CLR032 Search Results

Contextual Info: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current

PLL IC 566

Abstract: application of IC 566 function generator ne 565 pll Resistor Fuse 4.91 pll 565 application PLL 567 am2971
Contextual Info: Am2971 Programmable Event Generator PEG Am2971 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Twelve programmable, registered output waveforms Programmable event intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im­ proved timing accuracy

dk qs

Abstract: CLTO20
Contextual Info: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,

27S181

Abstract: Am27S181/27S181
Contextual Info: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

28F020A

Abstract: 28F020T
Contextual Info: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current

AMD 28F512

Contextual Info: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current

TS21C

Abstract: am2971
Contextual Info: Am 2971 Programmable Event Generator PEG PRELIM INARY Distinctive Characteristics • • • • Twelve programmable, registered output waveforms Programmable event Intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im­ proved timing accuracy

am2664be

Abstract: rvb ah
Contextual Info: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write

Amd 5000 pin diagram

Contextual Info: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention

VM7204

Abstract: AM7204A PDW028
Contextual Info: a Am7204A Advanced Micro Devices High Density First-In First-Out FIFO 4096 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ ■ RAM based FIFO 4096 x 9 organization Cycle times of 25/35/45/65 ns for standard products Cycle times of 40/65 ns for APL products

AM27S35

Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Contextual Info: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard

Contextual Info: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power

2817a

Abstract: MIL-STD-663
Contextual Info: Am2817 A 2048 x 8-B it E lectrically Erasable PROM • • 5-Volt-only operation Write-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication Self-timed write cycle with on-chip latches Minimum endurance of 10,000 write cycles per byte with

27S45

Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
Contextual Info: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay

27s31

Contextual Info: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide

Contextual Info: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.

AM27S45A

Abstract: AM27S45s
Contextual Info: Am27S45/Am27S47 Am27S45/Am27S47 16,384-Bit 2 0 4 8 x 8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies

27S43A

Abstract: CD 024 27S43 KS000010
Contextual Info: Am27S43/27S43A Advanced Micro Devices 32,768-Bit 4096x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time Voltage and temperature compensated providing ex­ tremely flat AC performance over military range Platinum-Silicide fuses guarantee high reliability, fast

AM99C328-70

Contextual Info: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum

AM27S45

Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
Contextual Info: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay

Contextual Info: -» A /* i. « Advanced Micro High Density First-In First-Out FIFO 4096x9-Bit CMOS Memory Devices a Am7204A DISTINCTIVE CHARACTERISTICS • ■ RAM based FIFO 4096x9 organization Low power consumption Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for

Contextual Info: Advanced Micro Devices Am7203A High Density First-in First-Out FIFO 2048x9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO ■ Low power consumption ■ 2048x9 organization ■ Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for