CM800HB50H Search Results

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

nf 0036 diode

Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS

FT500BH

Abstract: transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S
Contextual Info: 三菱 大電力半導体／スタック編 三菱半導体〈大電力半導体〉 品種一覧表 形 名 •一般用整流ダイオード SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H H°'Spa'# # c so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE

PS51259-AP

Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Contextual Info: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,

CM800HB-50H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM800HB-50H 大電力スイッチング用 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 絶縁形 CM800HB-50H ¡IC ……………………………………………… 800A

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAW ING & CIRCUIT DIAGRAM

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

CM400DY-66H

Abstract: 4500v CM900HB-90H diode 900A CM1200HA-34H 2500V. 300A. diodes CM12 cm400du CM800HA-34H cm800hb
Contextual Info: Px IGBTs Recommended for new designs 1700V - 6500V 7/3/2003 NF-Series, F-Series, KA-Series Circuit 50A 75A Chopper, Six PAC Dual Buck, Boost 100A 150A 200A 300A 400A 600A CM400HA-34H Dual Dual Single 900A 1200A Ic A CM1200HA-34H Recommended CM100DU-34KA CM150DU-34KA CM200DU-34KA CM300DU-34KA CM400DU-34KA CM600DY-34H

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE

power IGBT MOSFET transistor GTO SCR di

Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Contextual Info: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power