CM120 Search Results

CM1200HCB-34N

Abstract: TRANSISTOR JC 515 transistor 2955
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V

Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

Contextual Info: CM1200E4C-34N Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts A D U D K (4 TYP) 4 F 2 B C V E 3 1 C E G M (3 TYP) W G H L (6 PLACES) J N T 4(C) 2(A) 3(E) 1(K) C

150004

Contextual Info: CM1200DB-34N Dual IGBTMOD HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 1200 Amperes/1700 Volts A D D U K (4 TYP) 4 2 Q F B C E 3 Y 1 Z E1 E2 AA G1 M (3 TYP) G2 V W C1 C2 L (6 PLACES) J H G AB

Contextual Info: CM1203 1, 2 and 3-Channel ESD Arrays in CSP Features Product Description • The CM1203 comprises a family of 1, 2, and 3-channel ESD protection arrays, which integrate two, three and four identical avalanche-style diodes. It is intended that one of these diodes is connected to GND and the other

CM1200DC-34N

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N ● IC . 1200A ● VCES . 1700V

CM1205

Abstract: PACDN1404C PACDN1408C PACDN1416C L05 MARKING c120516
Contextual Info: CM1205 ESD Protection Arrays, Chip Scale Package Features Product Description • The CM1205 family of transient voltage suppressor arrays provides a very high level of protection for sensitive electronic components that may be subjected to ESD. • • •

CM1200HA-24J

Contextual Info: CM1200HA-24J Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules

CM1200HA-66H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1200HA-66H 大電力スイッチング用 絶縁形 HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HA-66H ¡IC …………………………………………… 1200A ¡VCES ……………………………………… 3300V

925 pin-compatible

Abstract: CM1203 CM1203-01CP CM1203-01CS CM1203-02CS CM1203-03CS
Contextual Info: CM1203 1, 2 and 3-Channel ESD Arrays in CSP Features Product Description • The CM1203 comprises a family of 1, 2, and 3-channel ESD protection arrays, which integrate two, three and four identical avalanche-style diodes. It is intended that one of these diodes is connected to GND and the other

Switching

Abstract: "Bipolar Transistor" CM1200HC-66H
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

Contextual Info: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A

tip 416 transistor

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H *w '£e'pa,an' '1'0 soW HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

CM1200HB-66H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

CM1200HA-34H

Abstract: circuit diagram induction heating
Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

CM1200HA-34H

Abstract: transistor su 312
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

CM1200DC-34N

Abstract: 177 350-02 1200V, 130005 power transistor
Contextual Info: CM1200DC-34N Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts E (6 PLACES) A D D R Q (6 PLACES) 2 4 F B C G S 1 3 T E2 E1 U G2 G1 C1 V C2 J W K L M N H (6 PLACES) P

CM1200HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

mitsubishi inverter air conditioning

Abstract: CM1200HC-34H
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-34H ● IC . 1200A ● VCES . 1700V

CM1200HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-50H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

CM1200HB-66H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE

CM1200HC-66H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V