CLASS-G POWER SUPPLY Search Results

TOKO 1239AS

Contextual Info: YZG TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com 2.2 W Constant Output Power Class-D Audio Amplifier with Class-G Boost Converter Check for Samples: TPA2080D1 FEATURES DESCRIPTION • The TPA2080D1 is a high efficiency Class-D audio power amplifier with an integrated Class-G boost

I960

Abstract: general electric
Contextual Info: BEAM PENTODE FOR RF CLASS C APPLICATIONS — - DESCRIPTION A N D RATING The 7701 is a miniature beam-power pentode suitable for Class C radio­ frequency power-amplifier and frequency-multiplier service. B A SIN G D IA G R A M GENERAL ELECTRICAL Cathode— Coated Unipotential

6y7g

Abstract: sb1-d TWIN TRIODE 7000 triode
Contextual Info: 6Y7 G TUNG-SOL TWIN TRIODE POWER AMPLIFIER UNI POTENTI AL CATHODE HEATER 6.3 VOLTS 0.6 AMPERE AC OR DC G-8B G LASS BULB SMALL 8 PIN OCTAL BASE THE TUNG-SOL 6Y7G IS A TWIN TRIODE DESIGNED PRIMARILY FOR SERVICE AS A CLASS B POWER AMPLIFIER, VOLTAGE AMPLIFIER OR PHASE

Contextual Info: G C E IM O R P IM O R U A T IV I High Power Class B Output Stage I O M 551 LC551 DATA SHEET FEATURES DESCRIPTION • adjustable gain to 48 dB The LC551 is a 10 pin low voltage, class B artlplitier w hich • capable of driving low impedance receiver 110 Q

Contextual Info: r = 7 S G S -T H O M S O N * 7 / . « G ä m iC T M ltS I T D A 7480 10W MONO CLASS-D AMPLIFIER • 10W OUTPUT POWER: Rl = 8£2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ NO HEATSINK ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION

"Class G Amplifier"

Contextual Info: TLV320DAC3202 www.ti.com SLAS726B – SEPTEMBER 2010 – REVISED MARCH 2012 LOW POWER HIGH FIDELITY I2S INPUT HEADSET IC Check for Samples: TLV320DAC3202 FEATURES 1 • Ground Referenced Click-Pop Free Class-G Stereo Headset Driver Capable of Driving 1 VRMS at the Headset

Contextual Info: S G S -T H O M S O N 5 7 . \MQfgœniLtiCTffiti 0 1 T DA7482 25W MONO CLASS-D AMPLIFIER PRODUCT PREVIEW • 25W OUTPUT POWER: RL = 8i2; THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BYAND MUTE FEATURES

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

Contextual Info: FEATURES PA09A • • • • • • • POWER MOS TECHN O LO G Y - 2A Peak Rating HIG H GAIN BANDW IDTH PRO DUCT - 150MHz VERY FAST SLEW RATE - 400V/jus PROTECTED O UTPUT STAGE - Thermal Shutoff EXCELLENT LINEARITY - Class A/B Output W IDE SUPPLY RANGE - ±12V to ±40V

8c1 transistor

Contextual Info: [KgMtllLiCTffitiìOOgi TDA7480 S G S -T H O M S O N 5 7 \M . 1OW MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 10W OUTPUT POWER: RL = 8i2; THD = 10% ■ HIGH EFFICIENCY . NO HEATSINK ■ SPLIT SUPPLY . OVERVOLTAGE PROTECTION ■ ST-BYAND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION

Contextual Info: / = 7 SGS-THOMSON TDA2008 [ * [ Ì 3 i L i g r a i O ( g § 12W AUDIO AMPLIFIER (VS=22V, R L=4Q) The T D A 2 0 0 8 is a m o n o lith ic class B audio power a m p lifie r in Pentaw att package designed fo r driving lo w impedance loads (down to 3 .2 H ).

