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    CLY 10 Search Results

    CLY 10 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CLY10
    		Infineon Technologies GaAs FET Original PDF 146.22KB 8
    CLY10
    		Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF 465.63KB 37
    CLY10
    		Siemens GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) Original PDF 76.06KB 7
    CLY 10
    		TriQuint Semiconductor RF Amplifier, General purpose amplifier, Single channel, Chip, 6000 MHz, SOT-223, 4-Pin Original PDF 92.35KB 7
    CLY10
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 79.75KB 1
    CLY10
    		Siemens Transistors Scan PDF 79.47KB 1
    SF Impression Pixel

    CLY 10 Price and Stock

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    Avalanche Technology AS3064204-0108X0MCLY

    SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AS3064204-0108X0MCLY
    • 1 $775.05
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    Avalanche Technology AS3128208-0108X0MCLY

    SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AS3128208-0108X0MCLY
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    LEMO connectors FGG.3B.310.CLYD10Z

    Circular Push Pull Connectors LEMO Circular Plug, 10 LV Contacts, with Custom termination
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FGG.3B.310.CLYD10Z
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    • 100 $97.39
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    CLY 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		q62702-l96siemens gaas fettms 1600marking s221 PDF

    Q62702-L96

    Contextual Info: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,


    Original     		q62702-l96 PDF

    CLY10

    Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
    Contextual Info: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		q62702-l94cly10gaas fet marking acly 10+60491707096fet marking codemarking code 5small signal gaas fetsiemens gaas fet PDF

    Q62702-L94

    Contextual Info: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		q62702-l94 PDF

    gaas fet marking a

    Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
    Contextual Info: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm


    Original     		q62702-l96gaas fet marking acly 2 gaas fetmarking code 5+2siemens mag 6000siemens gaas fet PDF

    siemens 30 090

    Abstract: Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606
    Contextual Info: CLY 15 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm


    Original     		q62702-l99siemens 30 090siemens a 1458gaas fet marking a+2440 485hl 1606 PDF

    gaas fet marking a

    Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
    Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm


    Original     		q62702-l90615msgaas fet marking asiemens gaas fet+4fet marking codecly5cly 10pd21 PDF

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l94ot-223p-sot223-4-2gps05560+3cly 10cly 70smd marking code transistor 501 PDF

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		ot-223q62702-l94p-sot223-4-2gps05560+5wl431003667transistor smd marking code 703transistor smd marking code 723smd transistor marking p1transistor smd marking code 512 PDF

    TRANSISTOR SMD MARKING CODE 703

    Abstract: TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501
    Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l94ot-223p-sot223-4-2gps05560+5transistor smd marking code 703transistor smd marking code 723smd transistor marking 329booksmd marking code transistor 501 PDF

    Q62702-L90

    Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
    Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l90marking k gaas fetgaas fet marking agaas fet marking c PDF

    transistor smd code marking 561

    Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
    Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		ot-223q62702-l99p-sot223-4-2eht08941+4gps05560transistor smd code marking 561sot-223 marking code 718smd marking 271 sot PDF

    transistor smd code marking 561

    Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
    Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l99ot-223p-sot223-4-2eht08941+3gps05560transistor smd code marking 561s-parameter s11 s12 s21 PDF

    Q62702-L96

    Contextual Info: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l96gpw05794 PDF

    RN-134 RN-134

    Contextual Info: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		q62702-l96gpw05794rn-134 rn-134 PDF

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		ot-223q62702-l90p-sot223-4-2eht08956+7gps05560transistor smd 661 752high power fet transistor s-parameterstransistor smd marking code p1smd transistor code 621marking code 933 smd transistorsmd transistor marking p PDF

    transistor smd 661 752

    Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
    Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		ot-223q62702-l90p-sot223-4-2eht08956+8gps05560transistor smd 661 752cly 30marking code 933 smd transistortransistor smd marking code p1cly 5809 code marking sot-223marking code s21 smd transistor PDF

    transistor smd code marking 561

    Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
    Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		ot-223q62702-l99p-sot223-4-2eht08941+6gps05560transistor smd code marking 561smd marking 271 sotgaas fet amplifier 3400 mhztransistor smd marking code 352smd transistor 718 PDF

    t z 1037 519

    Contextual Info: Infineon !«£hnc!03iä& GaAs FET CLY 15 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Operating voltage range: 2.7 to 6 V • • ^ out Vq = 3 V, / = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		q62702-l99p-sot223-4-2cly15t z 1037 519 PDF

    marking code 933 SMD Transistor

    Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
    Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		ot-223q62702-l90p-sot223-4-2eht08956+5gps05560marking code 933 smd transistortransistor smd 661 752cly5high power fet transistor s-parameters PDF

    Contextual Info: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		q62702-l96eht08944 PDF

    Contextual Info: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,


    OCR Scan     		q62702-l90p-sot223-4-2eht08952 PDF

    siemens gaas fet

    Abstract: gaas fet marking J
    Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		s0s163q62702-l90615msi77ms-+3417pssiemens gaas fetgaas fet marking j PDF

    Q68000-A8370

    Abstract: CGY MW
    Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


    Original     		1900cq62702-l0132q62702-l0131q62702-f1215+7q62702-f1391q62705-k0603q62705-k0604q62702-g0116q62703-f97q68000-a8370cgy mw PDF