MBit/s over • TTL, LSTTL and CMOS compatible

Contextual Info: New Product TN0200K Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 20 • TrenchFET Power MOSFET • ESD Protected: 4000 V RoHS COMPLIANT APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS

Contextual Info: SFH6720T, SFH6721T Vishay Semiconductors High Speed Optocoupler, Dual, 5 MBd, in SOIC-8 Package FEATURES 8 VCC 1 A 2 7 VO • Data rate 5 temperature C 3 6 NC • Buffer 5 GND • Isolation test voltage, 4000 VRMS 4 MBits/s 2.5 MBit/s over • TTL, LSTTL and CMOS compatible

TN0200K

Abstract: TN0200K-T1-E3 S-71198
Contextual Info: New Product TN0200K Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 20 • TrenchFET Power MOSFET • ESD Protected: 4000 V RoHS COMPLIANT APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS

Contextual Info: ICL3237 TM Data Sheet March 2001 1 Microamp Supply-Current, +3V to +5.5V, 1Mbps, RS-232 Transmitters/Receivers The Intersil ICL3237 contains 3.0V to 5.5V powered RS-232 transmitters/receivers which meet ElA/TIA-232 and V.28/V.24 specifications, even at VCC = 3.0V. Targeted