PA13

Abstract: PA13A INDUCTOR 500MH 50V
Contextual Info: POWER OPERATIONAL AMPLIFIER PA13 • PA13A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • LOW THERMAL RESISTANCE — 1.1° C/W CURRENT FOLDOVER PROTECTION EXCELLENT LINEARITY — Class A/B Output

cr0603 VENKEL

Abstract: C0603X5R6R3
Contextual Info: AN726 U TILITY C LASS - D TOOL S T I C K U SER ’ S G UIDE 1. Introduction Class-D is a switching power amplifier architecture that uses high-frequency Pulse-Width Modulation PWM to generate the output waveform. The transistors are fully on or fully off, which means this architecture can reach very

vw 9a engines

Abstract: PA10 PA10A
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA10 • PA10A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • GAIN BANDWIDTH PRODUCT — 4MHz TEMPERATURE RANGE — –55 to +125° C (PA10A) EXCELLENT LINEARITY — Class A/B Output

PA10

Abstract: PA10A
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA10 • PA10A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • GAIN BANDWIDTH PRODUCT — 4MHz TEMPERATURE RANGE — –55 to +125° C (PA10A) EXCELLENT LINEARITY — Class A/B Output

capacitor .1m 100v

Abstract: PA07 PA07A 12v audio amplifier 60W
Contextual Info: FET INPUT POWER OPERATIONAL AMPLIFIERS PA07 • PA07A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • LOW BIAS CURRENT — FET Input PROTECTED OUTPUT STAGE — Thermal Shutoff EXCELLENT LINEARITY — Class A/B Output

cr 4180 r4

Abstract: Nippon capacitors
Contextual Info: M O TO R O LA Order this document by MRFIC0913/D SEM ICO N DUCTO R TECHNICAL DATA The M RFIC Line M R F IC 0 9 13 900 M H z G a A s Integrated Pow er Am plifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48% minimum power added efficiency

2SC3542

Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP

MJ3026

Abstract: TIC 136 Transistor MJ3027
Contextual Info: M J 3 0 2 6 s ilic o n M J302 7 2 AMPERES POWER TRANSISTORS NPN SILICON VERTICAL OUTPUT HIGH-VOLTAGE NPN SILICON TRANSISTORS 500, 700 V O LTS . . . designed for use in class A vertical deflection in television receivers, where linear h p g is desired to 2 5 0 m A . Intended fo r use w ith high

tda1518bq

Abstract: tda1518 TDA1516BQ car power amp circuit diagrams TDA1S18BQ
Contextual Info: TDA1518BQ Æ _ 24 W BTL OR 2 X 12 WATT STEREO CAR RADIO POWER AMPLIFIER G E N E R A L D ESC R IPTIO N .an inte9rf e d class-B o u tp u t a m p lifie r in a 13-lead single-in-line SI L plastic pow er Package. The device is primarily developed for car radio applications.

Contextual Info: LM 49101 LM49101 Mono Class AB Audio Subsystem with a True Ground Headphone Amplifierand Earpiece Switch Te x a s In s t r u m e n t s Literature Number: SNAS475 t LM49101 a l Semiconductor March 23, 2009 B O O m r Audio Power Amplifier Series M ono C lass A B A u d io S ub syste m w ith a T rue G round

tba8105

Abstract: A8105
Contextual Info: TBA810S/TBA810AS TBA810DS/TBA810DAS 7 WATT AUDIO POWER AMPLIFIERS FAIRCHILD LIN EAR IN T E G R A T E D C IR C U I T S G E N E R A L D E S C R I P T I O N — T h e T B A 8 1 0 S is a m o n o lith ic integrated circuit in a 12-lead plastic pow er package intended fo r use as a low frequency class B pow er am plifier. It is con stru cted using the

tda2002 bridge

Abstract: TDA2002 application note UA2002 3000 watt audio circuit diagram TOA2002 TDA2002 TDA2002 amplifier TDA2002 amplifier circuit UA2002A TDA2002V
Contextual Info: TDA2002 • TDA2002A 8 W A T T A U D I O POWER A MPLIFIERS F A IR C H IL D L IN EA R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N - T h e T D A 2 0 0 2 and T D A 2 0 0 2 A are m o n o lith ic in te g ra te d c irc u its designed fo r class B a u d io p o w e r a m p lifie r a p p lic a tio n s using lo w im p e d a n c e loads

w04c

Abstract: 1117 ADC amplifier circuit diagram 20000 watt machlett
Contextual Info: DESCRIPTION T h e M L -8 9 3 A -R is a three-electrode tube designed spccilically for use as a m odulator, amplifier, or oscillator in radio trans­ m itting service. Tlic cathode is a pure-tungsten filament and can be operated from single, three, or six-phase pow er supply;